{"id":"https://openalex.org/W2139283477","doi":"https://doi.org/10.1149/1.3572276","title":"Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors","display_name":"Impact of Silicon Nitride Gate Dielectric Composition on the Stability of Low Temperature Nanocrystalline Silicon Thin Film Transistors","publication_year":2011,"publication_date":"2011-04-25","ids":{"openalex":"https://openalex.org/W2139283477","doi":"https://doi.org/10.1149/1.3572276","mag":"2139283477"},"language":"en","primary_location":{"id":"doi:10.1149/1.3572276","doi":"https://doi.org/10.1149/1.3572276","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3572276","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2139283477"],"child_works_count":0,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110241475","display_name":"Mohammad R. Esmaeili-Rad","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I151746483","display_name":"University of Waterloo","ror":"https://ror.org/01aff2v68","country_code":"CA","type":"education","lineage":["https://openalex.org/I151746483"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Mohammad Esmaeili-Rad","raw_affiliation_strings":["University of Waterloo"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Waterloo","institution_ids":["https://openalex.org/I151746483"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111946804","display_name":"G. Reza Chaji","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I151746483","display_name":"University of Waterloo","ror":"https://ror.org/01aff2v68","country_code":"CA","type":"education","lineage":["https://openalex.org/I151746483"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Gholamreza Chaji","raw_affiliation_strings":["University of Waterloo"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Waterloo","institution_ids":["https://openalex.org/I151746483"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082607867","display_name":"Flora Li","orcid":"https://orcid.org/0000-0002-9367-2257","observed_orcids":["https://orcid.org/0000-0002-9367-2257"]},"institutions":[{"id":"https://openalex.org/I4210122179","display_name":"Wistron (Taiwan)","ror":"https://ror.org/02knfsk89","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210122179"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Flora Li","raw_affiliation_strings":["Polymer Vision-Wistron"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Polymer Vision-Wistron","institution_ids":["https://openalex.org/I4210122179"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102024163","display_name":"Maryam Moradi","orcid":"https://orcid.org/0000-0001-5492-8953","observed_orcids":["https://orcid.org/0000-0001-5492-8953"]},"institutions":[{"id":"https://openalex.org/I4210146856","display_name":"IGNIS Innovation (Canada)","ror":"https://ror.org/05gsw2536","country_code":"CA","type":"company","lineage":["https://openalex.org/I4210146856"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Maryam Moradi","raw_affiliation_strings":["Ignis Innovation Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ignis Innovation Inc","institution_ids":["https://openalex.org/I4210146856"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114376623","display_name":"Andrei Sazonov","orcid":"https://orcid.org/0000-0003-0974-1262","observed_orcids":["https://orcid.org/0000-0003-0974-1262"]},"institutions":[{"id":"https://openalex.org/I151746483","display_name":"University of Waterloo","ror":"https://ror.org/01aff2v68","country_code":"CA","type":"education","lineage":["https://openalex.org/I151746483"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Andrei Sazonov","raw_affiliation_strings":["University of Waterloo"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Waterloo","institution_ids":["https://openalex.org/I151746483"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053226693","display_name":"Arokia Nathan","orcid":"https://orcid.org/0000-0002-2070-8853","observed_orcids":["https://orcid.org/0000-0002-2070-8853","https://orcid.org/0000-0003-4430-6143"]},"institutions":[{"id":"https://openalex.org/I45129253","display_name":"University College London","ror":"https://ror.org/02jx3x895","country_code":"GB","type":"education","lineage":["https://openalex.org/I124357947","https://openalex.org/I45129253"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Arokia Nathan","raw_affiliation_strings":["University College London, 17-19 Gordon Street, London, WC1H0AH United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University College London, 17-19 Gordon Street, London, WC1H0AH United Kingdom","institution_ids":["https://openalex.org/I45129253"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"35","issue":"4","first_page":"73","last_page":"79"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002899999963119626,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.002099999925121665,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanocrystalline-silicon","display_name":"nanocrystalline