{"id":"https://openalex.org/W2147995205","doi":"https://doi.org/10.1117/12.659057","title":"Mask substrate birefringence requirements for hyper-NA lithography","display_name":"Mask substrate birefringence requirements for hyper-NA lithography","publication_year":2006,"publication_date":"2006-03-10","ids":{"openalex":"https://openalex.org/W2147995205","doi":"https://doi.org/10.1117/12.659057","mag":"2147995205"},"language":"en","primary_location":{"id":"doi:10.1117/12.659057","doi":"https://doi.org/10.1117/12.659057","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.659057","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087347788","display_name":"Mark A. van de Kerkhof","orcid":"https://orcid.org/0000-0001-6837-6897","observed_orcids":["https://orcid.org/0000-0001-6837-6897"]},"institutions":[{"id":"https://openalex.org/I927257375","display_name":"ASML (Netherlands)","ror":"https://ror.org/01vxknj13","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210092504","https://openalex.org/I927257375"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Mark van de Kerkhof","raw_affiliation_strings":["ASML,Netherlands"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ASML,Netherlands","institution_ids":["https://openalex.org/I927257375"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069910606","display_name":"Wim de Boeij","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I927257375","display_name":"ASML (Netherlands)","ror":"https://ror.org/01vxknj13","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210092504","https://openalex.org/I927257375"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Wim de Boeij","raw_affiliation_strings":["ASML (Netherlands)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ASML (Netherlands)","institution_ids":["https://openalex.org/I927257375"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Marcel Demarteau","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I927257375","display_name":"ASML (Netherlands)","ror":"https://ror.org/01vxknj13","country_code":"NL","type":"company","lineage":["https://openalex.org/I4210092504","https://openalex.org/I927257375"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Marcel Demarteau","raw_affiliation_strings":["ASML (Netherlands)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ASML (Netherlands)","institution_ids":["https://openalex.org/I927257375"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002531841","display_name":"Bernd Geh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210092175","display_name":"ASML (United States)","ror":"https://ror.org/00gtpjy03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210092175","https://openalex.org/I4210092504","https://openalex.org/I927257375"]},{"id":"https://openalex.org/I4210109350","display_name":"Carl Zeiss (United States)","ror":"https://ror.org/01xk5xs43","country_code":"US","type":"company","lineage":["https://openalex.org/I1302207122","https://openalex.org/I4210109350"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bernd Geh","raw_affiliation_strings":["ASML-TDC (United States)","Carl Zeiss (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ASML-TDC (United States)","institution_ids":["https://openalex.org/I4210092175"]},{"raw_affiliation_string":"Carl Zeiss (United States)","institution_ids":["https://openalex.org/I4210109350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012000813","display_name":"Leonardus H. A. Leunissen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Leonardus H. A. Leunissen","raw_affiliation_strings":["IMEC (Belgium)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC (Belgium)","institution_ids":["https://openalex.org/I4210114974"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Patrick Martin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150491032","display_name":"Photronics (United States)","ror":"https://ror.org/05jg7dd90","country_code":"US","type":"company","lineage":["https://openalex.org/I150491032"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Patrick Martin","raw_affiliation_strings":["Photronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Photronics, Inc. (United States)","institution_ids":["https://openalex.org/I150491032"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011449070","display_name":"Mike Cangemi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I150491032","display_name":"Photronics (United States)","ror":"https://ror.org/05jg7dd90","country_code":"US","type":"company","lineage":["https://openalex.org/I150491032"]},{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE","US"],"is_corresponding":false,"raw_author_name":"Mike Cangemi","raw_affiliation_strings":["IMEC (Belgium)","Photronics, Inc. (United States)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IMEC (Belgium)","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"Photronics, Inc. (United States)","institution_ids":["https://openalex.org/I150491032"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.055,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.749976,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"6154","issue":null,"first_page":"615444","last_page":"615444"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11517","display_name":"Advanced