{"id":"https://openalex.org/W2139471975","doi":"https://doi.org/10.1109/irps.2011.5784559","title":"A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS","display_name":"A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS","publication_year":2011,"publication_date":"2011-04-01","ids":{"openalex":"https://openalex.org/W2139471975","doi":"https://doi.org/10.1109/irps.2011.5784559","mag":"2139471975"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2011.5784559","doi":"https://doi.org/10.1109/irps.2011.5784559","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2011.5784559","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Reliability Physics Symposium","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005172598","display_name":"Dimitris P. Ioannou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.P. Ioannou","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100643410","display_name":"Kai Zhao","orcid":"https://orcid.org/0000-0001-5328-3962","observed_orcids":["https://orcid.org/0000-0001-5328-3962"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Zhao","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":null,"display_name":"A. Bansal","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Bansal","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077091939","display_name":"B.P. Linder","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Linder","raw_affiliation_strings":["IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113572484","display_name":"Ronald Bolam","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Bolam","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068935887","display_name":"E. Cartier","orcid":"https://orcid.org/0000-0002-0226-4996","observed_orcids":["https://orcid.org/0000-0002-0226-4996"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. Cartier","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058225307","display_name":"J.-J. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.-J. Kim","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103068738","display_name":"Rahul Rao","orcid":"https://orcid.org/0000-0002-7784-7029","observed_orcids":["https://orcid.org/0000-0002-7784-7029"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Rao","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090403345","display_name":"Giuseppe La Rosa","orcid":"https://orcid.org/0000-0003-2714-3493","observed_orcids":["https://orcid.org/0000-0003-2714-3493"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. La Rosa","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Hopewell Junction, NY, USA","IBM Microelectronics, Semiconductor R&D Center, Hopewell Junction, NY USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Hopewell Junction, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Hopewell Junction, NY USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":null,"display_name":"G. Massey","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Massey","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047237929","display_name":"Mike Hauser","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Hauser","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":null,"display_name":"K. Das","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Das","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036267166","display_name":"James H. Stathis","orcid":"https://orcid.org/0000-0001-8340-2475","observed_orcids":["https://orcid.org/0000-0001-8340-2475"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.H. Stathis","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM T. J. Watson Research Center, Yorktown Heights , NY, USA#TAB#","institution_ids":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027072605","display_name":"J. Aitken","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. Aitken","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050301947","display_name":"Dinesh Badami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Badami","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110892443","display_name":"Steve Mittl","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Mittl","raw_affiliation_strings":["Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Research and Development Center, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics, Semiconductor R&D Center, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.8197,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.94477633,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"CR.1.1","last_page":"CR.1.4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8701000213623047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.8701000213623047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.026200000196695328,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.019099999219179153,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bias-temperature-instability","display_name":"bias temperature instability","score":0.9860000014305115},{"id":"https://openalex.org/keywords/threshold-voltage-degradation","display_name":"threshold voltage degradation","score":0.8920000195503235},{"id":"https://openalex.org/keywords/ac-stress","display_name":"AC stress","score":0.5849999785423279},{"id":"https://openalex.org/keywords/frequency-dependence","display_name":"frequency dependence","score":0.5870000123977661},{"id":"https://openalex.org/keywords/ring-oscillator","display_name":"ring oscillator","score":0.722000002861023},{"id":"https://openalex.org/keywords/reliability-modeling","display_name":"reliability modeling","score":0.6679999828338623}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6682103276252747},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.6620112061500549},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6153350472450256},{"id":"https://openalex.org/C104111718","wikidata":"https://www.wikidata.org/wiki/Q2153973","display_name":"Ring oscillator","level":3,"score":0.6149001717567444},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.6045690178871155},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5170736908912659},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.500709056854248},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.484089732170105},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4648987352848053},{"id":"https://openalex.org/C199822604","wikidata":"https://www.wikidata.org/wiki/Q557120","display_name":"Duty cycle","level":3,"score":0.4574739933013916},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4289625883102417},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3894411027431488},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3676639497280121},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3603839874267578},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33197447657585144},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2997399568557739},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2696988880634308},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25803375244140625},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19145387411117554},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.07135742902755737},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps.2011.5784559","doi":"https://doi.org/10.1109/irps.2011.5784559","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2011.5784559","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 International Reliability Physics Symposium","raw_type":"proceedings-article"},{"id":"pmh:oai:oasis.postech.ac.kr:2014.oak/66321","doi":null,"is_oa":false,"landing_page_url":"https://oasis.postech.ac.kr/handle/2014.oak/66321","pdf_url":null,"source":{"id":"https://openalex.org/S4306401965","display_name":"Open Access System for Information Sharing (Pohang University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I123900574","host_organization_name":"Pohang University of Science and Technology","host_organization_lineage":["https://openalex.org/I123900574"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2014990560","https://openalex.org/W2041598550","https://openalex.org/W2151118077","https://openalex.org/W2152664452"],"related_works":["https://openalex.org/W2057122426","https://openalex.org/W2173999255","https://openalex.org/W2005099211","https://openalex.org/W2044719815","https://openalex.org/W2096331283","https://openalex.org/W2015454892","https://openalex.org/W4396689070","https://openalex.org/W3171125470","https://openalex.org/W2064846529","https://openalex.org/W73589873"],"abstract_inverted_index":{"A":[0,26,110],"robust":[1],"reliability":[2],"characterization":[3],"/":[4],"modeling":[5],"approach":[6],"for":[7,142],"accurately":[8,94],"predicting":[9],"Bias":[10],"Temperature":[11],"Instability":[12],"(BTI)":[13],"induced":[14],"circuit":[15,114],"performance":[16],"degradation":[17,129],"in":[18],"High-k":[19],"Metal":[20],"Gate":[21],"(HKMG)":[22],"CMOS":[23],"is":[24,65,91,115,124],"presented.":[25],"series":[27],"of":[28],"device":[29],"level":[30],"stress":[31,60,76],"experiments":[32,61],"employing":[33],"both":[34],"AC":[35,59,75,88,146],"and":[36,144],"DC":[37,84,103],"stress/relax":[38,85,104],"BTI":[39,89,98,143,147],"measurements":[40,130],"are":[41],"undertaken":[42],"to":[43,50],"characterize":[44],"FET's":[45],"threshold":[46],"voltage":[47],"instability":[48],"response":[49],"a":[51,118,133],"dynamic":[52],"(inverter":[53],"type)":[54],"operation.":[55],"Results":[56],"from":[57],"the":[58,82,96,102,127,145],"demonstrate":[62],"that":[63,70,72,93],"VTinstability":[64],"frequency":[66,128],"independent,":[67],"an":[68],"observation":[69],"suggests":[71],"VTdegradation":[73],"under":[74],"can":[77],"be":[78],"equivalently":[79],"measured":[80],"through":[81,101],"simpler":[83],"sequence.":[86],"An":[87],"model":[90,119,148],"developed":[92,135],"captures":[95],"critical":[97],"relaxation":[99],"effect":[100],"predictions":[105],"on":[106],"duty":[107],"cycle":[108],"dependence.":[109],"Ring":[111],"Oscillator":[112],"(RO)":[113],"used":[116],"as":[117],"verification":[120],"vehicle.":[121],"Excellent":[122],"agreement":[123],"demonstrated":[125],"between":[126],"obtained":[131],"with":[132],"newly":[134],"Ultra-Fast":[136],"On-The-Fly":[137],"(OTF)":[138],"measurement":[139],"technique":[140],"optimized":[141],"based":[149],"RO":[150],"simulations.":[151]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}