{"id":"https://openalex.org/W2136108927","doi":"https://doi.org/10.1109/tnano.2010.2041010","title":"Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET","display_name":"Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET","publication_year":2010,"publication_date":"2010-02-11","ids":{"openalex":"https://openalex.org/W2136108927","doi":"https://doi.org/10.1109/tnano.2010.2041010","mag":"2136108927"},"language":"en","primary_location":{"id":"doi:10.1109/tnano.2010.2041010","doi":"https://doi.org/10.1109/tnano.2010.2041010","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2010.2041010","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083596674","display_name":"Vita Pi\u2010Ho Hu","orcid":"https://orcid.org/0000-0002-6216-214X","observed_orcids":["https://orcid.org/0000-0002-6216-214X"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Vita Pi-Ho Hu","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103279692","display_name":"Yusheng Wu","orcid":"https://orcid.org/0000-0002-6424-0324","observed_orcids":["https://orcid.org/0000-0002-6424-0324"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Sheng Wu","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025664346","display_name":"Pin Su","orcid":"https://orcid.org/0000-0002-8213-4103","observed_orcids":["https://orcid.org/0000-0002-8213-4103"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Pin Su","raw_affiliation_strings":["Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Dept. of Electron. Eng, Nat. Chiao Tung Univ, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.4704,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.83565673,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"10","issue":"2","first_page":"325","last_page":"330"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.021199999377131462,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-integrity","display_name":"electrostatic integrity","score":0.8140000104904175},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.8650000095367432},{"id":"https://openalex.org/keywords/poisson-equation","display_name":"Poisson equation","score":0.9079999923706055},{"id":"https://openalex.org/keywords/germanium-channel","display_name":"germanium channel","score":0.7609999775886536}],"concepts":[{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.52875155210495},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3708074986934662},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.26187676191329956},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.19542670249938965}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tnano.2010.2041010","doi":"https://doi.org/10.1109/tnano.2010.2041010","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tnano.2010.2041010","pdf_url":null,"source":{"id":"https://openalex.org/S142331907","display_name":"IEEE Transactions on Nanotechnology","issn_l":"1536-125X","issn":["1536-125X","1941-0085"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nanotechnology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1523529331","https://openalex.org/W1967546858","https://openalex.org/W1997395647","https://openalex.org/W2003523863","https://openalex.org/W2007783480","https://openalex.org/W2044266783","https://openalex.org/W2045047445","https://openalex.org/W2056049645","https://openalex.org/W2059269114","https://openalex.org/W2064690483","https://openalex.org/W2071598334","https://openalex.org/W2103280819","https://openalex.org/W2106310709","https://openalex.org/W2109726417","https://openalex.org/W2540450757"],"related_works":["https://openalex.org/W2103280819","https://openalex.org/W1991949103","https://openalex.org/W2318260674","https://openalex.org/W1978435266","https://openalex.org/W2047582756","https://openalex.org/W2170950868","https://openalex.org/W3168885061","https://openalex.org/W2792326849","https://openalex.org/W3096101812","https://openalex.org/W2747545445"],"abstract_inverted_index":{"This":[0],"paper":[1],"examines":[2],"the":[3,18,32,52,67,71],"electrostatic":[4,68],"integrity":[5,69],"of":[6,21,34,51,57,70],"ultrathin-body":[7],"(UTB)":[8],"germanium-on-nothing":[9],"(GeON)":[10],"MOSFET":[11],"using":[12],"theoretically":[13],"calculated":[14],"subthreshold":[15,47],"swing":[16,48],"from":[17],"analytical":[19],"solution":[20],"Poisson's":[22],"equation.":[23],"Our":[24],"results":[25],"indicate":[26],"that":[27,50],"UTB":[28,72],"GeON":[29],"MOSFETs":[30],"with":[31],"ratio":[33],"channel":[35,39,74],"length":[36],"(Lg)":[37],"to":[38,49],"thickness":[40,61],"(Tch)":[41],"around":[42],"4":[43],"can":[44],"show":[45],"comparable":[46],"silicon-on-nothing":[53],"counterparts.":[54],"The":[55],"impact":[56],"buried":[58],"insulator":[59],"(BI)":[60],"(TBI)":[62],"and":[63],"BI":[64],"permittivity":[65],"on":[66],"germanium":[73],"devices":[75],"are":[76],"also":[77],"examined.":[78]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}