{"id":"https://openalex.org/W2129448581","doi":"https://doi.org/10.1109/4.799867","title":"A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM","display_name":"A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM","publication_year":1999,"publication_date":"1999-01-01","ids":{"openalex":"https://openalex.org/W2129448581","doi":"https://doi.org/10.1109/4.799867","mag":"2129448581"},"language":"en","primary_location":{"id":"doi:10.1109/4.799867","doi":"https://doi.org/10.1109/4.799867","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.799867","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111825827","display_name":"Hongil Yoon","orcid":"https://orcid.org/0009-0009-7748-9696","observed_orcids":["https://orcid.org/0009-0009-7748-9696"]},"institutions":[{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongil Yoon","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Memory Product & Technol. Div., Samung Electron. Co. Ltd., Kyungki, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Memory Product & Technol. Div., Samung Electron. Co. Ltd., Kyungki, South Korea","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016367586","display_name":"Gi-Won Cha","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gi-Won Cha","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091297210","display_name":"Changsik Yoo","orcid":"https://orcid.org/0000-0001-7945-5400","observed_orcids":["https://orcid.org/0000-0001-7945-5400"]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4405253860","display_name":"Integrated Systems Laboratory","ror":"https://ror.org/015f9wa43","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253860"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Changsik Yoo","raw_affiliation_strings":["Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland","Swiss Federal Institute of Technology, Zu\u0308rich"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Integrated Systems Laboratory, Swiss Federal Institute of Technology, Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4405253860"]},{"raw_affiliation_string":"Swiss Federal Institute of Technology, Zu\u0308rich","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016201515","display_name":"Nam-Jong Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Nam-Jong Kim","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003509300","display_name":"Keum-Yong Kim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Keum-Yong Kim","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113567349","display_name":"Chang Ho Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chang Ho Lee","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108381269","display_name":"Kyu-Nam Lim","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyu-Nam Lim","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009853097","display_name":"Kyuchan Lee","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyuchan Lee","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112064206","display_name":"Jun-Young Jeon","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Young Jeon","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Tae Sung Jung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae Sung Jung","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101674245","display_name":"Hongsik Jeong","orcid":"https://orcid.org/0000-0003-4367-5625","observed_orcids":["https://orcid.org/0000-0003-4367-5625"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongsik Jeong","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045565898","display_name":"Taeyoung Chung","orcid":"https://orcid.org/0000-0003-0514-2975","observed_orcids":["https://orcid.org/0000-0003-0514-2975"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae-Young Chung","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101769965","display_name":"Kinam Kim","orcid":"https://orcid.org/0000-0002-7517-588X","observed_orcids":["https://orcid.org/0000-0002-7517-588X"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kinam Kim","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5001190352","display_name":"Soo In Cho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Soo In Cho","raw_affiliation_strings":["Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","Samsung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Product and Technology Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Samsung","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.9927,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.9083154,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"34","issue":"11","first_page":"1589","last_page":"1599"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.8804000020027161,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.8804000020027161,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.09730000048875809,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.01080000028014183,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/synchronous-dram","display_name":"synchronous DRAM","score":0.9879999756813049},{"id":"https://openalex.org/keywords/high-speed-memory","display_name":"high-speed memory","score":0.6079999804496765}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9195528030395508},{"id":"https://openalex.org/C21922175","wikidata":"https://www.wikidata.org/wiki/Q3105497","display_name":"Gigabit","level":2,"score":0.6452748775482178},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.6113980412483215},{"id":"https://openalex.org/C43711488","wikidata":"https://www.wikidata.org/wiki/Q7534783","display_name":"Skew","level":2,"score":0.5346118211746216},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4823426604270935},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.430440753698349},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42746418714523315},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.37815743684768677},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3714343011379242},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35365360975265503},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33923161029815674},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2138095200061798},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0665234923362732}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/4.799867","doi":"https://doi.org/10.1109/4.799867","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.799867","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},{"id":"pmh:oai:scholarworks.unist.ac.kr:201301/27118","doi":null,"is_oa":false,"landing_page_url":"https://scholarworks.unist.ac.kr/handle/201301/27118","pdf_url":null,"source":{"id":"https://openalex.org/S4306401118","display_name":"Scholarworks@UNIST (Ulsan National Institute of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I48566637","host_organization_name":"Ulsan National Institute of Science and Technology","host_organization_lineage":["https://openalex.org/I48566637"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"ARTICLE"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.5378999710083008}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1602595558","https://openalex.org/W1652378442","https://openalex.org/W2103027715","https://openalex.org/W2106034493","https://openalex.org/W2137023023","https://openalex.org/W2151897874","https://openalex.org/W2162720403","https://openalex.org/W2788394687","https://openalex.org/W4235153794","https://openalex.org/W4249126996","https://openalex.org/W4254255131","https://openalex.org/W6680388147"],"related_works":["https://openalex.org/W1572177522","https://openalex.org/W1590801830","https://openalex.org/W2125348722","https://openalex.org/W2148690934","https://openalex.org/W1576450352","https://openalex.org/W1602595558","https://openalex.org/W4255323786","https://openalex.org/W139310291","https://openalex.org/W2527521625","https://openalex.org/W2180968463"],"abstract_inverted_index":{"A":[0],"double":[1],"data":[2],"rate":[3],"(DDR)":[4],"at":[5],"333":[6],"Mb/s/pin":[7],"is":[8,93],"achieved":[9],"for":[10],"a":[11,17,56,85],"2.5-V,":[12],"1-Gb":[13],"synchronous":[14],"DRAM":[15,90],"in":[16,33],"0.14-/spl":[18],"mu/m":[19],"CMOS":[20],"process.":[21],"The":[22],"large":[23],"density":[24],"of":[25,47],"integration":[26],"and":[27,40,45,50,62,77,88],"severe":[28],"device":[29],"fluctuation":[30],"present":[31],"challenges":[32],"dealing":[34],"with":[35,55,67],"the":[36,68],"on-chip":[37],"skews,":[38],"packaging,":[39],"processing":[41,81],"technology.":[42],"Circuit":[43],"techniques":[44],"schemes":[46],"outer":[48],"DQ":[49],"inner":[51],"control":[52],"(ODIC)":[53],"chip":[54],"non-ODIC":[57],"package,":[58],"cycle-time-adaptive":[59],"wave":[60],"pipelining,":[61],"variable-stage":[63],"analog":[64],"delay-locked":[65],"loop":[66],"three-input":[69],"phase":[70],"detector":[71],"can":[72],"provide":[73],"precise":[74],"skew":[75],"controls":[76],"increased":[78],"tolerance":[79],"to":[80],"variations.":[82],"DDR":[83],"as":[84],"viable":[86],"high-speed":[87],"low-voltage":[89],"I/O":[91],"interface":[92],"demonstrated.":[94]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}