optical system design","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12050","display_name":"Optical Polarization and Ellipsometry","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/birefringence","display_name":"birefringence","score":0.9150000214576721},{"id":"https://openalex.org/keywords/optical-stress","display_name":"optical stress","score":0.7099999785423279},{"id":"https://openalex.org/keywords/hyper-na-lithography","display_name":"hyper-NA lithography","score":0.9079999923706055},{"id":"https://openalex.org/keywords/high-na-lithography","display_name":"high-NA lithography","score":0.9070000052452087},{"id":"https://openalex.org/keywords/45-nm-technology-node","display_name":"45 nm node","score":0.8299999833106995},{"id":"https://openalex.org/keywords/polarization","display_name":"polarization","score":0.367000013589859},{"id":"https://openalex.org/keywords/critical-dimension-variation","display_name":"critical dimension variation","score":0.6700000166893005},{"id":"https://openalex.org/keywords/patterning","display_name":"patterning","score":0.5410000085830688},{"id":"https://openalex.org/keywords/imaging-simulation","display_name":"imaging simulation","score":0.44999998807907104}],"concepts":[{"id":"https://openalex.org/C125743686","wikidata":"https://www.wikidata.org/wiki/Q108779","display_name":"Birefringence","level":2,"score":0.9154002666473389},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.7743121981620789},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7296177744865417},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.727465808391571},{"id":"https://openalex.org/C146617872","wikidata":"https://www.wikidata.org/wiki/Q1391868","display_name":"Reticle","level":3,"score":0.652895450592041},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.6168138980865479},{"id":"https://openalex.org/C2779751349","wikidata":"https://www.wikidata.org/wiki/Q1474480","display_name":"Scanner","level":2,"score":0.5508348345756531},{"id":"https://openalex.org/C14737013","wikidata":"https://www.wikidata.org/wiki/Q1319657","display_name":"Photomask","level":4,"score":0.513186514377594},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.502889096736908},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4644477665424347},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.458290696144104},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14341071248054504},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.12338200211524963},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07892206311225891},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.659057","doi":"https://doi.org/10.1117/12.659057","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.659057","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1984737720","https://openalex.org/W2542270347","https://openalex.org/W2039829283","https://openalex.org/W2091073680","https://openalex.org/W2034830384","https://openalex.org/W2028400240","https://openalex.org/W2020830461","https://openalex.org/W2032371110","https://openalex.org/W2004042319","https://openalex.org/W1979519799"],"abstract_inverted_index":{"For":[0],"the":[1,5,18,30,62,66,76,89,95,102,116,121,162],"45nm":[2],"node":[3],"lithography,":[4,156],"mask":[6,23,34,67,96,129,149],"substrate":[7],"properties":[8,64],"will":[9,112,131],"have":[10],"a":[11,26,105],"significant":[12],"impact":[13],"on":[14,115,139],"imaging":[15,126],"performance.":[16],"Analysing":[17],"optical":[19,48],"stress":[20,70,117],"birefringence":[21,41,71,118,130,150],"in":[22,43,46,97],"blanks":[24],"reveals":[25],"wide":[27],"variation":[28],"within":[29],"available":[31],"population":[32],"of":[33,40,65,88,94,104,128,161],"substrates.":[35],"Both":[36],"magnitude":[37],"and":[38,79,101,136,153,157],"orientation":[39],"result":[42],"polarization":[44],"changes":[45],"an":[47,98,159],"system.":[49],"These":[50],"effects":[51,127],"potentially":[52],"produce":[53],"image":[54],"degradation,":[55],"leading":[56],"to":[57],"intra-field":[58],"CD":[59],"variations.":[60],"Besides":[61],"inherent":[63],"blank,":[68],"additional":[69],"can":[72],"be":[73,113,132],"generated":[74],"during":[75],"patterning":[77],"processing":[78],"on-scanner":[80],"reticle":[81],"use.":[82],"The":[83,125],"main":[84],"causes":[85],"are:":[86],"deposition":[87],"absorber":[90],"stack,":[91],"patterning,":[92],"chucking":[93],"exposure":[99,142],"tool":[100],"mounting":[103],"pellicle.":[106],"In":[107],"this":[108],"paper,":[109],"experimental":[110,137],"results":[111],"shown":[114],"introduced":[119],"by":[120],"different":[122],"process":[123],"steps.":[124],"determined":[133],"through":[134],"simulations":[135],"validation":[138],"high-NA":[140],"lithographic":[141],"tools.":[143],"This":[144],"study":[145],"makes":[146],"clear":[147],"how":[148],"impacts":[151],"high":[152],"hyper":[154],"NA":[155],"gives":[158],"indication":[160],"allowed":[163],"tolerances.":[164]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2026-10-20T09:52:01.089006","created_date":"2016-06-24T00:00:00"}