{"id":"https://openalex.org/W2133908024","doi":"https://doi.org/10.1109/vlsit.2007.4339760","title":"Gate-all-around Twin Silicon nanowire SONOS Memory","display_name":"Gate-all-around Twin Silicon nanowire SONOS Memory","publication_year":2007,"publication_date":"2007-06-01","ids":{"openalex":"https://openalex.org/W2133908024","doi":"https://doi.org/10.1109/vlsit.2007.4339760","mag":"2133908024"},"language":"en","primary_location":{"id":"doi:10.1109/vlsit.2007.4339760","doi":"https://doi.org/10.1109/vlsit.2007.4339760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsit.2007.4339760","pdf_url":null,"source":{"id":"https://openalex.org/S4306421008","display_name":"Symposium on VLSI Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2007 IEEE Symposium on VLSI Technology","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108216138","display_name":"Sung Dae Suk","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sung Dae Suk","raw_affiliation_strings":["Device Research Team, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111936031","display_name":"Kyoung Hwan Yeo","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kyoung Hwan Yeo","raw_affiliation_strings":["Device Research Team, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014921104","display_name":"Keun Hwi Cho","orcid":"https://orcid.org/0000-0002-0045-1843","observed_orcids":["https://orcid.org/0000-0002-0045-1843"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Keun Hwi Cho","raw_affiliation_strings":["Device Research Team, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100351402","display_name":"Ming Li","orcid":"https://orcid.org/0000-0002-2289-0222","observed_orcids":["https://orcid.org/0000-0002-2289-0222"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ming Li","raw_affiliation_strings":["Device Research Team, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001901303","display_name":"Yun Young Yeoh","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yun young Yeoh","raw_affiliation_strings":["Device Research Team, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059451074","display_name":"Ki\u2010Ha Hong","orcid":"https://orcid.org/0000-0001-7457-8196","observed_orcids":["https://orcid.org/0000-0001-7457-8196"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki-Ha Hong","raw_affiliation_strings":["Research and Development Center, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","Samsung Electron. Co., Yongin"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Samsung Electronics Company Limited, Yongin si, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung Electron. Co., Yongin","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Sung-Han Kim","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sung-Han Kim","raw_affiliation_strings":["MTT, Yongin si, Gyeonggi, South Korea","MTT2 Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MTT, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"MTT2 Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Young-Ho Koh","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Young-Ho Koh","raw_affiliation_strings":["PD Team, Yongin si, Gyeonggi, South Korea","PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PD Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083182271","display_name":"Sunggon Jung","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sunggon Jung","raw_affiliation_strings":["PD Team, Yongin si, Gyeonggi, South Korea","PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PD Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"WonJun Jang","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"WonJun Jang","raw_affiliation_strings":["PD Team, Yongin si, Gyeonggi, South Korea","PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PD Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"PD Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100691394","display_name":"Dong\u2010Won Kim","orcid":"https://orcid.org/0000-0002-1735-0272","observed_orcids":["https://orcid.org/0000-0002-1735-0272"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dong-Won Kim","raw_affiliation_strings":["Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046074803","display_name":"Donggun Park","orcid":"https://orcid.org/0000-0002-7207-5170","observed_orcids":["https://orcid.org/0000-0002-7207-5170"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Donggun Park","raw_affiliation_strings":["Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109150786","display_name":"Byung-Il Ryu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Byung-Il Ryu","raw_affiliation_strings":["Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Device Research Team, Yongin si, Gyeonggi, South Korea","institution_ids":[]},{"raw_affiliation_string":"Device Research Team, San 24, Nongseo-Dong, Kiheung-Ku, Yongin-City, Kyoungi-Do, 449-711, KOREA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.5316,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.98272932,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"142","last_page":"143"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7426999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7426999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1923999935388565,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.04639999940991402,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-all-around","display_name":"gate-all-around","score":0.7129999995231628},{"id":"https://openalex.org/keywords/sonos-memory","display_name":"SONOS memory","score":0.8399999737739563},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"non-volatile memory","score":0.6119999885559082},{"id":"https://openalex.org/keywords/channel-hot-electron-injection","display_name":"channel hot electron injection","score":0.9660000205039978},{"id":"https://openalex.org/keywords/hot-hole-injection","display_name":"hot hole injection","score":0.996999979019165},{"id":"https://openalex.org/keywords/program-speed","display_name":"program speed","score":0.6840000152587891},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.9760000109672546},{"id":"https://openalex.org/keywords/nanowire-diameter","display_name":"nanowire diameter","score":0.7429999709129333}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.4604751169681549},{"id":"https://openalex.org/C2986665194","wikidata":"https://www.wikidata.org/wiki/Q28324872","display_name":"Silicon nanowires","level":3,"score":0.4276394546031952},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3679664731025696},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3398342728614807},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33561259508132935},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22727900743484497},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.21322324872016907},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11098375916481018}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/vlsit.2007.4339760","doi":"https://doi.org/10.1109/vlsit.2007.4339760","is_oa":false,"landing_page_url":"https://doi.org/10.1109/vlsit.2007.4339760","pdf_url":null,"source":{"id":"https://openalex.org/S4306421008","display_name":"Symposium on VLSI Technology","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2007 IEEE Symposium on VLSI Technology","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2059873713","https://openalex.org/W2262265907"],"related_works":["https://openalex.org/W2016212714","https://openalex.org/W1997454643","https://openalex.org/W2121502809","https://openalex.org/W2135283710","https://openalex.org/W2022024884","https://openalex.org/W2136910237","https://openalex.org/W2266965339","https://openalex.org/W2170453040","https://openalex.org/W2117045833","https://openalex.org/W2586117128"],"abstract_inverted_index":{"We":[0],"have":[1],"developed":[2],"gate-all-around":[3],"(GAA)":[4],"SONOS":[5],"with":[6,56],"ultra":[7],"thin":[8],"twin":[9],"silicon":[10],"nanowires":[11],"for":[12],"the":[13,74],"first":[14],"time.":[15],"By":[16],"using":[17],"channel":[18],"hot":[19,24],"electron":[20],"injection":[21,26],"(CHEI)":[22],"and":[23,41,60,73,88],"hole":[25],"(HHI)":[27],"mechanisms,":[28],"program":[29,86],"speed":[30,43,87],"of":[31,44],"1":[32,45],"mus":[33],"at":[34,47],"Vd=":[35,48],"2":[36],"V,":[37,50],"Vg=":[38,51],"6":[39],"V":[40,53],"erase":[42],"ms":[46],"4.5":[49],"-6":[52],"are":[54,78],"achieved":[55],"2~3":[57],"nm":[58,62,68],"nanowire":[59,81],"30":[61],"gate.":[63],"Nanowire":[64],"size":[65],"below":[66],"10":[67],"dependencies":[69],"on":[70],"Vthshift":[71],"(DeltaVth)":[72],"program/erase":[75],"(P/E)":[76],"characteristics":[77],"investigated.":[79],"As":[80],"diameter":[82],"(dnw)":[83],"decreases,":[84],"faster":[85],"larger":[89],"DeltaVthare":[90],"observed.":[91]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}