{"id":"https://openalex.org/W2145445238","doi":"https://doi.org/10.1116/1.588434","title":"Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal\u2013oxide\u2013semiconductor capacitors","display_name":"Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal\u2013oxide\u2013semiconductor capacitors","publication_year":1996,"publication_date":"1996-01-01","ids":{"openalex":"https://openalex.org/W2145445238","doi":"https://doi.org/10.1116/1.588434","mag":"2145445238"},"language":"en","primary_location":{"id":"doi:10.1116/1.588434","doi":"https://doi.org/10.1116/1.588434","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.588434","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059383098","display_name":"Tomasz Bro\u017cek","orcid":"https://orcid.org/0000-0002-1271-6810","observed_orcids":["https://orcid.org/0000-0002-1271-6810"]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tomasz Bro\u017cek","raw_affiliation_strings":["Electrical Engineering Department, UCLA, Los Angeles, California 90095"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, UCLA, Los Angeles, California 90095","institution_ids":["https://openalex.org/I161318765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111236831","display_name":"Thuy Dao","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Thuy Dao","raw_affiliation_strings":["SEMATECH, Austin, Texas 78741"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SEMATECH, Austin, Texas 78741","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002012355","display_name":"C.R. Viswanathan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I161318765","display_name":"University of California, Los Angeles","ror":"https://ror.org/046rm7j60","country_code":"US","type":"education","lineage":["https://openalex.org/I161318765"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chand R. Viswanathan","raw_affiliation_strings":["Electrical Engineering Department, UCLA, Los Angeles, California 90095"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, UCLA, Los Angeles, California 90095","institution_ids":["https://openalex.org/I161318765"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.2773479,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"14","issue":"1","first_page":"577","last_page":"581"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.035999998450279236,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.001500000013038516,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos-capacitors","display_name":"MOS capacitors","score":0.9390000104904175},{"id":"https://openalex.org/keywords/gate-oxide-integrity","display_name":"gate oxide integrity","score":0.8539999723434448},{"id":"https://openalex.org/keywords/plasma-charging","display_name":"plasma charging","score":0.8040000200271606},{"id":"https://openalex.org/keywords/antenna-effect","display_name":"antenna effect","score":0.6359999775886536},{"id":"https://openalex.org/keywords/generation-recombination-centers","display_name":"generation-recombination centers","score":0.8330000042915344},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.7620000243186951},{"id":"https://openalex.org/keywords/interface-degradation","display_name":"interface degradation","score":0.9670000076293945},{"id":"https://openalex.org/keywords/defect-density","display_name":"defect density","score":0.6790000200271606},{"id":"https://openalex.org/keywords/thin-oxide","display_name":"thin oxide","score":0.4699999988079071}],"concepts":[{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.7073498368263245},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6876930594444275},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6769880652427673},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6395441293716431},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5819581747055054},{"id":"https://openalex.org/C2778702798","wikidata":"https://www.wikidata.org/wiki/Q2098457","display_name":"Plasma-immersion ion implantation","level":4,"score":0.5713787078857422},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5450052618980408},{"id":"https://openalex.org/C145738678","wikidata":"https://www.wikidata.org/wiki/Q4364316","display_name":"Plasma processing","level":3,"score":0.48562517762184143},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.48425790667533875},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4368841052055359},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.42497098445892334},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.41544416546821594},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27008599042892456},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2638046145439148},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.22177407145500183},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14645200967788696},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14413142204284668},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.13082203269004822},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.1261850893497467},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11123543977737427},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.10533717274665833},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.10411539673805237},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.588434","doi":"https://doi.org/10.1116/1.588434","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.588434","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1985920953","https://openalex.org/W2106893616","https://openalex.org/W2131998456","https://openalex.org/W2045052353","https://openalex.org/W2116680982","https://openalex.org/W2141097132","https://openalex.org/W2045747785","https://openalex.org/W2065159110","https://openalex.org/W1951838480","https://openalex.org/W2107168009"],"abstract_inverted_index":{"The":[0,120],"effect":[1,95],"of":[2,16,46,65,75,108,122],"a":[3,89],"chemical":[4],"downstream":[5],"etching":[6],"(CDE)":[7],"environment":[8],"on":[9],"the":[10,26,70,80,93,103,117,135],"oxide":[11,18,67,125],"integrity":[12],"and":[13,131],"electrophysical":[14],"properties":[15],"thin":[17],"metal\u2013oxide\u2013semiconductor":[19],"capacitors":[20],"was":[21,96],"investigated":[22],"with":[23],"respect":[24],"to":[25,36,41,57,98],"poly-buffered":[27],"local":[28],"oxidation":[29],"process.":[30],"CDE":[31,86,143],"plasma-related":[32],"effects":[33],"were":[34,49],"compared":[35],"that":[37,85],"caused":[38],"by":[39],"exposure":[40,110],"high-density":[42],"plasma.":[43],"Two":[44],"types":[45,107],"plasma-induced":[47],"damage":[48],"isolated":[50],"for":[51,102,142,145],"both":[52],"plasma":[53,58,109],"exposures;":[54],"one":[55],"due":[56],"charging":[59,94],"manifests":[60],"itself":[61],"through":[62],"antenna":[63],"dependence":[64],"gate":[66],"integrity,":[68,126],"while":[69],"other":[71],"results":[72],"in":[73,79,116,134],"generation":[74,115],"defects":[76],"(generation-recombination":[77],"centers)":[78],"silicon":[81,118,137],"substrate.":[82,119],"Experiments":[83],"revealed":[84],"is":[87,139],"not":[88],"completely":[90],"charging-free":[91],"process;":[92],"found":[97],"be":[99],"lower":[100,141],"than":[101,144],"plasma-immersion":[104,146],"system.":[105],"Both":[106],"may":[111],"also":[112],"cause":[113],"defect":[114,132],"level":[121],"damage,":[123],"affecting":[124],"charge":[127],"trapping,":[128],"interface":[129],"degradation,":[130],"density":[133],"near-surface":[136],"region":[138],"significantly":[140],"systems.":[147]},"counts_by_year":[],"updated_date":"2026-10-02T10:15:12.560889","created_date":"2016-06-24T00:00:00"}