{"id":"https://openalex.org/W2149754697","doi":"https://doi.org/10.1109/68.212695","title":"Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD","display_name":"Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD","publication_year":1993,"publication_date":"1993-04-01","ids":{"openalex":"https://openalex.org/W2149754697","doi":"https://doi.org/10.1109/68.212695","mag":"2149754697"},"language":"en","primary_location":{"id":"doi:10.1109/68.212695","doi":"https://doi.org/10.1109/68.212695","is_oa":false,"landing_page_url":"https://doi.org/10.1109/68.212695","pdf_url":null,"source":{"id":"https://openalex.org/S27723657","display_name":"IEEE Photonics Technology Letters","issn_l":"1041-1135","issn":["1041-1135","1941-0174"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Photonics Technology Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004379411","display_name":"Timothy M. Cockerill","orcid":"https://orcid.org/0000-0002-1548-1922","observed_orcids":["https://orcid.org/0000-0002-1548-1922"]},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T.M. Cockerill","raw_affiliation_strings":["Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023690463","display_name":"David V. Forbes","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.V. Forbes","raw_affiliation_strings":["Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H. Han","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Han","raw_affiliation_strings":["Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA","institution_ids":["https://openalex.org/I157725225"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014428007","display_name":"J. J. Coleman","orcid":"https://orcid.org/0000-0001-6217-0812","observed_orcids":["https://orcid.org/0000-0001-6217-0812"]},"institutions":[{"id":"https://openalex.org/I157725225","display_name":"University of Illinois Urbana-Champaign","ror":"https://ror.org/047426m28","country_code":"US","type":"education","lineage":["https://openalex.org/I157725225"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.J. Coleman","raw_affiliation_strings":["Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Materials Research Laboratory and Microelectronics Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, USA","institution_ids":["https://openalex.org/I157725225"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I157725225"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.9217,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.82184006,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"5","issue":"4","first_page":"448","last_page":"450"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9042999744415283,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9042999744415283,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.06480000168085098,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.02319999970495701,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/monolithic-integration","display_name":"monolithic integration","score":0.7950000166893005},{"id":"https://openalex.org/keywords/ingaas-gaas-algaas","display_name":"InGaAs/GaAs/AlGaAs","score":0.9139999747276306},{"id":"https://openalex.org/keywords/passive-waveguides","display_name":"passive waveguides","score":0.9829999804496765},{"id":"https://openalex.org/keywords/selective-area-growth","display_name":"selective area growth","score":0.925000011920929},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8489999771118164},{"id":"https://openalex.org/keywords/growth-inhibition","display_name":"growth inhibition","score":0.8450000286102295},{"id":"https://openalex.org/keywords/silicon-dioxide-mask","display_name":"silicon dioxide mask","score":0.9700000286102295},{"id":"https://openalex.org/keywords/absorption-loss","display_name":"absorption loss","score":0.8330000042915344}],"concepts":[{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.7954581379890442},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.72825688123703},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6469465494155884},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.607157826423645},{"id":"https://openalex.org/C200687136","wikidata":"https://www.wikidata.org/wiki/Q11233438","display_name":"Waveguide","level":2,"score":0.5698117613792419},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.5596835017204285},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5510825514793396},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.49251589179039},{"id":"https://openalex.org/C205507967","wikidata":"https://www.wikidata.org/wiki/Q900625","display_name":"Quantum efficiency","level":2,"score":0.45896434783935547},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4534209072589874},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43366312980651855},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.4268798232078552},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.33995386958122253},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1529412865638733},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.10550689697265625},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10264232754707336},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/68.212695","doi":"https://doi.org/10.1109/68.212695","is_oa":false,"landing_page_url":"https://doi.org/10.1109/68.212695","pdf_url":null,"source":{"id":"https://openalex.org/S27723657","display_name":"IEEE Photonics Technology Letters","issn_l":"1041-1135","issn":["1041-1135","1941-0174"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Photonics Technology Letters","raw_type":"journal-article"},{"id":"pmh:oai:oasis.postech.ac.kr:2014.oak/28175","doi":null,"is_oa":false,"landing_page_url":"https://oasis.postech.ac.kr/handle/2014.oak/28175","pdf_url":null,"source":{"id":"https://openalex.org/S4306401965","display_name":"Open Access System for Information Sharing (Pohang University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I123900574","host_organization_name":"Pohang University of Science and Technology","host_organization_lineage":["https://openalex.org/I123900574"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1972785495","https://openalex.org/W2000558581","https://openalex.org/W2045951523","https://openalex.org/W2058675776","https://openalex.org/W2065228321","https://openalex.org/W2065298287","https://openalex.org/W2072078669","https://openalex.org/W2076816275","https://openalex.org/W2085190768","https://openalex.org/W2154856857","https://openalex.org/W2158392605"],"related_works":["https://openalex.org/W2058675776","https://openalex.org/W7048897379","https://openalex.org/W2104270953","https://openalex.org/W2388027421","https://openalex.org/W2031564891","https://openalex.org/W3006276062","https://openalex.org/W2027430435","https://openalex.org/W2463476506","https://openalex.org/W2072933162","https://openalex.org/W2410528565"],"abstract_inverted_index":{"The":[0],"monolithic":[1],"integration":[2],"of":[3,44,52],"a":[4,11,27],"strained":[5],"layer":[6],"InGaAs-GaAs-AlGaAs":[7],"quantum-well":[8,58],"laser":[9],"with":[10],"passive":[12,78],"waveguide":[13,79],"by":[14],"conventional":[15],"atmospheric":[16],"pressure":[17],"metalorganic":[18],"chemical":[19],"vapor":[20],"growth":[21,37,67],"is":[22,31],"discussed.":[23],"Growth":[24],"inhibition":[25],"from":[26],"silicon":[28],"dioxide":[29],"mask":[30],"the":[32,42,45,50,53,61],"mechanism":[33],"used":[34],"for":[35],"selective-area":[36],"rate":[38],"enhancement.":[39],"Variation":[40],"in":[41,56,64,75],"width":[43],"oxide":[46],"stripe":[47],"opening":[48],"along":[49],"length":[51],"device":[54],"results":[55],"different":[57],"thicknesses,":[59],"allowing":[60],"light":[62],"generated":[63],"one":[65],"selective":[66],"region":[68],"to":[69],"propagate":[70],"without":[71],"significant":[72],"absorption":[73],"loss":[74],"an":[76],"adjacent":[77],"region.>":[80]},"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}