{"id":"https://openalex.org/W2139185745","doi":"https://doi.org/10.5370/jeet.2014.9.4.1355","title":"A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET","display_name":"A 2D Analytical Modeling of Single Halo Triple Material Surrounding Gate (SHTMSG) MOSFET","publication_year":2014,"publication_date":"2014-07-01","ids":{"openalex":"https://openalex.org/W2139185745","doi":"https://doi.org/10.5370/jeet.2014.9.4.1355","mag":"2139185745"},"language":"en","primary_location":{"id":"doi:10.5370/jeet.2014.9.4.1355","doi":"https://doi.org/10.5370/jeet.2014.9.4.1355","is_oa":true,"landing_page_url":"https://doi.org/10.5370/jeet.2014.9.4.1355","pdf_url":"http://koreascience.or.kr:80/article/JAKO201424750260364.pdf","source":{"id":"https://openalex.org/S50555290","display_name":"Journal of Electrical Engineering and Technology","issn_l":"1975-0102","issn":["1975-0102","2093-7423"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","kci-registered","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electrical Engineering and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"http://koreascience.or.kr:80/article/JAKO201424750260364.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071656904","display_name":"P. Suveetha Dhanaselvam","orcid":"https://orcid.org/0000-0001-8441-1349","observed_orcids":["https://orcid.org/0000-0001-8441-1349"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Suveetha Dhanaselvam","raw_affiliation_strings":["Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036751214","display_name":"N. B. Balamurugan","orcid":"https://orcid.org/0000-0002-0541-6123","observed_orcids":["https://orcid.org/0000-0002-0541-6123"]},"institutions":[{"id":"https://openalex.org/I21234101","display_name":"Thiagarajar College of Engineering","ror":"https://ror.org/01rgfv364","country_code":"IN","type":"education","lineage":["https://openalex.org/I21234101"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"N.B. Balamurugan","raw_affiliation_strings":["Dept. of Electronics and Communication Engineering , Thiagarajar College of Engineering , Madurai , India","Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Communication Engineering , Thiagarajar College of Engineering , Madurai , India","institution_ids":["https://openalex.org/I21234101"]},{"raw_affiliation_string":"Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015062587","display_name":"G.C. Vivek Chakaravarthi","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G.C. Vivek Chakaravarthi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"R.P. Ramesh","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R.P. Ramesh","raw_affiliation_strings":["Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103635353","display_name":"B.R. Sathish Kumar","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B.R. Sathish Kumar","raw_affiliation_strings":["Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Dept. of Electronics and Communication Engineering , Velammal College of Engg & Technology , Madurai , India","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3490,"currency":"USD","value_usd":3490},"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":11,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"9","issue":"4","first_page":"1355","last_page":"1359"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0013000000035390258,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/surface-potential","display_name":"surface potential","score":0.9200000166893005},{"id":"https://openalex.org/keywords/electric-field-distribution","display_name":"electric field distribution","score":0.8320000171661377},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.8629999756813049},{"id":"https://openalex.org/keywords/parabolic-approximation","display_name":"parabolic approximation","score":0.7509999871253967},{"id":"https://openalex.org/keywords/medici-simulation","display_name":"MEDICI simulation","score":0.5419999957084656}],"concepts":[{"id":"https://openalex.org/C184665706","wikidata":"https://www.wikidata.org/wiki/Q186310","display_name":"Halo","level":3,"score":0.8629647493362427},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8463864922523499},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.6213849782943726},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.4898626506328583},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4792906641960144},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.45187586545944214},{"id":"https://openalex.org/C167343916","wikidata":"https://www.wikidata.org/wiki/Q6888384","display_name":"Modeling and simulation","level":2,"score":0.4349902272224426},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35569798946380615},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3066081404685974},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2817596197128296},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.27036941051483154},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25652140378952026},{"id":"https://openalex.org/C44154836","wikidata":"https://www.wikidata.org/wiki/Q45045","display_name":"Simulation","level":1,"score":0.23070019483566284},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.18836656212806702},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.11048614978790283},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0875639021396637},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.07716360688209534},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07399734854698181},{"id":"https://openalex.org/C98444146","wikidata":"https://www.wikidata.org/wiki/Q318","display_name":"Galaxy","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.5370/jeet.2014.9.4.1355","doi":"https://doi.org/10.5370/jeet.2014.9.4.1355","is_oa":true,"landing_page_url":"https://doi.org/10.5370/jeet.2014.9.4.1355","pdf_url":"http://koreascience.or.kr:80/article/JAKO201424750260364.pdf","source":{"id":"https://openalex.org/S50555290","display_name":"Journal of Electrical Engineering and Technology","issn_l":"1975-0102","issn":["1975-0102","2093-7423"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","kci-registered","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electrical Engineering and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.5370/jeet.2014.9.4.1355","doi":"https://doi.org/10.5370/jeet.2014.9.4.1355","is_oa":true,"landing_page_url":"https://doi.org/10.5370/jeet.2014.9.4.1355","pdf_url":"http://koreascience.or.kr:80/article/JAKO201424750260364.pdf","source":{"id":"https://openalex.org/S50555290","display_name":"Journal of Electrical Engineering and Technology","issn_l":"1975-0102","issn":["1975-0102","2093-7423"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","kci-registered","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Electrical Engineering and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2139185745.pdf","grobid_xml":"https://content.openalex.org/works/W2139185745.grobid-xml"},"referenced_works_count":14,"referenced_works":["https://openalex.org/W1984473146","https://openalex.org/W1987585071","https://openalex.org/W2014144793","https://openalex.org/W2014742620","https://openalex.org/W2033555419","https://openalex.org/W2044425985","https://openalex.org/W2070242368","https://openalex.org/W2078471910","https://openalex.org/W2112013721","https://openalex.org/W2125737605","https://openalex.org/W2138107491","https://openalex.org/W2140111002","https://openalex.org/W2161370214","https://openalex.org/W2313359299"],"related_works":["https://openalex.org/W2011518870","https://openalex.org/W2044425985","https://openalex.org/W2322965409","https://openalex.org/W3046760492","https://openalex.org/W2020472674","https://openalex.org/W3151595016","https://openalex.org/W2334395839","https://openalex.org/W2266927256","https://openalex.org/W2975003965","https://openalex.org/W2078471910"],"abstract_inverted_index":{"In":[0],"the":[1,33,45,52,55],"proposed":[2],"work":[3],"a":[4],"2D":[5],"analytical":[6,56],"modeling":[7],"of":[8,47,54],"single":[9],"halo":[10],"Triple":[11],"material":[12],"Surrounding":[13],"Gate":[14],"(SH-TMSG)":[15],"MOSFET":[16],"is":[17,41,68],"developed.":[18],"The":[19,38],"Surface":[20],"potential":[21],"and":[22,32,51,60,66],"Electric":[23],"Field":[24],"has":[25],"been":[26],"derived":[27],"using":[28],"parabolic":[29],"approximation":[30],"method":[31],"simulation":[34,64],"results":[35,53,65],"are":[36,58],"analyzed.":[37],"essential":[39],"substantive":[40],"provided":[42],"which":[43],"elicits":[44],"deterioration":[46],"short":[48],"channel":[49],"effects":[50],"model":[57],"delineated":[59],"compared":[61],"with":[62],"MEDICI":[63],"it":[67],"well":[69],"corroborated.":[70]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}