{"id":"https://openalex.org/W2154118371","doi":"https://doi.org/10.1109/t-ed.1975.18103","title":"Field-effect transistor versus analog transistor (static induction transistor)","display_name":"Field-effect transistor versus analog transistor (static induction transistor)","publication_year":1975,"publication_date":"1975-04-01","ids":{"openalex":"https://openalex.org/W2154118371","doi":"https://doi.org/10.1109/t-ed.1975.18103","mag":"2154118371"},"language":"en","primary_location":{"id":"doi:10.1109/t-ed.1975.18103","doi":"https://doi.org/10.1109/t-ed.1975.18103","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1975.18103","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5062075135","display_name":"Jun\u2010ichi Nishizawa","orcid":"https://orcid.org/0000-0001-5233-0827","observed_orcids":["https://orcid.org/0000-0001-5233-0827"]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405285984","display_name":"Research Institute of Electrical Communication, Tohoku University","ror":"https://ror.org/00vbrys56","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J. Nishizawa","raw_affiliation_strings":["Tohoku University, Sendai, Japan","Research Institute of Electrical Communication, University of Tohoku, Sendai, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Tohoku University, Sendai, Japan","institution_ids":["https://openalex.org/I201537933"]},{"raw_affiliation_string":"Research Institute of Electrical Communication, University of Tohoku, Sendai, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405285984"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067508305","display_name":"Tadashi Terasaki","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Terasaki","raw_affiliation_strings":["Semiconductor Research Institute, Sendai, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research Institute, Sendai, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111961658","display_name":"J. Shibata","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Shibata","raw_affiliation_strings":["Semiconductor Research Institute, Sendai, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research Institute, Sendai, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":16.145,"has_fulltext":false,"cited_by_count":413,"citation_normalized_percentile":{"value":0.99465445,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"22","issue":"4","first_page":"185","last_page":"197"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8140000104904175,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8140000104904175,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.06989999860525131,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.06520000100135803,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/field-effect-transistors","display_name":"field-effect transistors","score":0.8479999899864197},{"id":"https://openalex.org/keywords/static-induction-transistor","display_name":"static induction transistor","score":0.9800000190734863},{"id":"https://openalex.org/keywords/negative-feedback","display_name":"negative feedback","score":0.8090000152587891},{"id":"https://openalex.org/keywords/pinch-off-voltage","display_name":"pinch-off voltage","score":0.6729999780654907},{"id":"https://openalex.org/keywords/transfer-conductance","display_name":"transfer conductance","score":0.9390000104904175},{"id":"https://openalex.org/keywords/variable-resistor","display_name":"variable resistor","score":0.7390000224113464},{"id":"https://openalex.org/keywords/microwave-transistors","display_name":"microwave transistors","score":0.8109999895095825},{"id":"https://openalex.org/keywords/integrated-circuits","display_name":"integrated circuits","score":0.5920000076293945},{"id":"https://openalex.org/keywords/low-noise","display_name":"low noise","score":0.5450000166893005},{"id":"https://openalex.org/keywords/low-distortion","display_name":"low distortion","score":0.9359999895095825}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7929314374923706},{"id":"https://openalex.org/C158470141","wikidata":"https://www.wikidata.org/wiki/Q7604169","display_name":"Static induction