{"id":"https://openalex.org/W2136574584","doi":"https://doi.org/10.1109/vlsit.1999.799326","title":"A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond","display_name":"A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond","publication_year":1999,"publication_date":"1999-01-01","ids":{"openalex":"https://openalex.org/W2136574584","doi":"https://doi.org/10.1109/vlsit.1999.799326","mag":"2136574584"},"language":"en","primary_location":{"id":"doi:10.1109/vlsit.1999.799326","doi":"https://doi.org/10.1109/vlsit.1999.799326","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsit.1999.799326","pdf_url":null,"source":{"id":"https://openalex.org/S4306421008","display_name":"Symposium on VLSI Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113697522","display_name":"K.N. Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K.N. Kim","raw_affiliation_strings":["Technol. Dev., Samsung Electron. Co., Yongin-City, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technol. Dev., Samsung Electron. Co., Yongin-City, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112468617","display_name":"Dong-Hwa Kwak","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"D.H. Kwak","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063915807","display_name":"Young\u2010Ha Hwang","orcid":"https://orcid.org/0000-0003-4553-1844","observed_orcids":["https://orcid.org/0000-0003-4553-1844"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y.S. Hwang","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109875404","display_name":"G.T. Jeong","orcid":"https://orcid.org/0009-0007-3534-8452","observed_orcids":["https://orcid.org/0009-0007-3534-8452"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"G.T. Jeong","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045565898","display_name":"Taeyoung Chung","orcid":"https://orcid.org/0000-0003-0514-2975","observed_orcids":["https://orcid.org/0000-0003-0514-2975"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"T.Y. Chung","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110099567","display_name":"B.J. Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B.J. Park","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Y.S. Chun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Y.S. Chun","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113292088","display_name":"J. H. Oh","orcid":"https://orcid.org/0009-0009-7040-2586","observed_orcids":["https://orcid.org/0009-0009-7040-2586"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J.H. Oh","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037373106","display_name":"Choongkeun Yoo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C.Y. Yoo","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035973349","display_name":"Byung-Ha Joo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"B.S. Joo","raw_affiliation_strings":["Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Technology Development, Memory Device Business, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.9443,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.90932663,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"33","last_page":"34"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9643999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9643999934196472,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.012400000356137753,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.01080000028014183,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"DRAM","score":0.9190000295639038},{"id":"https://openalex.org/keywords/mim-capacitors","display_name":"metal-insulator-metal capacitors","score":0.8029999732971191},{"id":"https://openalex.org/keywords/barium-strontium-titanate","display_name":"barium strontium titanate","score":0.8849999904632568},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7879999876022339},{"id":"https://openalex.org/keywords/cell-membrane-capacitance","display_name":"cell membrane capacitance","score":0.6639999747276306}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9130908846855164},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.8990195393562317},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.719278872013092},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7085169553756714},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5585903525352478},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5309543013572693},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5224684476852417},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4919604957103729},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48398470878601074},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35802310705184937},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2253100574016571},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2231571078300476},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12117743492126465},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09826263785362244},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsit.1999.799326","doi":"https://doi.org/10.1109/vlsit.1999.799326","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsit.1999.799326","pdf_url":null,"source":{"id":"https://openalex.org/S4306421008","display_name":"Symposium on VLSI Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.4943999946117401,"display_name":"Industry, innovation and infrastructure"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1948457177"],"related_works":["https://openalex.org/W7030561722","https://openalex.org/W2533622329","https://openalex.org/W2973752201","https://openalex.org/W2162442176","https://openalex.org/W2189063322","https://openalex.org/W2013750018","https://openalex.org/W1586923305","https://openalex.org/W1769566735","https://openalex.org/W1498700077","https://openalex.org/W2170514106"],"abstract_inverted_index":{"Recently,":[0],"1":[1],"Gb":[2,21],"DRAM":[3,22,139],"based":[4,32,116,124],"on":[5,33,117,125],"the":[6,69,112,135],"0.18":[7],"/spl":[8,15,51,81,104,151],"mu/m":[9,16,52,82,105,152],"technology":[10,17,29,53,83,106,140],"node":[11,18],"(generation)":[12],"and":[13,84,107],"0.15":[14,50,80,103,150],"for":[19,79,102,134],"4":[20],"have":[23,94],"been":[24,95],"successfully":[25],"demonstrated.":[26],"These":[27],"two":[28],"generations":[30],"are":[31,99,114],"MIS":[34,47],"capacitors":[35,48,146],"using":[36,72,141],"Ta/sub":[37,44],"2/O/sub":[38,45],"5/":[39,46],"dielectric.":[40],"The":[41],"extension":[42],"of":[43,111],"below":[49],"is":[54,65,77,147],"considered":[55],"to":[56,60,89],"be":[57],"difficult":[58],"due":[59],"insufficient":[61],"cell":[62],"capacitance.":[63],"It":[64],"widely":[66],"accepted":[67],"that":[68],"MIM":[70,145],"capacitor":[71,120],"high":[73,91],"dielectric":[74,92],"constant":[75],"material":[76,93],"inevitable":[78],"beyond.":[85],"Although":[86],"many":[87],"studies":[88,98,113],"use":[90],"reported,":[96],"those":[97],"not":[100],"adequate":[101],"beyond":[108],"because":[109],"most":[110],"either":[115],"a":[118,138],"simple":[119],"module":[121],"process":[122],"or":[123],"large":[126],"feature":[127],"size":[128],"design":[129],"rules.":[130],"In":[131],"this":[132],"paper,":[133],"first":[136],"time,":[137],"BaSrTiO/sub":[142],"3/":[143],"(BST)":[144],"developed":[148],"with":[149],"technology.":[153]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}