{"id":"https://openalex.org/W2145227971","doi":"https://doi.org/10.1109/55.830973","title":"Graded gate VDMOSFET","display_name":"Graded gate VDMOSFET","publication_year":2000,"publication_date":"2000-04-01","ids":{"openalex":"https://openalex.org/W2145227971","doi":"https://doi.org/10.1109/55.830973","mag":"2145227971"},"language":"en","primary_location":{"id":"doi:10.1109/55.830973","doi":"https://doi.org/10.1109/55.830973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.830973","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109566708","display_name":"Shuming Xu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Shuming Xu","raw_affiliation_strings":["Institute of Microelectronics, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Singapore","institution_ids":["https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060042035","display_name":"K.P. Gan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kian Paau Can","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031026362","display_name":"Pang Dow Foo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Pang Dow Foo","raw_affiliation_strings":["Institute of Microelectronics, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Singapore","institution_ids":["https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080108490","display_name":"Yi Su","orcid":"https://orcid.org/0000-0001-5345-7184","observed_orcids":["https://orcid.org/0000-0001-5345-7184"]},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yi Su","raw_affiliation_strings":["Institute of Microelectronics, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Singapore","institution_ids":["https://openalex.org/I4210090209"]}]},{"author_position":"last","author":{"id":null,"display_name":"Yong Liu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yong Liu","raw_affiliation_strings":["Institute of Microelectronics, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Singapore","institution_ids":["https://openalex.org/I4210090209"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.297,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.82245296,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"21","issue":"4","first_page":"176","last_page":"178"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.42410001158714294,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.42410001158714294,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.2849000096321106,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.22290000319480896,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vdmosfet","display_name":"VDMOSFET","score":0.906000018119812},{"id":"https://openalex.org/keywords/thin-gate-oxide","display_name":"thin gate oxide","score":0.9089999794960022},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8640000224113464},{"id":"https://openalex.org/keywords/electric-field-crowding","display_name":"electric field crowding","score":0.8569999933242798},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.9359999895095825},{"id":"https://openalex.org/keywords/rf-power-transistors","display_name":"RF power transistors","score":0.5630000233650208}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.8610292673110962},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.847380518913269},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7216545343399048},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6998957991600037},{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.6800429224967957},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5134707093238831},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.5015733242034912},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4926050305366516},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4845084547996521},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.47824397683143616},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.47447851300239563},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46134689450263977},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.45849668979644775},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.43769371509552},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3806791305541992},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16590380668640137},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1393442153930664},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.12904763221740723},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11990430951118469},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.056030869483947754},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/55.830973","doi":"https://doi.org/10.1109/55.830973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.830973","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320698","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1964516882","https://openalex.org/W2018885798","https://openalex.org/W2083516800","https://openalex.org/W2542775189"],"related_works":["https://openalex.org/W2204913900","https://openalex.org/W2163145465","https://openalex.org/W2155429680","https://openalex.org/W1982996685","https://openalex.org/W4412671533","https://openalex.org/W4285816504","https://openalex.org/W7164337824","https://openalex.org/W1588126275","https://openalex.org/W2785450681","https://openalex.org/W1855981218"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"present":[4],"a":[5,27,40],"novel":[6],"RF":[7],"VDMOSFET":[8],"with":[9],"graded":[10],"gate":[11,19,22,30,49,52,74],"structure.":[12],"It":[13],"can":[14,44],"be":[15,33,45],"fabricated":[16],"by":[17],"regrowing":[18],"oxide":[20,31,53],"after":[21],"patterning.":[23],"This":[24,66],"structure":[25],"enables":[26],"very":[28],"thin":[29],"to":[32,57,83],"used":[34],"in":[35],"the":[36,48,51,63,68,73,77],"channel":[37,64],"region;":[38],"thus":[39],"much":[41],"high":[42],"transconductance":[43],"obtained.":[46],"At":[47],"edges,":[50],"thickness":[54],"increases":[55],"smoothly":[56],"about":[58],"three":[59],"times":[60],"that":[61],"of":[62],"region.":[65],"releases":[67],"electric":[69],"field":[70],"crowding":[71],"at":[72],"edge,":[75],"improving":[76],"breakdown":[78],"voltage":[79],"from":[80],"24":[81],"V":[82],"68":[84],"V.":[85]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}