{"id":"https://openalex.org/W2139278803","doi":"https://doi.org/10.1149/2.0111508jss","title":"Comparative Study of 4H-SiC Epitaxial Layers Grown on 4\u00b0 Off-Axis Si- and C-Face Substrates Using Bistrimethylsilylmethane Precursor","display_name":"Comparative Study of 4H-SiC Epitaxial Layers Grown on 4\u00b0 Off-Axis Si- and C-Face Substrates Using Bistrimethylsilylmethane Precursor","publication_year":2015,"publication_date":"2015-01-01","ids":{"openalex":"https://openalex.org/W2139278803","doi":"https://doi.org/10.1149/2.0111508jss","mag":"2139278803"},"language":"en","primary_location":{"id":"doi:10.1149/2.0111508jss","doi":"https://doi.org/10.1149/2.0111508jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0111508jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0111508jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/2.0111508jss/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072167472","display_name":"Hunhee Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hunhee Lee","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100330185","display_name":"Hyunwoo Kim","orcid":"https://orcid.org/0000-0001-7588-3723","observed_orcids":["https://orcid.org/0000-0001-7588-3723"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunwoo Kim","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103557314","display_name":"Han Seok Seo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210093431","display_name":"Research Institute of Industrial Science and Technology","ror":"https://ror.org/005tx0y19","country_code":"KR","type":"facility","lineage":["https://openalex.org/I4210093431"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Han Seok Seo","raw_affiliation_strings":["Research Institute of Industrial Science and Technology (RIST), Pohang 790-600, Korea","bResearch Institute of Industrial Science and Technology (RIST), Pohang 790-600, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Institute of Industrial Science and Technology (RIST), Pohang 790-600, Korea","institution_ids":["https://openalex.org/I4210093431"]},{"raw_affiliation_string":"bResearch Institute of Industrial Science and Technology (RIST), Pohang 790-600, Korea","institution_ids":["https://openalex.org/I4210093431"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101962728","display_name":"Dohyun Lee","orcid":"https://orcid.org/0000-0001-8190-9571","observed_orcids":["https://orcid.org/0000-0001-8190-9571"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dohyun Lee","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100600395","display_name":"Changhyun Kim","orcid":"https://orcid.org/0009-0006-0169-1431","observed_orcids":["https://orcid.org/0009-0006-0169-1431","https://orcid.org/0009-0007-9088-5285"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhyun Kim","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002901882","display_name":"Suhyeong Lee","orcid":"https://orcid.org/0000-0001-6996-0606","observed_orcids":["https://orcid.org/0000-0001-6996-0606"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suhyeong Lee","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017033459","display_name":"Hongjeon Kang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongjeon Kang","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011572100","display_name":"Jaeyeong Heo","orcid":"https://orcid.org/0000-0002-2602-6538","observed_orcids":["https://orcid.org/0000-0002-2602-6538","https://orcid.org/0009-0008-3965-6505"]},"institutions":[{"id":"https://openalex.org/I111277659","display_name":"Chonnam National University","ror":"https://ror.org/05kzjxq56","country_code":"KR","type":"education","lineage":["https://openalex.org/I111277659"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeyeong Heo","raw_affiliation_strings":["Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea","cDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea","institution_ids":["https://openalex.org/I111277659"]},{"raw_affiliation_string":"cDepartment of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Korea","institution_ids":["https://openalex.org/I111277659"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103015867","display_name":"Hyeong Joon Kim","orcid":"https://orcid.org/0000-0001-9492-5001","observed_orcids":["https://orcid.org/0000-0001-9492-5001"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyeong Joon Kim","raw_affiliation_strings":["Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"aDepartment of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744, Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.1399,"has_fulltext":true,"cited_by_count":10,"citation_normalized_percentile":{"value":0.50299225,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"4","issue":"8","first_page":"N89","last_page":"N95"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9869999885559082},{"id":"https://openalex.org/keywords/epitaxial-layers","display_name":"epitaxial layers","score":0.8629999756813049},{"id":"https://openalex.org/keywords/homoepitaxy","display_name":"homoepitaxy","score":0.9559999704360962},{"id":"https://openalex.org/keywords/low-pressure-chemical-vapor-deposition","display_name":"low-pressure chemical vapor