{"id":"https://openalex.org/W2150097652","doi":"https://doi.org/10.1109/ted.2006.888629","title":"n-MOSFET With Silicon Carbon Source/Drain for Enhancement of Carrier Transport","display_name":"n-MOSFET With Silicon Carbon Source/Drain for Enhancement of Carrier Transport","publication_year":2007,"publication_date":"2007-01-23","ids":{"openalex":"https://openalex.org/W2150097652","doi":"https://doi.org/10.1109/ted.2006.888629","mag":"2150097652"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2006.888629","doi":"https://doi.org/10.1109/ted.2006.888629","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2006.888629","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110151866","display_name":"King-Jien Chui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"King-Jien Chui","raw_affiliation_strings":["Taiwan Semicond. Manuf. Co., Hsinchu","Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Taiwan Semicond. Manuf. Co., Hsinchu","institution_ids":["https://openalex.org/I4210120917"]},{"raw_affiliation_string":"Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012718538","display_name":"Kah\u2010Wee Ang","orcid":"https://orcid.org/0000-0003-1919-3351","observed_orcids":["https://orcid.org/0000-0003-1919-3351"]},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Kah-Wee Ang","raw_affiliation_strings":["Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111974571","display_name":"Narayanan Balasubramanian","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Narayanan Balasubramanian","raw_affiliation_strings":["Institute of Microelectronics, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Singapore","institution_ids":["https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023441174","display_name":"Mingfu Li","orcid":"https://orcid.org/0000-0002-4812-8244","observed_orcids":["https://orcid.org/0000-0002-4812-8244"]},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Ming-Fu Li","raw_affiliation_strings":["Department of Electrical and Computer Engineering, National University of Singapore, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, National University of Singapore, Singapore","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067991452","display_name":"Ganesh Shankar Samudra","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Ganesh S. Samudra","raw_affiliation_strings":["Department of Electrical and Computer Engineering, National University of Singapore, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, National University of Singapore, Singapore","institution_ids":["https://openalex.org/I165932596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025542675","display_name":"Yee\u2010Chia Yeo","orcid":"https://orcid.org/0000-0003-1016-1687","observed_orcids":["https://orcid.org/0000-0003-1016-1687"]},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I165932596","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49","country_code":"SG","type":"education","lineage":["https://openalex.org/I165932596"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yee-Chia Yeo","raw_affiliation_strings":["National University of Singapore, Singapore","Technology and Research ASTAR, Agency for Science, Technology and Research, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National University of Singapore, Singapore","institution_ids":["https://openalex.org/I165932596"]},{"raw_affiliation_string":"Technology and Research ASTAR, Agency for Science, Technology and Research, Singapore","institution_ids":["https://openalex.org/I115228651"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":6.8375,"has_fulltext":false,"cited_by_count":54,"citation_normalized_percentile":{"value":0.9679091,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"54","issue":"2","first_page":"249","last_page":"256"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.004000000189989805,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/n-mosfet","display_name":"nMOSFET","score":0.8669999837875366},{"id":"https://openalex.org/keywords/strained-silicon","display_name":"strained silicon","score":0.9100000262260437},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.6110000014305115},{"id":"https://openalex.org/keywords/tensile-strain","display_name":"tensile strain","score":0.8270000219345093},{"id":"https://openalex.org/keywords/compressive-strain","display_name":"compressive strain","score":0.9449999928474426},{"id":"https://openalex.org/keywords/electron-mobility-enhancement","display_name":"electron mobility