{"id":"https://openalex.org/W2139240934","doi":"https://doi.org/10.1109/16.141228","title":"A standard-television compatible 648*487 pixel Schottky-barrier infrared CCD image sensor","display_name":"A standard-television compatible 648*487 pixel Schottky-barrier infrared CCD image sensor","publication_year":1992,"publication_date":"1992-07-01","ids":{"openalex":"https://openalex.org/W2139240934","doi":"https://doi.org/10.1109/16.141228","mag":"2139240934"},"language":"en","primary_location":{"id":"doi:10.1109/16.141228","doi":"https://doi.org/10.1109/16.141228","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.141228","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080487540","display_name":"K. Konuma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Konuma","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021074159","display_name":"Shigeru Tohyama","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Tohyama","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111460239","display_name":"Akihito Tanabe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Tanabe","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049537828","display_name":"Nobukazu Teranishi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Teranishi","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"K. Masubuchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Masubuchi","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087154845","display_name":"T\u00f4ru Sait\u00f4","orcid":"https://orcid.org/0000-0002-8388-4555","observed_orcids":["https://orcid.org/0000-0002-8388-4555"]},"institutions":[{"id":"https://openalex.org/I4405275931","display_name":"Nippon Avionics Co., Ltd. (Japan)","ror":"https://ror.org/04j3vkg19","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405275931"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Saito","raw_affiliation_strings":["Systems Division, Nippon Avionics Company Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Systems Division, Nippon Avionics Company Limited, Japan","institution_ids":["https://openalex.org/I4405275931"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006103779","display_name":"T. Muramatsu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Muramatsu","raw_affiliation_strings":["Guidance and Electro-optics Division, NEC Corporation Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guidance and Electro-optics Division, NEC Corporation Limited, Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.4044,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.80977114,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"39","issue":"7","first_page":"1633","last_page":"1637"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9901999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9901999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.009399999864399433,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/infrared-image-sensors","display_name":"infrared image sensors","score":0.9660000205039978},{"id":"https://openalex.org/keywords/charge-transfer-efficiency","display_name":"charge transfer efficiency","score":0.7149999737739563},{"id":"https://openalex.org/keywords/fill-factor","display_name":"fill factor","score":0.8849999904632568},{"id":"https://openalex.org/keywords/noise-equivalent-temperature-difference","display_name":"noise equivalent temperature difference","score":0.9549999833106995}],"concepts":[{"id":"https://openalex.org/C160633673","wikidata":"https://www.wikidata.org/wiki/Q355198","display_name":"Pixel","level":2,"score":0.6811267733573914},{"id":"https://openalex.org/C76935873","wikidata":"https://www.wikidata.org/wiki/Q209121","display_name":"Image sensor","level":2,"score":0.6536679267883301},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.6436766982078552},{"id":"https://openalex.org/C152213855","wikidata":"https://www.wikidata.org/wiki/Q189880","display_name":"Charge-coupled device","level":2,"score":0.605070948600769},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.5060998797416687},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5014519691467285},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49067938327789307},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.43989279866218567},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43528488278388977},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.4106353521347046},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35791483521461487},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.2773454785346985},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.19549086689949036},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.12382376194000244},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.09189316630363464},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/16.141228","doi":"https://doi.org/10.1109/16.141228","is_oa":false,"landing_page_url":"https://doi.org/10.1109/16.141228","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1588463743","https://openalex.org/W1978305781","https://openalex.org/W2022642684","https://openalex.org/W2064450381","https://openalex.org/W2162854660","https://openalex.org/W3121220573"],"related_works":["https://openalex.org/W1516836682","https://openalex.org/W2321413691","https://openalex.org/W2356825442","https://openalex.org/W1981703700","https://openalex.org/W1973939134","https://openalex.org/W2369678743","https://openalex.org/W2537544363","https://openalex.org/W2330772424","https://openalex.org/W1588463743","https://openalex.org/W2162854660"],"abstract_inverted_index":{"Describes":[0],"a":[1,32,40,45,53],"648*487":[2],"pixel":[3,51],"PtSi":[4],"Schottky-barrier":[5],"infrared":[6],"CCD":[7],"image":[8],"sensor.":[9],"Due":[10],"to":[11],"the":[12,15,25],"development":[13],"of":[14],"modified":[16],"inverted-LOCOS":[17],"process,":[18],"which":[19,29],"can":[20],"minimize":[21],"dead":[22],"regions,":[23],"and":[24,36,52],"two-dopant":[26],"concentration":[27],"structure,":[28],"achieves":[30],"both":[31],"large":[33],"charge":[34],"capability":[35],"high":[37],"transfer":[38],"efficiency,":[39],"40%":[41],"fill":[42],"factor":[43],"in":[44],"21-":[46],"mu":[47,49],"m*21-":[48],"m":[50],"0.1-K":[54],"noise":[55],"equivalent":[56],"temperature":[57],"difference":[58],"were":[59],"obtained.>":[60]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-13T10:08:12.033832","created_date":"2016-06-24T00:00:00"}