deposition","score":0.9160000085830688},{"id":"https://openalex.org/keywords/defect-formation","display_name":"defect formation","score":0.6830000281333923},{"id":"https://openalex.org/keywords/surface-morphology","display_name":"surface morphology","score":0.7620000243186951},{"id":"https://openalex.org/keywords/crystallinity","display_name":"crystallinity","score":0.8830000162124634},{"id":"https://openalex.org/keywords/growth-temperature","display_name":"growth temperature","score":0.7960000038146973}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9211571216583252},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7759628295898438},{"id":"https://openalex.org/C2779304628","wikidata":"https://www.wikidata.org/wiki/Q3503480","display_name":"Face (sociological concept)","level":2,"score":0.6771240234375},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.44359761476516724},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.4128003716468811},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2919407784938812},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0830792486667633},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C144024400","wikidata":"https://www.wikidata.org/wiki/Q21201","display_name":"Sociology","level":0,"score":0.0},{"id":"https://openalex.org/C36289849","wikidata":"https://www.wikidata.org/wiki/Q34749","display_name":"Social science","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1149/2.0111508jss","doi":"https://doi.org/10.1149/2.0111508jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0111508jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0111508jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.825.7298","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.825.7298","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://jss.ecsdl.org/content/4/8/N89.full.pdf","raw_type":"text"}],"best_oa_location":{"id":"doi:10.1149/2.0111508jss","doi":"https://doi.org/10.1149/2.0111508jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0111508jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0111508jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2139278803.pdf","grobid_xml":"https://content.openalex.org/works/W2139278803.grobid-xml"},"referenced_works_count":31,"referenced_works":["https://openalex.org/W1964056382","https://openalex.org/W1966891082","https://openalex.org/W1970552411","https://openalex.org/W1977702483","https://openalex.org/W1986320163","https://openalex.org/W1991388271","https://openalex.org/W2002420182","https://openalex.org/W2008767126","https://openalex.org/W2017403056","https://openalex.org/W2021897546","https://openalex.org/W2025613255","https://openalex.org/W2025620311","https://openalex.org/W2031538112","https://openalex.org/W2037167510","https://openalex.org/W2038007086","https://openalex.org/W2044554532","https://openalex.org/W2045597494","https://openalex.org/W2048564919","https://openalex.org/W2059754010","https://openalex.org/W2059800131","https://openalex.org/W2067781569","https://openalex.org/W2076719736","https://openalex.org/W2089076027","https://openalex.org/W2093192079","https://openalex.org/W2094246053","https://openalex.org/W2105838914","https://openalex.org/W2126905289","https://openalex.org/W2150066843","https://openalex.org/W2154966242","https://openalex.org/W2167490826","https://openalex.org/W4240139632"],"related_works":["https://openalex.org/W7095149166","https://openalex.org/W1580530133","https://openalex.org/W2066952535","https://openalex.org/W2989234727","https://openalex.org/W2116294196","https://openalex.org/W2089658430","https://openalex.org/W1994871392","https://openalex.org/W2053061337","https://openalex.org/W3197412677","https://openalex.org/W1991388271"],"abstract_inverted_index":{"In":[0],"situ":[1],"H":[2,29,51],"2":[3,30,54],"etching":[4,31],"and":[5,18,33,66,79,106],"homoepitaxial":[6],"growth":[7,35,60,64],"of":[8,36,58,82,101,116],"4H-SiC":[9,37],"have":[10],"been":[11],"carried":[12],"out":[13],"on":[14,39,70,85,103,108],"4\u00b0":[15],"off-axis":[16],"Si-face":[17,105],"C-face":[19],"substrates":[20,38],"by":[21],"low-pressure":[22],"chemical":[23],"vapor":[24],"deposition.":[25],"We":[26],"systematically":[27],"analyzed":[28],"characteristics":[32],"epitaxial":[34,92],"two":[40],"different":[41,86],"polarities":[42],"using":[43],"an":[44],"organosilicon":[45],"source":[46,67,113],"material,":[47],"bistrimethylsilylmethane":[48],"(C":[49],"7":[50],"20":[52],"Si":[53],").":[55],"The":[56],"effects":[57],"the":[59,71,83,104,109],"conditions,":[61],"such":[62],"as":[63],"temperature":[65,99],"flow":[68,114],"rate":[69,115],"surface":[72],"morphology,":[73],"crystallinity,":[74],"polytype":[75],"conversion,":[76],"defect":[77],"generation,":[78],"structural":[80],"imperfection":[81],"epilayers":[84],"polar":[87],"surfaces,":[88],"were":[89,94],"investigated.":[90],"High-quality":[91],"layers":[93],"successfully":[95],"grown":[96],"at":[97],"low":[98,112],"range":[100],"1320\u20131440\u00b0C":[102],"1500\u00b0C":[107],"C-face.":[110],"A":[111],"5\u201310":[117],"sccm":[118],"was":[119],"also":[120],"preferred":[121],"to":[122],"grow":[123],"defect-free":[124],"epilayers.":[125]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2017,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}