enhancement","score":0.9649999737739563},{"id":"https://openalex.org/keywords/conduction-band-offset","display_name":"conduction band offset","score":0.8930000066757202},{"id":"https://openalex.org/keywords/drive-current-enhancement","display_name":"drive current enhancement","score":0.8560000061988831},{"id":"https://openalex.org/keywords/selective-epitaxial-growth","display_name":"selective epitaxial growth","score":0.777999997138977},{"id":"https://openalex.org/keywords/50-nm-gate-length","display_name":"50 nm gate length","score":0.8069999814033508}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4305607080459595},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4108262062072754},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4050559401512146},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40462279319763184},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.35597294569015503},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2592847943305969},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24241787195205688},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1055859923362732},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09767350554466248},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.08976376056671143},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/ted.2006.888629","doi":"https://doi.org/10.1109/ted.2006.888629","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2006.888629","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},{"id":"pmh:oai:scholarbank.nus.edu.sg:10635/82767","doi":null,"is_oa":false,"landing_page_url":"http://scholarbank.nus.edu.sg/handle/10635/82767","pdf_url":null,"source":{"id":"https://openalex.org/S7407052290","display_name":"National University of Singapore","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Scopus","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1512402821","https://openalex.org/W1625600922","https://openalex.org/W1831416269","https://openalex.org/W1924125541","https://openalex.org/W1974389225","https://openalex.org/W1980006230","https://openalex.org/W1985420555","https://openalex.org/W1992679645","https://openalex.org/W1998643254","https://openalex.org/W2027766353","https://openalex.org/W2028960375","https://openalex.org/W2064573497","https://openalex.org/W2101609668","https://openalex.org/W2103471982","https://openalex.org/W2109617856","https://openalex.org/W2137900832","https://openalex.org/W2145547658","https://openalex.org/W2154869256","https://openalex.org/W2536792177","https://openalex.org/W2540108101","https://openalex.org/W2540536172","https://openalex.org/W2541857965","https://openalex.org/W2546101900","https://openalex.org/W2794145602","https://openalex.org/W6729173152"],"related_works":["https://openalex.org/W2547379096","https://openalex.org/W2167527685","https://openalex.org/W2152648696","https://openalex.org/W2081382846","https://openalex.org/W2545011240","https://openalex.org/W2124192045","https://openalex.org/W2022329715","https://openalex.org/W2070910389","https://openalex.org/W2095803295","https://openalex.org/W2021881617"],"abstract_inverted_index":{"A":[0],"novel":[1],"strained-silicon":[2],"(Si)":[3],"n-MOSFET":[4,13,100],"with":[5],"50-nm":[6],"gate":[7,112],"length":[8,113],"is":[9,42],"reported.":[10],"The":[11,37,71],"strained":[12,79],"features":[14],"silicon-carbon":[15],"(Si1-yCy)":[16],"source":[17],"and":[18,28,56,77],"drain":[19],"(S/D)":[20],"regions":[21,98],"formed":[22],"by":[23],"a":[24,29,111],"Si":[25,50,62,80],"recess":[26],"etch":[27],"selective":[30],"epitaxy":[31],"of":[32,46,95,106,114],"Si1-yCyin":[33],"the":[34,61,75,78,92,96],"S/D":[35],"regions.":[36],"carbon":[38],"mole":[39],"fraction":[40],"incorporated":[41],"0.013.":[43],"Lattice":[44],"mismatch":[45],"~0.56%":[47],"between":[48],"Si0.987C0.013and":[49],"results":[51],"in":[52,60],"lateral":[53],"tensile":[54],"strain":[55,59],"vertical":[57],"compressive":[58],"channel":[63,81],"region,":[64],"both":[65],"contributing":[66],"to":[67,85,108],"substantial":[68],"electron-mobility":[69],"enhancement.":[70],"conduction-band":[72],"offset":[73],"DeltaEcbetween":[74],"Si0.987C0.013source":[76],"could":[82],"also":[83],"contribute":[84],"an":[86],"increased":[87],"electron":[88],"injection":[89],"velocity":[90],"nuinjfrom":[91],"source.":[93],"Implementation":[94],"Si0.987C0.013S/D":[97],"for":[99],"provides":[101],"significant":[102],"drive":[103],"current":[104],"IDsatenhancement":[105],"up":[107],"50%":[109],"at":[110],"50":[115],"nm":[116]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}