silicon","score":0.9330000281333923},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9509999752044678},{"id":"https://openalex.org/keywords/hydrogenated-amorphous-silicon-nitride","display_name":"hydrogenated amorphous silicon nitride","score":0.8920000195503235},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.8790000081062317},{"id":"https://openalex.org/keywords/charge-trapping","display_name":"charge trapping","score":0.8989999890327454},{"id":"https://openalex.org/keywords/dielectric-stability","display_name":"dielectric stability","score":0.6470000147819519},{"id":"https://openalex.org/keywords/bottom-gate-tft","display_name":"bottom-gate TFT","score":0.6819999814033508},{"id":"https://openalex.org/keywords/low-temperature-processing","display_name":"low-temperature processing","score":0.5019999742507935}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8476713299751282},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.7291774749755859},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.7243834733963013},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.6601338386535645},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6505268812179565},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6298706531524658},{"id":"https://openalex.org/C80086925","wikidata":"https://www.wikidata.org/wiki/Q3960533","display_name":"Nanocrystalline silicon","level":5,"score":0.6212792992591858},{"id":"https://openalex.org/C140676511","wikidata":"https://www.wikidata.org/wiki/Q6964018","display_name":"Nanocrystalline material","level":2,"score":0.5924026966094971},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.509884238243103},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.49537599086761475},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4715088903903961},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.44992151856422424},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.4313734173774719},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4261263906955719},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4132283329963684},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23130851984024048},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17177054286003113},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16900944709777832},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.09460756182670593},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.08894121646881104},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.04437413811683655},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1149/1.3572276","doi":"https://doi.org/10.1149/1.3572276","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3572276","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.909.9646","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.909.9646","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://ecst.ecsdl.org/content/35/4/73.full.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320006","display_name":"Royal Society","ror":"https://ror.org/03wnrjx87"},{"id":"https://openalex.org/F4320334593","display_name":"Natural Sciences and Engineering Research Council of Canada","ror":"https://ror.org/01h531d29"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1669819412"],"related_works":["https://openalex.org/W2260056541","https://openalex.org/W2040856193","https://openalex.org/W2313777320","https://openalex.org/W2104368217","https://openalex.org/W2073449856","https://openalex.org/W568593379","https://openalex.org/W2138739002","https://openalex.org/W2084915491","https://openalex.org/W2319909015"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2,76],"the":[3,56,77,82,86,90],"stability":[4],"of":[5,20,51,68],"nanocrystalline":[6],"silicon":[7,23],"(nc-Si)":[8],"bottom":[9],"gate":[10,26,40,87],"(BG)":[11],"thin":[12],"film":[13],"transistors":[14],"(TFTs)":[15],"with":[16,42],"various":[17],"compositions":[18],"([N]/[Si])":[19],"hydrogenated":[21],"amorphous":[22],"nitride":[24],"(a-SiNx:H)":[25],"dielectric,":[27],"formed":[28],"at":[29,53],"280\u00baC.":[30],"The":[31],"shift":[32],"in":[33,85,94],"threshold":[34],"voltage":[35],"(\u0394VT)":[36],"is":[37,58,89],"larger":[38],"for":[39,66],"dielectrics":[41],"lower":[43],"[N]/[Si]":[44,67],"content.":[45],"For":[46],"example,":[47],"after":[48],"5":[49],"hours":[50],"stressing":[52],"15":[54],"V,":[55,60,62],"\u0394VT":[57],"0.3":[59],"1":[61],"and":[63,71],"12.4":[64],"V":[65],"1.3,":[69],"1.2,":[70],"1,":[72],"respectively.":[73],"Relaxation":[74],"tests":[75],"stressed":[78],"TFTs":[79],"show":[80],"that":[81],"charge":[83],"trapping":[84],"dielectric":[88],"primary":[91],"instability":[92],"mechanism":[93],"nc-Si":[95],"BG":[96],"TFTs.":[97]},"counts_by_year":[],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2016-06-24T00:00:00"}