transistor","level":5,"score":0.7399967908859253},{"id":"https://openalex.org/C123544296","wikidata":"https://www.wikidata.org/wiki/Q176129","display_name":"Triode","level":4,"score":0.6553696393966675},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4939265847206116},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.47044625878334045},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4281059205532074},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41083383560180664},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3958759009838104},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3653832674026489},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.24395787715911865},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12093958258628845}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/t-ed.1975.18103","doi":"https://doi.org/10.1109/t-ed.1975.18103","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1975.18103","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1972301965","https://openalex.org/W1977963257","https://openalex.org/W1978579361","https://openalex.org/W1987070523","https://openalex.org/W2003265764","https://openalex.org/W2005677081","https://openalex.org/W2007524245","https://openalex.org/W2012576994","https://openalex.org/W2016484270","https://openalex.org/W2018015394","https://openalex.org/W2019600822","https://openalex.org/W2022282876","https://openalex.org/W2030872643","https://openalex.org/W2031766713","https://openalex.org/W2031951103","https://openalex.org/W2032286867","https://openalex.org/W2052419926","https://openalex.org/W2058759958","https://openalex.org/W2071690984","https://openalex.org/W2088871145","https://openalex.org/W2090522382","https://openalex.org/W2104464718","https://openalex.org/W2126140108","https://openalex.org/W2139219458","https://openalex.org/W2296120540","https://openalex.org/W3021238137"],"related_works":["https://openalex.org/W2026209295","https://openalex.org/W2023453359","https://openalex.org/W1985198415","https://openalex.org/W2084954910","https://openalex.org/W4232449690","https://openalex.org/W2325220787","https://openalex.org/W2501347054","https://openalex.org/W2046778515","https://openalex.org/W2015060947","https://openalex.org/W2033905141"],"abstract_inverted_index":{"The":[0,152,183,206],"reason":[1],"why":[2],"the":[3,7,18,21,31,36,39,45,64,75,81,96,103,109,119,123,128,131,146,150,158,175,186,192,202,229],"usual":[4],"FET":[5],"shows":[6,130],"saturated":[8],"characteristics":[9,104,133,188],"has":[10,98,125,185,208,224],"been":[11,210,225],"shown":[12],"that":[13,58,156],"with":[14,191],"increasing":[15],"drain":[16],"voltage,":[17,41],"effect":[19],"of":[20,30,38,137,145,157,231],"negative":[22,83],"feedback":[23,84],"action,":[24],"increases":[25],"through":[26],"a":[27,59,114,138,143,232,239,247],"marked":[28],"increase":[29],"Series":[32],"channel":[33,97,124],"resistance":[34],"in":[35,61,72,189,228],"neighborhood":[37],"pinch-off":[40],"under":[42],"which":[43,195],"condition":[44],"apparent":[46],"transfercon-ductanceG_{m'}=":[47],"G_{m}/(1":[48],"+":[49],"r_{s}.G_{m})becomesG_{m'}":[50],"\\simeq":[51,90],"r_{s}^{-1}.":[52],"It":[53],"is":[54,86,163,172,196],"also":[55],"pointed":[56],"out":[57],"transistor":[60,110,129,153,234,241],"analogy":[62],"to":[63,135,155,200,212],"vacuum":[65,139,159],"type":[66,162],"proposed":[67],"by":[68,198],"Watanabe":[69],"and":[70,107,218,221,246,252],"Nishizawa":[71],"1950,":[73],"exhibits":[74],"nonsaturated":[76],"build-up":[77,132],"character":[78,171],"only":[79],"When":[80],"internal":[82],"action":[85],"as":[87,113,142,178,180,260,262],"little":[88],"asG_{m'}":[89],"G_{m}.":[91],"In":[92],"this":[93],"case,":[94],"when":[95,122],"not":[99],"yet":[100],"pinched":[101],"off,":[102],"are":[105,257],"ohmic":[106],"then":[108],"can":[111],"operate":[112],"good":[115],"variable":[116,263],"resistor;":[117],"on":[118,174],"other":[120],"hand,":[121],"already":[126,209,226],"pinched,":[127],"similar":[134,154],"those":[136],"tube":[140,160],"triode":[141,161],"result":[144],"static":[147,176],"induction":[148,177],"from":[149],"drain.":[151],"named":[164],"\"Static":[165],"Induction":[166],"Transistor,\"":[167],"because":[168],"its":[169,222],"output":[170],"based":[173],"well":[179,261],"input":[181],"characteristics.":[182],"SIT":[184,207],"exponential":[187],"contrast":[190],"\"Analog":[193],"Transistor\"":[194],"expected":[197],"Shockley":[199],"follow":[201],"space-charge":[203],"conduction":[204],"law.":[205],"ascertained":[211],"have":[213],"low":[214,216],"noise,":[215],"distortion,":[217],"high-power":[219,233],"capability,":[220],"fabrication":[223],"realized":[227],"form":[230],"(2":[235],"kW,":[236],"8":[237],"MHz),":[238],"high-frequency":[240],"(a":[242],"few":[243],"watts,":[244],"UHF),":[245],"high-speed":[248,254],"thyristor.":[249],"Microwave":[250],"transistors":[251],"very":[253],"integrated":[255],"circuits":[256],"being":[258],"constructed,":[259],"resistors.":[264]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":9},{"year":2016,"cited_by_count":10},{"year":2015,"cited_by_count":10},{"year":2014,"cited_by_count":6},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}