{"id":"https://openalex.org/W2139883727","doi":"https://doi.org/10.1109/iitc.2007.382384","title":"45nm-node Interconnects with Porous SiOCH-Stacks, Tolerant of Low-Cost Packaging Applications","display_name":"45nm-node Interconnects with Porous SiOCH-Stacks, Tolerant of Low-Cost Packaging Applications","publication_year":2007,"publication_date":"2007-01-01","ids":{"openalex":"https://openalex.org/W2139883727","doi":"https://doi.org/10.1109/iitc.2007.382384","mag":"2139883727"},"language":"en","primary_location":{"id":"doi:10.1109/iitc.2007.382384","doi":"https://doi.org/10.1109/iitc.2007.382384","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iitc.2007.382384","pdf_url":null,"source":{"id":"https://openalex.org/S7407085974","display_name":"IEEE International Interconnect Technology Conference (IITC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2007 IEEE International Interconnect Technology Conferencee","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086772095","display_name":"Naoya Inoue","orcid":"https://orcid.org/0000-0002-1521-8833","observed_orcids":["https://orcid.org/0000-0002-1521-8833"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Inoue","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108511723","display_name":"Masayoshi Tagami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tagami","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079964795","display_name":"Fuminori Itoh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"F. Itoh","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H. Yamamoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Yamamoto","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113780539","display_name":"T. Takeuchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Takeuchi","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085609717","display_name":"Satoshi Saito","orcid":"https://orcid.org/0000-0002-1200-6560","observed_orcids":["https://orcid.org/0000-0002-1200-6560"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Saito","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003435520","display_name":"Naoya Furutake","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Furutake","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113761295","display_name":"M. Ueki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Ueki","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066870244","display_name":"Munehiro Tada","orcid":"https://orcid.org/0000-0002-1015-2222","observed_orcids":["https://orcid.org/0000-0002-1015-2222"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tada","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"T. Suzuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]},{"id":"https://openalex.org/I4210123203","display_name":"Sumitomo Bakelite (Japan)","ror":"https://ror.org/02kxw8q35","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210123203"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Suzuki","raw_affiliation_strings":["Electronic Device Materials Research Laboratory I, Sumitomo Bakelite Company Limited, Utsunomiya, Tochigi, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Device Materials Research Laboratory I, Sumitomo Bakelite Company Limited, Utsunomiya, Tochigi, Japan","institution_ids":["https://openalex.org/I4210123203"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084117432","display_name":"Y. Hayashi","orcid":"https://orcid.org/0000-0002-2060-1351","observed_orcids":["https://orcid.org/0000-0002-2060-1351"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Hayashi","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","NEC Corp., Sagamihara"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Sagamihara, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"NEC Corp., Sagamihara","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":8.8452,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.97982535,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"181","last_page":"183"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/45-nm-technology-node","display_name":"45 nm node","score":0.7129999995231628},{"id":"https://openalex.org/keywords/porous-sioch","display_name":"porous SiOCH","score":0.8989999890327454},{"id":"https://openalex.org/keywords/wire-bond-reliability","display_name":"wire bond reliability","score":0.7409999966621399},{"id":"https://openalex.org/keywords/adhesion-strength","display_name":"adhesion strength","score":0.6489999890327454},{"id":"https://openalex.org/keywords/flip-chip","display_name":"flip-chip packaging","score":0.6399999856948853},{"id":"https://openalex.org/keywords/plastic-ball-grid-array","display_name":"plastic ball grid array","score":0.6899999976158142},{"id":"https://openalex.org/keywords/quad-flat-package","display_name":"quad flat package","score":0.8980000019073486}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6357524394989014},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.5919430255889893},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5826303958892822},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.5712142586708069},{"id":"https://openalex.org/C132976073","wikidata":"https://www.wikidata.org/wiki/Q2991861","display_name":"Curing (chemistry)","level":2,"score":0.5606163144111633},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5540265440940857},{"id":"https://openalex.org/C6648577","wikidata":"https://www.wikidata.org/wiki/Q622669","display_name":"Porosity","level":2,"score":0.4923173189163208},{"id":"https://openalex.org/C140269135","wikidata":"https://www.wikidata.org/wiki/Q750783","display_name":"Wire bonding","level":3,"score":0.48789310455322266},{"id":"https://openalex.org/C69567186","wikidata":"https://www.wikidata.org/wiki/Q5358403","display_name":"Electronic packaging","level":2,"score":0.47824326157569885},{"id":"https://openalex.org/C2780965675","wikidata":"https://www.wikidata.org/wiki/Q145958","display_name":"Polyimide","level":3,"score":0.454316109418869},{"id":"https://openalex.org/C2984173401","wikidata":"https://www.wikidata.org/wiki/Q2914535","display_name":"Bonding strength","level":2,"score":0.42099520564079285},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.39353954792022705},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.39148569107055664},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3430637717247009},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3124757409095764},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.16465386748313904},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.12984329462051392},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1289857029914856},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11988487839698792},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iitc.2007.382384","doi":"https://doi.org/10.1109/iitc.2007.382384","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iitc.2007.382384","pdf_url":null,"source":{"id":"https://openalex.org/S7407085974","display_name":"IEEE International Interconnect Technology Conference (IITC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2007 IEEE International Interconnect Technology Conferencee","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8970999717712402,"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1955676966","https://openalex.org/W2156956624","https://openalex.org/W2543798454","https://openalex.org/W2542510468","https://openalex.org/W1923026835","https://openalex.org/W2033333156","https://openalex.org/W2005732389","https://openalex.org/W2049293970","https://openalex.org/W1989873922","https://openalex.org/W2163845380"],"abstract_inverted_index":{"The":[0],"45":[1,89],"nm-node":[2,90],"interconnect":[3],"with":[4],"porous":[5],"SiOCH-stacks":[6],"of":[7,22,42,59,62,84],"keff=2.9":[8],"is":[9],"confirmed":[10],"to":[11,25],"have":[12],"the":[13,23,26,34,39,43,46,50,54,82,85],"practical":[14],"reliability":[15,72],"in":[16,53,74],"PGBA":[17],"and":[18],"QFP.":[19],"Adhesion":[20],"strength":[21],"via-ILD":[24],"lower":[27],"SiCN":[28],"capping":[29],"layer":[30],"significantly":[31],"impacts":[32],"on":[33],"wire-bond":[35],"reliability,":[36],"but":[37],"spreading":[38],"contact":[40],"area":[41],"bonding-wire":[44],"within":[45],"fine-pitched":[47],"bonding-pad":[48],"suppresses":[49],"bonding":[51],"failures":[52],"low-k":[55,63],"stack":[56],"structures,":[57],"irrespective":[58],"additional":[60],"process":[61],"curing":[64],"or":[65],"not.":[66],"No":[67],"failure":[68],"was":[69],"detected":[70],"during":[71],"tests":[73],"PBGA":[75],"package":[76],"as":[77,79],"well":[78],"QFP,":[80],"confirming":[81],"practicality":[83],"low":[86],"keffinterconnects":[87],"for":[88],"ULSIs.":[91]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-29T09:56:32.521200","created_date":"2016-06-24T00:00:00"}