{"id":"https://openalex.org/W2157476016","doi":"https://doi.org/10.1109/sispad.1997.621346","title":"The influence of localized states on gate tunnel currents-modeling and simulation","display_name":"The influence of localized states on gate tunnel currents-modeling and simulation","publication_year":2002,"publication_date":"2002-11-22","ids":{"openalex":"https://openalex.org/W2157476016","doi":"https://doi.org/10.1109/sispad.1997.621346","mag":"2157476016"},"language":"en","primary_location":{"id":"doi:10.1109/sispad.1997.621346","doi":"https://doi.org/10.1109/sispad.1997.621346","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sispad.1997.621346","pdf_url":null,"source":{"id":"https://openalex.org/S4306419828","display_name":"International Conference on Simulation of Semiconductor Processes and Devices","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089105727","display_name":"Andreas Wettstein","orcid":"https://orcid.org/0000-0002-2026-2265","observed_orcids":["https://orcid.org/0000-0002-2026-2265"]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4405253860","display_name":"Integrated Systems Laboratory","ror":"https://ror.org/015f9wa43","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253860"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"A. Wettstein","raw_affiliation_strings":["Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4405253860"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082626987","display_name":"Andreas Schenk","orcid":"https://orcid.org/0000-0002-0260-7282","observed_orcids":["https://orcid.org/0000-0002-0260-7282"]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4405253860","display_name":"Integrated Systems Laboratory","ror":"https://ror.org/015f9wa43","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253860"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"A. Schenk","raw_affiliation_strings":["Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4405253860"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027300071","display_name":"A. Scholze","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4405253860","display_name":"Integrated Systems Laboratory","ror":"https://ror.org/015f9wa43","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253860"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"A. Scholze","raw_affiliation_strings":["Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4405253860"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103643964","display_name":"Wolfgang Fichtner","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4405253860","display_name":"Integrated Systems Laboratory","ror":"https://ror.org/015f9wa43","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253860"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"W. Fichtner","raw_affiliation_strings":["Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratoy, ETH Z\u00fcrich, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4405253860"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3756,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.44922587,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"101","last_page":"104"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.03550000116229057,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-tunneling-current","display_name":"gate tunneling current","score":0.6890000104904175},{"id":"https://openalex.org/keywords/localized-states","display_name":"localized states","score":0.652999997138977},{"id":"https://openalex.org/keywords/direct-tunneling","display_name":"direct tunneling","score":0.8500000238418579},{"id":"https://openalex.org/keywords/resonant-tunneling","display_name":"resonant tunneling","score":0.9139999747276306},{"id":"https://openalex.org/keywords/fowler-nordheim-tunneling","display_name":"Fowler-Nordheim tunneling","score":0.9929999709129333},{"id":"https://openalex.org/keywords/carrier-confinement","display_name":"carrier confinement","score":0.7139999866485596},{"id":"https://openalex.org/keywords/oxide-thickness","display_name":"oxide thickness","score":0.39399999380111694}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.8692896366119385},{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.5372090339660645},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.516218900680542},{"id":"https://openalex.org/C500300565","wikidata":"https://www.wikidata.org/wiki/Q925667","display_name":"Computer simulation","level":2,"score":0.4480828642845154},{"id":"https://openalex.org/C63036615","wikidata":"https://www.wikidata.org/wiki/Q165498","display_name":"Schr\u00f6dinger equation","level":2,"score":0.4186983108520508},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.41410359740257263},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38969939947128296},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.3742786645889282},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.35720354318618774},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3524342179298401},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.19232222437858582},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.18891483545303345},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08760449290275574},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08662477135658264}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/sispad.1997.621346","doi":"https://doi.org/10.1109/sispad.1997.621346","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sispad.1997.621346","pdf_url":null,"source":{"id":"https://openalex.org/S4306419828","display_name":"International Conference on Simulation of Semiconductor Processes and Devices","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.24.5689","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.24.5689","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://www.iis.ee.ethz.ch/~schenk/SISPAD97.ps.gz","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W572400835","https://openalex.org/W1573724743","https://openalex.org/W1593555712","https://openalex.org/W1985854442","https://openalex.org/W2062181008","https://openalex.org/W2082835850","https://openalex.org/W2095928799","https://openalex.org/W2464599080"],"related_works":["https://openalex.org/W2028180168","https://openalex.org/W2352626185","https://openalex.org/W1974840791","https://openalex.org/W1985723797","https://openalex.org/W1597716920","https://openalex.org/W1706263456","https://openalex.org/W2109581731","https://openalex.org/W1987107454","https://openalex.org/W2020800575","https://openalex.org/W1882527122"],"abstract_inverted_index":{"In":[0],"the":[1,11,60,63,68,75,78,91],"numerical":[2],"simulation":[3,49],"of":[4,50,62,65,77],"ultra-small":[5],"MOSFETs":[6],"with":[7,85,90],"oxide":[8,34],"thicknesses":[9],"in":[10,67],"range":[12],"2":[13],"to":[14,21],"4":[15],"nm,":[16],"gate":[17],"leakage":[18],"currents":[19],"have":[20],"be":[22],"modeled":[23],"on":[24,74],"a":[25,47,54,86],"sound":[26],"physical":[27],"basis.":[28],"The":[29],"main":[30],"mechanisms":[31],"apart":[32],"from":[33],"non-idealities":[35],"are":[36],"direct":[37,51,79],"and":[38,95],"resonant":[39],"tunneling":[40,42,52],"(Fowler-Nordheim":[41],"at":[43],"large":[44],"biases).":[45],"Applying":[46],"self-consistent":[48],"using":[53],"fully":[55],"analytical":[56],"model,":[57],"we":[58],"study":[59],"impact":[61],"confinement":[64],"carriers":[66],"inversion":[69],"channel":[70],"(quasi":[71],"2D":[72],"states)":[73],"size":[76],"tunnel":[80],"current.":[81],"This":[82],"is":[83],"achieved":[84],"Poisson-Schrodinger":[87],"solver":[88],"integrated":[89],"device":[92],"simulator":[93],"DESSIS-ISE,":[94],"by":[96],"applying":[97],"Bardeen's":[98],"perturbational":[99],"method.":[100]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}