{"id":"https://openalex.org/W2160666916","doi":"https://doi.org/10.1109/soi.2009.5318754","title":"45 GHz silicon MESFETs on a 0.15 \u00b5m SOI CMOS process","display_name":"45 GHz silicon MESFETs on a 0.15 \u00b5m SOI CMOS process","publication_year":2009,"publication_date":"2009-10-01","ids":{"openalex":"https://openalex.org/W2160666916","doi":"https://doi.org/10.1109/soi.2009.5318754","mag":"2160666916"},"language":"en","primary_location":{"id":"doi:10.1109/soi.2009.5318754","doi":"https://doi.org/10.1109/soi.2009.5318754","is_oa":false,"landing_page_url":"https://doi.org/10.1109/soi.2009.5318754","pdf_url":null,"source":{"id":"https://openalex.org/S4210190736","display_name":"IEEE International SOI Conference (SOI)","issn_l":"1078-621X","issn":["1078-621X","2577-2295"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International SOI Conference","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077717119","display_name":"William Lepkowski","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Lepkowski","raw_affiliation_strings":["Arizona State University, Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003828510","display_name":"Seth J. Wilk","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.J. Wilk","raw_affiliation_strings":["Arizona State University, Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006951352","display_name":"TREVOR J. THORNTON","orcid":"https://orcid.org/0000-0003-1220-5399","observed_orcids":["https://orcid.org/0000-0003-1220-5399"]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T.J. Thornton","raw_affiliation_strings":["Arizona State University, Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Arizona State University, Tempe, AZ, USA","institution_ids":["https://openalex.org/I55732556"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I55732556"],"apc_list":null,"apc_paid":null,"fwci":0.4718,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.6217797,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8574000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8574000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.12489999830722809,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.009399999864399433,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/soi-cmos","display_name":"SOI CMOS","score":0.8169999718666077},{"id":"https://openalex.org/keywords/45-ghz","display_name":"45 GHz","score":0.6510000228881836},{"id":"https://openalex.org/keywords/high-frequency-transistors","display_name":"high-frequency transistors","score":0.8500000238418579},{"id":"https://openalex.org/keywords/depletion-mode-operation","display_name":"depletion mode operation","score":0.6010000109672546},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.6790000200271606},{"id":"https://openalex.org/keywords/threshold-voltage-tuning","display_name":"threshold voltage control","score":0.875},{"id":"https://openalex.org/keywords/gate-length-scaling","display_name":"gate length scaling","score":0.7360000014305115},{"id":"https://openalex.org/keywords/high-speed-integrated-circuits","display_name":"high-speed integrated circuits","score":0.382999986410141}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8807337284088135},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.727415919303894},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6944218873977661},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.49241530895233154},{"id":"https://openalex.org/C172905872","wikidata":"https://www.wikidata.org/wiki/Q1622339","display_name":"Silicon on sapphire","level":4,"score":0.4630439877510071},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4142794609069824},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3933188319206238},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3888840675354004},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3853938579559326},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.35944318771362305},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3179740905761719},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.30579572916030884},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24164560437202454},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.16879621148109436}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/soi.2009.5318754","doi":"https://doi.org/10.1109/soi.2009.5318754","is_oa":false,"landing_page_url":"https://doi.org/10.1109/soi.2009.5318754","pdf_url":null,"source":{"id":"https://openalex.org/S4210190736","display_name":"IEEE International SOI Conference (SOI)","issn_l":"1078-621X","issn":["1078-621X","2577-2295"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International SOI Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2007134156","https://openalex.org/W2137195916","https://openalex.org/W2150441742","https://openalex.org/W2168060495"],"related_works":["https://openalex.org/W1990956420","https://openalex.org/W2168060495","https://openalex.org/W2034662988","https://openalex.org/W2058172954","https://openalex.org/W2188015528","https://openalex.org/W2023988004","https://openalex.org/W3125379640","https://openalex.org/W2053973088","https://openalex.org/W2063859891","https://openalex.org/W2121779734"],"abstract_inverted_index":{"Fully":[0],"integrated":[1],"MESFETs":[2,113],"have":[3,52],"been":[4],"shown":[5],"to":[6,45,59,72,93],"work":[7],"on":[8,74,100,134,149],"multiple":[9],"commercial":[10],"silicon-on-insulator":[11],"(SOI)":[12],"and":[13,43,154,169],"silicon-on-sapphire":[14],"(SOS)":[15],"CMOS":[16,139],"processes":[17],"without":[18],"changing":[19],"a":[20,56,135,150],"step":[21],"in":[22,38,87,144],"the":[23,30,54,95,107,112,116,156],"process":[24,153],"flow.":[25],"The":[26,118,141],"unique":[27],"features":[28],"of":[29,40,111],"MESFET":[31,81,121],"including":[32],"depletion":[33],"mode":[34],"operation,":[35],"breakdown":[36],"voltages":[37,51],"excess":[39],"50":[41],"V,":[42],"easy":[44],"adjust,":[46],"but":[47,114],"well":[48],"controlled":[49],"threshold":[50],"given":[53],"designers":[55],"cost-free":[57],"way":[58],"achieve":[60],"certain":[61],"circuit":[62,83],"design":[63],"solutions":[64],"that":[65,105],"were":[66,85,98,147,173],"previously":[67],"cost":[68],"inefficient":[69],"or":[70],"difficult":[71],"implement":[73],"their":[75],"respective":[76],"processes.":[77],"Until":[78],"now,":[79],"silicon":[80],"based":[82],"applications":[84,91],"limited":[86],"very":[88],"high":[89],"frequency":[90],"due":[92],"either":[94],"technology":[96],"they":[97],"designed":[99,148],"and/or":[101],"key":[102],"layout":[103],"rules":[104],"affected":[106],"gate":[108],"length,":[109],"Lg,":[110],"not":[115],"MOSFETs.":[117],"highest":[119],"SOI":[120,138,162],"fTreported":[122],"was":[123,127],"~10":[124],"GHz":[125,168],"which":[126],"associated":[128],"with":[129,165],"an":[130],"Lg=":[131,170],"0.4":[132],"mum":[133,137,152,172],"0.35":[136],"process.":[140],"devices":[142],"presented":[143],"this":[145],"abstract":[146],"0.15":[151,171],"represent":[155],"most":[157],"aggressive":[158],"scaling":[159],"yet":[160],"for":[161],"MESFETS.":[163],"Devices":[164],"fT>":[166],"45":[167],"achieved.":[174]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}