{"id":"https://openalex.org/W2126103124","doi":"https://doi.org/10.1109/55.145053","title":"Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs","display_name":"Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs","publication_year":1992,"publication_date":"1992-05-01","ids":{"openalex":"https://openalex.org/W2126103124","doi":"https://doi.org/10.1109/55.145053","mag":"2126103124"},"language":"en","primary_location":{"id":"doi:10.1109/55.145053","doi":"https://doi.org/10.1109/55.145053","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.145053","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5042142135","display_name":"R.J.T. Bunyan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R.J.T. Bunyan","raw_affiliation_strings":["RSRE, Malvern, Worcestershire, UK","DRA Electron Div., Malvern, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RSRE, Malvern, Worcestershire, UK","institution_ids":[]},{"raw_affiliation_string":"DRA Electron Div., Malvern, UK","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055070102","display_name":"Michael J. Uren","orcid":"https://orcid.org/0000-0002-8842-0426","observed_orcids":["https://orcid.org/0000-0002-8842-0426"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M.J. Uren","raw_affiliation_strings":["RSRE, Malvern, Worcestershire, UK","DRA Electron Div., Malvern, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RSRE, Malvern, Worcestershire, UK","institution_ids":[]},{"raw_affiliation_string":"DRA Electron Div., Malvern, UK","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024724012","display_name":"J. Alderman","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I27577105","display_name":"University College Cork","ror":"https://ror.org/03265fv13","country_code":"IE","type":"education","lineage":["https://openalex.org/I27577105"]}],"countries":["IE"],"is_corresponding":false,"raw_author_name":"J.C. Alderman","raw_affiliation_strings":["National Microelectronics Research Centre, University College, Cork, Ireland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Microelectronics Research Centre, University College, Cork, Ireland","institution_ids":["https://openalex.org/I27577105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038743336","display_name":"William Eccleston","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I146655781","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96","country_code":"GB","type":"education","lineage":["https://openalex.org/I146655781"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"W. Eccleston","raw_affiliation_strings":["Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK","institution_ids":["https://openalex.org/I146655781"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":4.172,"has_fulltext":false,"cited_by_count":44,"citation_normalized_percentile":{"value":0.94197424,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"13","issue":"5","first_page":"279","last_page":"281"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9409000277519226,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9409000277519226,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.05090000107884407,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/noise-thermometry","display_name":"noise thermometry","score":0.9760000109672546},{"id":"https://openalex.org/keywords/self-heating-effect","display_name":"self-heating","score":0.8640000224113464},{"id":"https://openalex.org/keywords/submicrometer-mosfets","display_name":"submicrometer MOSFETs","score":0.906000018119812},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.843999981880188},{"id":"https://openalex.org/keywords/thin-film-soi","display_name":"thin-film SOI","score":0.7369999885559082},{"id":"https://openalex.org/keywords/mobility-degradation","display_name":"mobility degradation","score":0.6449999809265137},{"id":"https://openalex.org/keywords/velocity-saturation","display_name":"velocity saturation","score":0.6370000243186951},{"id":"https://openalex.org/keywords/field-saturation","display_name":"field saturation","score":0.531000018119812}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7932637929916382},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6000542640686035},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5992966890335083},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5698440074920654},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.551449179649353},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.5045543909072876},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4534100294113159},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4495212435722351},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41826409101486206},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39573633670806885},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.20099809765815735},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17415842413902283},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1647728681564331},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1634277105331421},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/55.145053","doi":"https://doi.org/10.1109/55.145053","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.145053","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320323","display_name":"University of Liverpool","ror":"https://ror.org/04xs57h96"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1541878386","https://openalex.org/W1592652738","https://openalex.org/W1601401487","https://openalex.org/W1975971402","https://openalex.org/W2049665502","https://openalex.org/W2053553201","https://openalex.org/W2096217353","https://openalex.org/W2126003762","https://openalex.org/W2138251270","https://openalex.org/W2145635895","https://openalex.org/W3022448274"],"related_works":["https://openalex.org/W2138251270","https://openalex.org/W1912904375","https://openalex.org/W2093857206","https://openalex.org/W2793124999","https://openalex.org/W1722684128","https://openalex.org/W2052309999","https://openalex.org/W1984410577","https://openalex.org/W1966513457","https://openalex.org/W2168467372","https://openalex.org/W2024419873"],"abstract_inverted_index":{"The":[0],"authors":[1],"report":[2],"the":[3,7,32,54,72],"direct":[4],"measurement":[5],"of":[6,23,47,53],"silicon":[8],"island":[9,34],"temperature":[10,35],"in":[11,44,67,74],"both":[12],"long":[13],"and":[14,40,57],"submicrometer":[15],"thin-film":[16],"silicon-on-insulator":[17],"(SOI)":[18],"MOSFETs":[19],"as":[20],"a":[21,45,63],"function":[22],"bias":[24],"conditions":[25],"using":[26],"noise":[27],"thermometry.":[28],"They":[29],"show":[30,61],"that":[31,41,62],"device":[33],"increases":[36],"with":[37],"drain":[38,48,55,75],"voltage":[39],"this":[42],"results":[43],"reduction":[46],"current.":[49],"Using":[50],"standard":[51],"models":[52],"current":[56,76],"velocity/field":[58],"expression,":[59],"they":[60],"thermally":[64],"induced":[65],"fall":[66],"mobility":[68],"quantitatively":[69],"accounts":[70],"for":[71],"loss":[73],"drive":[77],"observed.>":[78]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}