{"id":"https://openalex.org/W2152012503","doi":"https://doi.org/10.1109/mie.2012.2193291","title":"Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated","display_name":"Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated","publication_year":2012,"publication_date":"2012-06-01","ids":{"openalex":"https://openalex.org/W2152012503","doi":"https://doi.org/10.1109/mie.2012.2193291","mag":"2152012503"},"language":"en","primary_location":{"id":"doi:10.1109/mie.2012.2193291","doi":"https://doi.org/10.1109/mie.2012.2193291","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mie.2012.2193291","pdf_url":null,"source":{"id":"https://openalex.org/S32918732","display_name":"IEEE Industrial Electronics Magazine","issn_l":"1932-4529","issn":["1932-4529","1941-0115"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Industrial Electronics Magazine","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003624399","display_name":"Jacek R\u0105bkowski","orcid":"https://orcid.org/0000-0001-8857-3505","observed_orcids":["https://orcid.org/0000-0001-8857-3505"]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"J. Rabkowski","raw_affiliation_strings":["Electrical Machines and Power Electronics Lab, KTH Royal Institute of Technology, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Machines and Power Electronics Lab, KTH Royal Institute of Technology, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003594106","display_name":"Dimosthenis Peftitsis","orcid":"https://orcid.org/0000-0002-4041-7842","observed_orcids":["https://orcid.org/0000-0002-4041-7842"]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"D. Peftitsis","raw_affiliation_strings":["Dept of Electrical Machines & Power Electronics, Royal Institute of Technology-KTH, Stockholm, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept of Electrical Machines & Power Electronics, Royal Institute of Technology-KTH, Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034709081","display_name":"Hans\u2010Peter Nee","orcid":"https://orcid.org/0000-0002-1755-1365","observed_orcids":["https://orcid.org/0000-0002-1755-1365"]},"institutions":[{"id":"https://openalex.org/I86987016","display_name":"KTH Royal Institute of Technology","ror":"https://ror.org/026vcq606","country_code":"SE","type":"education","lineage":["https://openalex.org/I86987016"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"H. Nee","raw_affiliation_strings":["KTH Royal Institute of Technology, Royal Institute of Technology-KTH, Stockholm, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"KTH Royal Institute of Technology, Royal Institute of Technology-KTH, Stockholm, Sweden","institution_ids":["https://openalex.org/I86987016"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I86987016"],"apc_list":null,"apc_paid":null,"fwci":14.6496,"has_fulltext":false,"cited_by_count":427,"citation_normalized_percentile":{"value":0.99327708,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":100},"biblio":{"volume":"6","issue":"2","first_page":"17","last_page":"26"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.9729999899864197},{"id":"https://openalex.org/keywords/power-electronics","display_name":"power electronics","score":0.7680000066757202},{"id":"https://openalex.org/keywords/silicon-alternatives","display_name":"silicon alternatives","score":0.5320000052452087},{"id":"https://openalex.org/keywords/voltage-drop","display_name":"voltage drop","score":0.7559999823570251},{"id":"https://openalex.org/keywords/high-operating-temperature","display_name":"high-temperature operation","score":0.8740000128746033},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.9890000224113464},{"id":"https://openalex.org/keywords/power-conversion-efficiency","display_name":"power conversion efficiency","score":0.6359999775886536},{"id":"https://openalex.org/keywords/high-frequency-switching","display_name":"high switching frequency","score":0.6290000081062317}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8481979370117188},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.7462930679321289},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6883808374404907},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.6042881011962891},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6041678786277771},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5704647898674011},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.519485592842102},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5089631080627441},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.506135880947113},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4949113726615906},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4450829029083252},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.418399840593338},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4090266823768616},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3224692940711975},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27469974756240845},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05878669023513794},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mie.2012.2193291","doi":"https://doi.org/10.1109/mie.2012.2193291","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mie.2012.2193291","pdf_url":null,"source":{"id":"https://openalex.org/S32918732","display_name":"IEEE