{"id":"https://openalex.org/W2160090100","doi":"https://doi.org/10.1109/led.2002.1004234","title":"Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy","display_name":"Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy","publication_year":2002,"publication_date":"2002-06-01","ids":{"openalex":"https://openalex.org/W2160090100","doi":"https://doi.org/10.1109/led.2002.1004234","mag":"2160090100"},"language":"en","primary_location":{"id":"doi:10.1109/led.2002.1004234","doi":"https://doi.org/10.1109/led.2002.1004234","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2002.1004234","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5026012684","display_name":"Michael W. Dashiell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I86501945","display_name":"University of Delaware","ror":"https://ror.org/01sbq1a82","country_code":"US","type":"education","lineage":["https://openalex.org/I86501945"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M.W. Dashiell","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA","institution_ids":["https://openalex.org/I86501945"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082851926","display_name":"James S. Kolodzey","orcid":"https://orcid.org/0000-0001-7250-2614","observed_orcids":["https://orcid.org/0000-0001-7250-2614"]},"institutions":[{"id":"https://openalex.org/I86501945","display_name":"University of Delaware","ror":"https://ror.org/01sbq1a82","country_code":"US","type":"education","lineage":["https://openalex.org/I86501945"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Kolodzey","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA","institution_ids":["https://openalex.org/I86501945"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085233878","display_name":"Paul Crozat","orcid":"https://orcid.org/0000-0002-4308-676X","observed_orcids":["https://orcid.org/0000-0002-4308-676X"]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Crozat","raw_affiliation_strings":["Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France","institution_ids":["https://openalex.org/I102197404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113476187","display_name":"F. Aniel","orcid":"https://orcid.org/0009-0003-3620-8022","observed_orcids":["https://orcid.org/0009-0003-3620-8022"]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Aniel","raw_affiliation_strings":["Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France","institution_ids":["https://openalex.org/I102197404"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108421042","display_name":"Jean\u2013Michel Lourtioz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.M. Lourtioz","raw_affiliation_strings":["Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute d'Electronique Fondamental, Universite Paris XI, Orsay, France","institution_ids":["https://openalex.org/I102197404"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.7508,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.85610029,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"23","issue":"6","first_page":"357","last_page":"359"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7544000148773193,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7544000148773193,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.12929999828338623,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.06710000336170197,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tunnel-diodes","display_name":"tunnel diodes","score":0.8669999837875366},{"id":"https://openalex.org/keywords/bias-dependence","display_name":"bias dependence","score":0.7400000095367432},{"id":"https://openalex.org/keywords/equivalent-circuit-model","display_name":"equivalent circuit model","score":0.7919999957084656},{"id":"https://openalex.org/keywords/junction-capacitance","display_name":"junction capacitance","score":0.8939999938011169},{"id":"https://openalex.org/keywords/p-i-n-junction","display_name":"p-i-n junction","score":0.8659999966621399},{"id":"https://openalex.org/keywords/high-current-density","display_name":"high current density","score":0.6669999957084656},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.9779999852180481},{"id":"https://openalex.org/keywords/speed-index","display_name":"speed index","score":0.9010000228881836},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"molecular beam epitaxy","score":0.7139999866485596}],"concepts":[{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.8067986965179443},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6961556673049927},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.6937366127967834},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6793056130409241},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6104802489280701},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5726938247680664},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5211260914802551},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5192725658416748},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4665180444717407},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.45000508427619934},{"id":"https://openalex.org/C65682993","wikidata":"https://www.wikidata.org/wiki/Q1056451","display_name":"Reflection (computer programming)","level":2,"score":0.41457685828208923},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.413729727268219},{"id":"https://openalex.org/C54419926","wikidata":"https://www.wikidata.org/wiki/Q1246432","display_name":"Molecular beam","level":3,"score":0.41062912344932556},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36707374453544617},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3650016784667969},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30305215716362},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23268964886665344},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20756793022155762},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.13739824295043945},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.08613085746765137},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06823483109474182},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C32909587","wikidata":"https://www.wikidata.org/wiki/Q11369","display_name":"Molecule","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/led.2002.1004234","doi":"https://doi.org/10.1109/led.2002.1004234","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2002.1004234","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-05788223v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-05788223","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Electron Device Letters, 2002, 23 (6), pp.357-359. ⟨10.1109/LED.2002.1004234⟩","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1517992858","https://openalex.org/W1994494107","https://openalex.org/W2002029994","https://openalex.org/W2044304240","https://openalex.org/W2053386137","https://openalex.org/W2057262146","https://openalex.org/W2081771247","https://openalex.org/W2118779841","https://openalex.org/W2139637705","https://openalex.org/W2140406225","https://openalex.org/W2160865082","https://openalex.org/W2162649089","https://openalex.org/W2171503132","https://openalex.org/W4255364650","https://openalex.org/W4285719527","https://openalex.org/W6836743369"],"related_works":["https://openalex.org/W2999820718","https://openalex.org/W2541109547","https://openalex.org/W2165673485","https://openalex.org/W2105322738","https://openalex.org/W2157101384","https://openalex.org/W2058487058","https://openalex.org/W2039626685","https://openalex.org/W2052413663","https://openalex.org/W2006968744","https://openalex.org/W2013994623"],"abstract_inverted_index":{"The":[0,52,68],"bias":[1],"dependence":[2],"of":[3,9,26,65,88],"the":[4,34,38],"single-port":[5],"microwave":[6,69],"reflection":[7,70],"gain":[8,71],"15":[10],"\u03bcm-diameter":[11],"Si":[12],"Esaki":[13],"tunnel":[14],"diodes,":[15],"grown":[16],"by":[17,46],"molecular":[18],"beam":[19],"epitaxy,":[20],"was":[21],"studied":[22],"as":[23],"a":[24,61,83],"function":[25],"frequency.":[27],"A":[28],"simple":[29],"equivalent":[30],"circuit":[31],"accurately":[32],"modeled":[33],"data":[35],"and":[36,59,72],"yielded":[37],"forward-bias":[39],"junction":[40],"capacitance,":[41],"which":[42],"cannot":[43],"be":[44],"obtained":[45],"conventional":[47],"low":[48],"frequency":[49,74],"capacitance-voltage":[50],"techniques.":[51],"diodes":[53],"were":[54,75],"highly-doped":[55],"step":[56],"p-i-n":[57],"junctions":[58],"exhibited":[60],"peak":[62],"current":[63],"density":[64],"16":[66],"kA/cm2.":[67],"cut-off":[73],"12":[76],"dB":[77],"land":[78],"1.6":[79],"GHz,":[80],"respectively,":[81],"with":[82],"speed":[84],"index":[85],"(slew":[86],"rate)":[87],"7.1":[89],"V/ns.":[90]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-10-25T09:29:13.331239","created_date":"2016-06-24T00:00:00"}