{"id":"https://openalex.org/W2145809257","doi":"https://doi.org/10.1109/16.585552","title":"Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor","display_name":"Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor","publication_year":1997,"publication_date":"1997-06-01","ids":{"openalex":"https://openalex.org/W2145809257","doi":"https://doi.org/10.1109/16.585552","mag":"2145809257"},"language":"en","primary_location":{"id":"doi:10.1109/16.585552","doi":"https://doi.org/10.1109/16.585552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.585552","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5107310758","display_name":"V. Ferlet-Cavrois","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"V. Ferlet-Cavrois","raw_affiliation_strings":["Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France","institution_ids":["https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028078057","display_name":"O. Musseau","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"O. Musseau","raw_affiliation_strings":["Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France","institution_ids":["https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034627172","display_name":"J.L. Leray","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.-L. Leray","raw_affiliation_strings":["Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centrede Bruy\u00e8res-le-Ch\u0101tel, CEA, France","institution_ids":["https://openalex.org/I2738703131"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113630902","display_name":"J.L. Pelloie","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I3020098449","display_name":"CEA Grenoble","ror":"https://ror.org/02mg6n827","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I3020098449"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.-L. Pelloie","raw_affiliation_strings":["CEA DTA LETI, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA DTA LETI, Grenoble, France","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I3020098449","https://openalex.org/I4210150049"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007782225","display_name":"Christine Raynaud","orcid":"https://orcid.org/0000-0001-7913-6653","observed_orcids":["https://orcid.org/0000-0001-7913-6653"]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I3020098449","display_name":"CEA Grenoble","ror":"https://ror.org/02mg6n827","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I3020098449"]},{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Raynaud","raw_affiliation_strings":["CEA DTA LETI, Grenoble, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA DTA LETI, Grenoble, France","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I3020098449","https://openalex.org/I4210150049"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.4427,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.81793699,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"44","issue":"6","first_page":"965","last_page":"971"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/total-dose-effects","display_name":"total dose effects","score":0.8389999866485596},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.9210000038146973},{"id":"https://openalex.org/keywords/radiation-hardness","display_name":"radioresistance","score":0.9079999923706055},{"id":"https://openalex.org/keywords/buried-oxide-thickness","display_name":"buried oxide thickness","score":0.7910000085830688},{"id":"https://openalex.org/keywords/lateral-coupling","display_name":"lateral coupling","score":0.4300000071525574}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7650217413902283},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7373600602149963},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6910351514816284},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6551899313926697},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5846232175827026},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5780169367790222},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.5005817413330078},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.42413827776908875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30012667179107666},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.294564425945282},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2501680552959442},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07566547393798828},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/16.585552","doi":"https://doi.org/10.1109/16.585552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.585552","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1528549966","https://openalex.org/W1957275603","https://openalex.org/W1991337738","https://openalex.org/W2011325347","https://openalex.org/W2017966364","https://openalex.org/W2045113730","https://openalex.org/W2053553201","https://openalex.org/W2073755673","https://openalex.org/W2084804304","https://openalex.org/W2091179923","https://openalex.org/W2091865659","https://openalex.org/W2098480540","https://openalex.org/W2102179273","https://openalex.org/W2102191716","https://openalex.org/W2104294479","https://openalex.org/W2119143252","https://openalex.org/W2121031784","https://openalex.org/W2133800303","https://openalex.org/W2134803734","https://openalex.org/W2140257078","https://openalex.org/W2148368172","https://openalex.org/W2152009050","https://openalex.org/W2162166626","https://openalex.org/W2168427332","https://openalex.org/W2545099936"],"related_works":["https://openalex.org/W2039419160","https://openalex.org/W2090413233","https://openalex.org/W2745281798","https://openalex.org/W2027477504","https://openalex.org/W2167574882","https://openalex.org/W1985168019","https://openalex.org/W2152009050","https://openalex.org/W2371365535","https://openalex.org/W2385648314","https://openalex.org/W2969513870"],"abstract_inverted_index":{"The":[0,46,64],"dose":[1,26,81,98],"induced":[2],"threshold":[3],"voltage":[4],"shift":[5],"of":[6,37,41,74],"fully-depleted":[7,38],"NMOS":[8],"transistors":[9,39],"is":[10,50,91],"strongly":[11],"correlated":[12],"with":[13,79],"charge":[14,57],"trapping":[15,58],"in":[16,70],"the":[17,34,42,54,60,71,75,85,92],"buried":[18,21,55],"oxide.":[19],"Thinner":[20],"oxides,":[22],"which":[23],"are":[24],"less":[25],"sensitive":[27],"than":[28,59],"thicker":[29],"ones,":[30],"not":[31],"necessarily":[32],"improve":[33],"radiation":[35],"hardness":[36],"because":[40],"higher":[43],"coupling":[44],"effect.":[45],"lateral":[47,65,94],"parasitic":[48],"transistor":[49],"more":[51],"affected":[52],"by":[53],"oxide":[56],"main":[61],"active":[62],"transistor.":[63],"and":[66,82],"back":[67],"surface":[68,87],"conduction":[69],"thin":[72],"part":[73],"mesa":[76],"edge,":[77],"increases":[78],"ionizing":[80],"adds":[83],"to":[84,97],"front":[86],"conduction.":[88],"Body":[89],"tie":[90],"only":[93],"isolation":[95],"immune":[96],"effects.":[99]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}