Industrial Electronics Magazine","issn_l":"1932-4529","issn":["1932-4529","1941-0115"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Industrial Electronics Magazine","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5690000057220459,"id":"https://metadata.un.org/sdg/7"},{"display_name":"Industry, innovation and infrastructure","score":0.4943999946117401,"id":"https://metadata.un.org/sdg/9"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":43,"referenced_works":["https://openalex.org/W54747775","https://openalex.org/W1652801506","https://openalex.org/W1665614214","https://openalex.org/W1926389857","https://openalex.org/W1956316136","https://openalex.org/W1978262178","https://openalex.org/W1988164461","https://openalex.org/W1999148066","https://openalex.org/W2008347451","https://openalex.org/W2032938373","https://openalex.org/W2039393772","https://openalex.org/W2061118846","https://openalex.org/W2076826624","https://openalex.org/W2085893302","https://openalex.org/W2089796964","https://openalex.org/W2097140522","https://openalex.org/W2099708754","https://openalex.org/W2103230300","https://openalex.org/W2106170349","https://openalex.org/W2111134324","https://openalex.org/W2121044182","https://openalex.org/W2127005315","https://openalex.org/W2131563443","https://openalex.org/W2134287996","https://openalex.org/W2136250228","https://openalex.org/W2139201945","https://openalex.org/W2142155217","https://openalex.org/W2143052476","https://openalex.org/W2144267582","https://openalex.org/W2146788446","https://openalex.org/W2147762854","https://openalex.org/W2149961997","https://openalex.org/W2155033051","https://openalex.org/W2171886847","https://openalex.org/W2180449530","https://openalex.org/W2534287116","https://openalex.org/W2534763128","https://openalex.org/W2535837582","https://openalex.org/W2543837832","https://openalex.org/W3205373515","https://openalex.org/W6602242596","https://openalex.org/W6637015337","https://openalex.org/W6640810041"],"related_works":["https://openalex.org/W1583840848","https://openalex.org/W2319841102","https://openalex.org/W1748223198","https://openalex.org/W2577976329","https://openalex.org/W2021010839","https://openalex.org/W4390151491","https://openalex.org/W2127450915","https://openalex.org/W4300624761","https://openalex.org/W2026900636","https://openalex.org/W2170470723"],"abstract_inverted_index":{"During":[0],"recent":[1],"years,":[2],"silicon":[3,23],"carbide":[4],"(SiC)":[5],"power":[6,39],"electronics":[7,40],"has":[8],"gone":[9],"from":[10],"being":[11,17],"a":[12,18,59],"promising":[13],"future":[14],"technology":[15,25,89],"to":[16,21],"potent":[19],"alternative":[20],"state-of-the-art":[22],"(Si)":[24],"in":[26,80],"high-efficiency,":[27],"highfrequency,":[28],"and":[29,52,68],"high-temperature":[30],"applications.":[31],"The":[32],"reasons":[33],"for":[34],"this":[35],"are":[36,64],"that":[37,61,74],"SiC":[38,88],"may":[41],"have":[42],"higher":[43,49,53],"voltage":[44,47],"ratings,":[45],"lower":[46],"drops,":[48],"maximum":[50],"temperatures,":[51],"thermal":[54],"conductivities.":[55],"It":[56],"is":[57],"now":[58],"fact":[60],"several":[62],"manufacturers":[63],"capable":[65],"of":[66,77,86],"developing":[67],"processing":[69],"high-quality":[70],"transistors":[71],"at":[72],"cost":[73],"permit":[75],"introduction":[76],"new":[78],"products":[79],"application":[81],"areas":[82],"where":[83],"the":[84,87],"benefits":[85],"can":[90],"provide":[91],"significant":[92],"system":[93],"advantages.":[94]},"counts_by_year":[{"year":2026,"cited_by_count":21},{"year":2025,"cited_by_count":25},{"year":2024,"cited_by_count":31},{"year":2023,"cited_by_count":38},{"year":2022,"cited_by_count":27},{"year":2021,"cited_by_count":35},{"year":2020,"cited_by_count":34},{"year":2019,"cited_by_count":32},{"year":2018,"cited_by_count":41},{"year":2017,"cited_by_count":34},{"year":2016,"cited_by_count":33},{"year":2015,"cited_by_count":30},{"year":2014,"cited_by_count":21},{"year":2013,"cited_by_count":22},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}