{"id":"https://openalex.org/W2145757162","doi":"https://doi.org/10.1109/16.536819","title":"Silicon carbide high-power devices","display_name":"Silicon carbide high-power devices","publication_year":1996,"publication_date":"1996-01-01","ids":{"openalex":"https://openalex.org/W2145757162","doi":"https://doi.org/10.1109/16.536819","mag":"2145757162"},"language":"en","primary_location":{"id":"doi:10.1109/16.536819","doi":"https://doi.org/10.1109/16.536819","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.536819","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2145757162"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111913168","display_name":"Charles E. Weitzel","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1333370159","display_name":"Motorola (United States)","ror":"https://ror.org/01hafxd32","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.E. Weitzel","raw_affiliation_strings":["Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","institution_ids":["https://openalex.org/I1333370159"]},{"raw_affiliation_string":"Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA#TAB#","institution_ids":["https://openalex.org/I1333370159"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067864571","display_name":"John W. Palmour","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.W. Palmour","raw_affiliation_strings":["Cree Research, Inc., Durham, NC, USA","Cree Res.Inc., Durham, NC, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cree Research, Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]},{"raw_affiliation_string":"Cree Res.Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027267262","display_name":"Calvin H. Carter Jr.","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.H. Carter","raw_affiliation_strings":["Cree Research, Inc., Durham, NC, USA","Cree Res.Inc., Durham, NC, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cree Research, Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]},{"raw_affiliation_string":"Cree Res.Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109111556","display_name":"Karen E. B. Moore","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1333370159","display_name":"Motorola (United States)","ror":"https://ror.org/01hafxd32","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Moore","raw_affiliation_strings":["Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","institution_ids":["https://openalex.org/I1333370159"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051817333","display_name":"K. Nordquist","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1333370159","display_name":"Motorola (United States)","ror":"https://ror.org/01hafxd32","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K.K. Nordquist","raw_affiliation_strings":["Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","institution_ids":["https://openalex.org/I1333370159"]}]},{"author_position":"middle","author":{"id":null,"display_name":"S. Allen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Allen","raw_affiliation_strings":["Cree Research, Inc., Durham, NC, USA","Cree Res.Inc., Durham, NC, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cree Research, Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]},{"raw_affiliation_string":"Cree Res.Inc., Durham, NC, USA","institution_ids":["https://openalex.org/I4210109581"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090324533","display_name":"C. Thero","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1333370159","display_name":"Motorola (United States)","ror":"https://ror.org/01hafxd32","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Thero","raw_affiliation_strings":["Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","institution_ids":["https://openalex.org/I1333370159"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033101197","display_name":"M. Bhatnagar","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1333370159","display_name":"Motorola (United States)","ror":"https://ror.org/01hafxd32","country_code":"US","type":"company","lineage":["https://openalex.org/I1333370159"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Bhatnagar","raw_affiliation_strings":["Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Phoenix Coiporate Research Laboratories, Motorola, Inc., Tempe, AZ, USA","institution_ids":["https://openalex.org/I1333370159"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":17.7108,"has_fulltext":false,"cited_by_count":447,"citation_normalized_percentile":{"value":0.99631653,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"43","issue":"10","first_page":"1732","last_page":"1741"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.9959999918937683},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9200000166893005},{"id":"https://openalex.org/keywords/high-power-devices","display_name":"high-power devices","score":0.7149999737739563},{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.9509999752044678},{"id":"https://openalex.org/keywords/silicon-carbide-transistors","display_name":"silicon carbide transistors","score":0.5979999899864197},{"id":"https://openalex.org/keywords/umosfet","display_name":"UMOSFET","score":0.8149999976158142},{"id":"https://openalex.org/keywords/metal-semiconductor-field-effect-transistors","display_name":"MESFET","score":0.9789999723434448},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.949999988079071},{"id":"https://openalex.org/keywords/power-density","display_name":"power