{"id":"https://openalex.org/W2147308352","doi":"https://doi.org/10.1002/pssc.201300436","title":"Nitrogen ion implantation isolation technology for normally\u2010off GaN MISFETs on p\u2010GaN substrate","display_name":"Nitrogen ion implantation isolation technology for normally\u2010off GaN MISFETs on p\u2010GaN substrate","publication_year":2014,"publication_date":"2014-01-24","ids":{"openalex":"https://openalex.org/W2147308352","doi":"https://doi.org/10.1002/pssc.201300436","mag":"2147308352"},"language":"en","primary_location":{"id":"doi:10.1002/pssc.201300436","doi":"https://doi.org/10.1002/pssc.201300436","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssc.201300436","pdf_url":null,"source":{"id":"https://openalex.org/S4210174949","display_name":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","issn_l":"1610-1634","issn":["1610-1634","1610-1642","1862-6351"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","norway-1","poland-40"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi c","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049108574","display_name":"Hayao Kasai","orcid":"https://orcid.org/0009-0008-1895-6154","observed_orcids":["https://orcid.org/0009-0008-1895-6154"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Hayao Kasai","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003448127","display_name":"Hiroki Ogawa","orcid":"https://orcid.org/0000-0002-6990-8311","observed_orcids":["https://orcid.org/0000-0002-6990-8311"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroki Ogawa","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059574491","display_name":"Tomoaki Nishimura","orcid":"https://orcid.org/0000-0002-4555-2146","observed_orcids":["https://orcid.org/0000-0002-4555-2146"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoaki Nishimura","raw_affiliation_strings":["Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo, Japan","institution_ids":["https://openalex.org/I204291657"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054044285","display_name":"Tohru Nakamura","orcid":"https://orcid.org/0000-0003-0800-6258","observed_orcids":["https://orcid.org/0000-0003-0800-6258"]},"institutions":[{"id":"https://openalex.org/I204291657","display_name":"Hosei University","ror":"https://ror.org/00bx6dj65","country_code":"JP","type":"education","lineage":["https://openalex.org/I204291657"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tohru Nakamura","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Hosei University, Koganei, Tokyo 1840003, Japan","institution_ids":["https://openalex.org/I204291657"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5049108574"],"corresponding_institution_ids":["https://openalex.org/I204291657"],"apc_list":null,"apc_paid":null,"fwci":0.6307,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.63817664,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"11","issue":"3-4","first_page":"914","last_page":"917"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nitrogen-ion-implantation","display_name":"nitrogen ion implantation","score":0.9860000014305115},{"id":"https://openalex.org/keywords/device-isolation","display_name":"device isolation","score":0.8149999976158142},{"id":"https://openalex.org/keywords/normally-off-transistors","display_name":"normally-off transistors","score":0.9200000166893005},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.8240000009536743},{"id":"https://openalex.org/keywords/fermi-level-pinning","display_name":"Fermi level pinning","score":0.9359999895095825},{"id":"https://openalex.org/keywords/n-type-inversion-layer","display_name":"n-type inversion layer","score":0.7789999842643738},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8989999890327454},{"id":"https://openalex.org/keywords/buffer-layer","display_name":"buffer layer","score":0.7609999775886536}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7455999255180359},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6983093619346619},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6460939049720764},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.6403468251228333},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.6165255308151245},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5854759216308594},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5232043266296387},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.4973812401294708},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.48559826612472534},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4428061544895172},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1875653862953186},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17682743072509766},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09340623021125793},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/pssc.201300436","doi":"https://doi.org/10.1002/pssc.201300436","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssc.201300436","pdf_url":null,"source":{"id":"https://openalex.org/S4210174949","display_name":"Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics","issn_l":"1610-1634","issn":["1610-1634","1610-1642","1862-6351"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","norway-1","poland-40"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi c","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320309545","display_name":"Synopsys","ror":"https://ror.org/013by2m91"},{"id":"https://openalex.org/F4320320912","display_name":"Ministry of Education, Culture, Sports, Science and Technology","ror":"https://ror.org/048rj2z13"},{"id":"https://openalex.org/F4320322832","display_name":"University of Tokyo","ror":"https://ror.org/057zh3y96"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2737371104","https://openalex.org/W1960214520","https://openalex.org/W3180883711","https://openalex.org/W2610619706","https://openalex.org/W7207538381","https://openalex.org/W2021554946","https://openalex.org/W4402810823","https://openalex.org/W2232792811","https://openalex.org/W4205652606","https://openalex.org/W4318001993"],"abstract_inverted_index":{"Abstract":[0],"Nitrogen":[1],"ion":[2,53],"implanted":[3,54],"isolation":[4,55,74],"technology":[5,56],"to":[6,25,71],"prevent":[7],"leakage":[8,60],"current":[9,23,61],"between":[10,41,62],"adjacent":[11,63],"devices":[12,64],"fabricated":[13],"on":[14,17],"p\u2010GaN":[15,36],"layers":[16,28,40],"sapphire":[18,42],"substrate":[19,43],"is":[20,48],"described.":[21],"Leakage":[22],"due":[24],"n\u2010type":[26],"inversion":[27],"caused":[29],"by":[30],"Fermi":[31],"level":[32],"pinning":[33],"at":[34],"the":[35],"surface":[37],"and":[38,44],"buffer":[39],"GaN":[45],"epitaxial":[46],"layer":[47],"greatly":[49],"reduced.":[50],"With":[51],"nitrogen":[52],"of":[57,68],"this":[58],"study,":[59],"reduced":[65],"five":[66],"orders":[67],"magnitude":[69],"compared":[70],"that":[72],"without":[73],"layers.":[75],"(\u00a9":[76],"2014":[77],"WILEY\u2010VCH":[78],"Verlag":[79],"GmbH":[80],"&":[81],"Co.":[82],"KGaA,":[83],"Weinheim)":[84]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}