{"id":"https://openalex.org/W2129664833","doi":"https://doi.org/10.1109/icicdt.2004.1309926","title":"SOI charging prevention: chip-level net tracing and diode protection","display_name":"SOI charging prevention: chip-level net tracing and diode protection","publication_year":2004,"publication_date":"2004-07-20","ids":{"openalex":"https://openalex.org/W2129664833","doi":"https://doi.org/10.1109/icicdt.2004.1309926","mag":"2129664833"},"language":"en","primary_location":{"id":"doi:10.1109/icicdt.2004.1309926","doi":"https://doi.org/10.1109/icicdt.2004.1309926","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2004.1309926","pdf_url":null,"source":{"id":"https://openalex.org/S7407086520","display_name":"IEEE International Conference on IC Design and Technology (ICICDT)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091549786","display_name":"T. Hook","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T.B. Hook","raw_affiliation_strings":["IBM Microelectronics, Essex Junction, VT, USA","[IBM Microeletronics, Essex Junction, VT, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"[IBM Microeletronics, Essex Junction, VT, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038309686","display_name":"Henry A. Bonges","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Bonges","raw_affiliation_strings":["IBM Microelectronics, Essex Junction, VT, USA","[IBM Microeletronics, Essex Junction, VT, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"[IBM Microeletronics, Essex Junction, VT, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109095929","display_name":"D. L. Harmon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Harmon","raw_affiliation_strings":["IBM Microelectronics, Essex Junction, VT, USA","[IBM Microeletronics, Essex Junction, VT, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"[IBM Microeletronics, Essex Junction, VT, USA]","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002302744","display_name":"Wing L. Lai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wing Lai","raw_affiliation_strings":["IBM Microelectronics, Essex Junction, VT, USA","[IBM Microeletronics, Essex Junction, VT, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"[IBM Microeletronics, Essex Junction, VT, USA]","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":0.4152,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.59945789,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"127","last_page":"130"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.7049999833106995},{"id":"https://openalex.org/keywords/fet","display_name":"FET","score":0.39899998903274536},{"id":"https://openalex.org/keywords/process-induced-damage","display_name":"process-induced damage","score":0.39800000190734863},{"id":"https://openalex.org/keywords/device-protection","display_name":"device protection","score":0.4449999928474426}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7333371639251709},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6479043960571289},{"id":"https://openalex.org/C138673069","wikidata":"https://www.wikidata.org/wiki/Q322229","display_name":"Tracing","level":2,"score":0.5823574066162109},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5748567581176758},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5661213397979736},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5613810420036316},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5227606296539307},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5181125998497009},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4161386787891388},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3595086336135864},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.325045645236969},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.262859582901001},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2256091833114624},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.20358332991600037},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icicdt.2004.1309926","doi":"https://doi.org/10.1109/icicdt.2004.1309926","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icicdt.2004.1309926","pdf_url":null,"source":{"id":"https://openalex.org/S7407086520","display_name":"IEEE International Conference on IC Design and Technology (ICICDT)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1975485196","https://openalex.org/W2111620315","https://openalex.org/W1796307963","https://openalex.org/W2127228155","https://openalex.org/W2011684073","https://openalex.org/W2062837555","https://openalex.org/W4380564143","https://openalex.org/W2215557943","https://openalex.org/W2148659155","https://openalex.org/W2469421243"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"we":[3],"show":[4],"that":[5,15,31],"the":[6,20],"SOI":[7],"FET":[8,17],"is":[9],"conductive":[10],"during":[11],"processing,":[12],"and":[13,22],"also":[14],"a":[16],"shunted":[18],"across":[19],"gate":[21],"source/drain":[23],"of":[24],"another":[25],"transistor":[26],"does":[27],"in":[28],"fact":[29],"protect":[30],"device":[32],"against":[33],"charging":[34],"damage.":[35]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2016-06-24T00:00:00"}