density","score":0.7099999785423279}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.8818316459655762},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7600778937339783},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6828805208206177},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6283926963806152},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5885600447654724},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.5785588622093201},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5592667460441589},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5586235523223877},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.501340389251709},{"id":"https://openalex.org/C21881925","wikidata":"https://www.wikidata.org/wiki/Q3503313","display_name":"Power density","level":3,"score":0.49711874127388},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4771817922592163},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42702916264533997},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4189966022968292},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13586801290512085},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12689605355262756},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09821641445159912},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08786502480506897},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/16.536819","doi":"https://doi.org/10.1109/16.536819","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.536819","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1548675484","https://openalex.org/W1552434961","https://openalex.org/W1753600784","https://openalex.org/W1782217434","https://openalex.org/W1842335960","https://openalex.org/W1933227915","https://openalex.org/W1977920155","https://openalex.org/W1988314462","https://openalex.org/W1989732897","https://openalex.org/W1998370272","https://openalex.org/W2003829426","https://openalex.org/W2022733488","https://openalex.org/W2029315108","https://openalex.org/W2031839685","https://openalex.org/W2035956874","https://openalex.org/W2073784605","https://openalex.org/W2076122638","https://openalex.org/W2103947167","https://openalex.org/W2104535007","https://openalex.org/W2114902077","https://openalex.org/W2121604213","https://openalex.org/W2122840051","https://openalex.org/W2136111812","https://openalex.org/W2138059077","https://openalex.org/W2143165320","https://openalex.org/W2146354614","https://openalex.org/W2146363310","https://openalex.org/W2150066843","https://openalex.org/W2150108215","https://openalex.org/W2154118371","https://openalex.org/W2158821958","https://openalex.org/W2160286674","https://openalex.org/W2163811481","https://openalex.org/W2166766592","https://openalex.org/W3197160344"],"related_works":["https://openalex.org/W2318230628","https://openalex.org/W7096306998","https://openalex.org/W4407559098","https://openalex.org/W275947876","https://openalex.org/W2076838760","https://openalex.org/W4206078575","https://openalex.org/W2112535790","https://openalex.org/W2099199558","https://openalex.org/W2092874501","https://openalex.org/W2016039809"],"abstract_inverted_index":{"In":[0],"recent":[1],"years,":[2],"silicon":[3],"carbide":[4],"has":[5],"received":[6],"increased":[7],"attention":[8],"because":[9],"of":[10,20,74,93,120,124,131],"its":[11,40],"potential":[12,42],"for":[13],"high-power":[14],"devices.":[15],"The":[16,118],"unique":[17],"material":[18,39],"properties":[19],"SiC,":[21],"high":[22,26,32],"electric":[23],"breakdown":[24],"field,":[25],"saturated":[27],"electron":[28],"drift":[29],"velocity,":[30],"and":[31,111,134,137],"thermal":[33],"conductivity":[34],"are":[35,84,127],"what":[36],"give":[37],"this":[38],"tremendous":[41],"in":[43],"the":[44,90],"power":[45,76,112],"device":[46],"arena.":[47],"4H-SiC":[48,101],"Schottky":[49],"barrier":[50],"diodes":[51],"(1400":[52],"V)":[53,83],"with":[54],"forward":[55],"current":[56,91],"densities":[57],"over":[58],"700":[59],"A/cm/sup":[60],"2/":[61],"at":[62,77],"2":[63],"V":[64],"have":[65,70,87,103],"been":[66],"demonstrated.":[67],"Packaged":[68],"SITs":[69],"produced":[71],"57":[72],"W":[73],"output":[75],"500":[78],"MHz,":[79],"SiC":[80,125],"UMOSFETs":[81],"(1200":[82,96],"projected":[85],"to":[86,129,138],"15":[88],"times":[89],"density":[92],"Si":[94,133],"IGBTs":[95],"V).":[97],"Submicron":[98],"gate":[99],"length":[100],"MESFETs":[102],"achieved":[104],"f/sub":[105,108],"max/=32":[106],"GHz,":[107,110],"T/=14.0":[109],"density=2.8":[113],"W/mm":[114],"@":[115],"1.8":[116],"GHz.":[117],"performances":[119],"a":[121],"wide":[122],"variety":[123],"devices":[126,136],"compared":[128],"that":[130],"similar":[132],"GaAs":[135],"theoretically":[139],"expected":[140],"results.":[141]},"counts_by_year":[{"year":2026,"cited_by_count":14},{"year":2025,"cited_by_count":13},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":16},{"year":2021,"cited_by_count":9},{"year":2020,"cited_by_count":10},{"year":2019,"cited_by_count":16},{"year":2018,"cited_by_count":26},{"year":2017,"cited_by_count":15},{"year":2016,"cited_by_count":18},{"year":2015,"cited_by_count":21},{"year":2014,"cited_by_count":15},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":11}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}