{"id":"https://openalex.org/W2118913894","doi":"https://doi.org/10.1109/23.340579","title":"Theoretical study of SEUs in 0.25-/spl mu/m fully-depleted CMOS/SOI technology","display_name":"Theoretical study of SEUs in 0.25-/spl mu/m fully-depleted CMOS/SOI technology","publication_year":1994,"publication_date":"1994-12-01","ids":{"openalex":"https://openalex.org/W2118913894","doi":"https://doi.org/10.1109/23.340579","mag":"2118913894"},"language":"en","primary_location":{"id":"doi:10.1109/23.340579","doi":"https://doi.org/10.1109/23.340579","is_oa":false,"landing_page_url":"https://doi.org/10.1109/23.340579","pdf_url":null,"source":{"id":"https://openalex.org/S14279044","display_name":"IEEE Transactions on Nuclear Science","issn_l":"0018-9499","issn":["0018-9499","1558-1578"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nuclear Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071777537","display_name":"Christophe Brisset","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Brisset","raw_affiliation_strings":["Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France","institution_ids":["https://openalex.org/I102197404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030326081","display_name":"Philippe Dollfus","orcid":"https://orcid.org/0000-0002-4613-7147","observed_orcids":["https://orcid.org/0000-0002-4613-7147"]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Dollfus","raw_affiliation_strings":["Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Inst. d'Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France","institution_ids":["https://openalex.org/I102197404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028078057","display_name":"O. Musseau","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"O. Musseau","raw_affiliation_strings":["CEA, Bruyeres-le-Chatel, France","Univ. Paris XI, Orsay (France). Inst. d'Electronique Fondamentale"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA, Bruyeres-le-Chatel, France","institution_ids":["https://openalex.org/I2738703131"]},{"raw_affiliation_string":"Univ. Paris XI, Orsay (France). Inst. d'Electronique Fondamentale","institution_ids":["https://openalex.org/I102197404"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034627172","display_name":"J.L. Leray","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I4210101455","display_name":"CEA DAM \u00cele-de-France","ror":"https://ror.org/00kn4eb29","country_code":"FR","type":"government","lineage":["https://openalex.org/I4210101455"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.-L. Leray","raw_affiliation_strings":["CEA, Bruyeres-le-Chatel, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CEA, Bruyeres-le-Chatel, France","institution_ids":["https://openalex.org/I2738703131","https://openalex.org/I4210101455"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5070104362","display_name":"P. Hesto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Hesto","raw_affiliation_strings":["Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","Univ. Paris XI, Orsay (France). Inst. d'Electronique Fondamentale"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d'Electronique Fondamentale, CNRS URA22 Universit\u00e9 Paris XI, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Univ. Paris XI, Orsay (France). Inst. d'Electronique Fondamentale","institution_ids":["https://openalex.org/I102197404"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.9175,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.85138518,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"41","issue":"6","first_page":"2297","last_page":"2303"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11176","display_name":"Radiation Therapy and Dosimetry","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3108","display_name":"Radiation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/single-event-upset","display_name":"single event upset","score":0.9860000014305115},{"id":"https://openalex.org/keywords/single-event-latch-up","display_name":"single event latchup","score":0.6549999713897705},{"id":"https://openalex.org/keywords/fully-depleted-soi-mosfet","display_name":"fully depleted SOI MOSFET","score":0.7319999933242798},{"id":"https://openalex.org/keywords/cmos-inverter","display_name":"CMOS inverter","score":0.7620000243186951},{"id":"https://openalex.org/keywords/linear-energy-transfer","display_name":"linear energy transfer","score":0.7879999876022339},{"id":"https://openalex.org/keywords/parasitic-bipolar-transistor","display_name":"parasitic bipolar transistor","score":0.7289999723434448},{"id":"https://openalex.org/keywords/hole-accumulation","display_name":"hole accumulation","score":0.5170000195503235},{"id":"https://openalex.org/keywords/radiation-hardening","display_name":"radiation hardening","score":0.6930000185966492},{"id":"https://openalex.org/keywords/3d-monte-carlo-simulation","display_name":"3D Monte Carlo simulation","score":0.7120000123977661},{"id":"https://openalex.org/keywords/0-25-mum-cmos","display_name":"0.25 \u03bcm CMOS","score":0.7900000214576721}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7009508013725281},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6644409894943237},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.6154978275299072},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5495010614395142},{"id":"https://openalex.org/C2778002589","wikidata":"https://www.wikidata.org/wiki/Q2406791","display_name":"Upset","level":2,"score":0.5417578220367432},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5379830598831177},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5291376709938049},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5043822526931763},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4957062005996704},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.49004900455474854},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47634032368659973},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.4447666108608246},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4210226535797119},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3870736062526703},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2235615849494934},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.16260302066802979},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16189059615135193},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.12227579951286316},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11643892526626587},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/23.340579","doi":"https://doi.org/10.1109/23.340579","is_oa":false,"landing_page_url":"https://doi.org/10.1109/23.340579","pdf_url":null,"source":{"id":"https://openalex.org/S14279044","display_name":"IEEE Transactions on Nuclear Science","issn_l":"0018-9499","issn":["0018-9499","1558-1578"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Nuclear Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W82555791","https://openalex.org/W601656892","https://openalex.org/W1590134320","https://openalex.org/W1972388030","https://openalex.org/W1972611969","https://openalex.org/W2015521278","https://openalex.org/W2016357440","https://openalex.org/W2019134416","https://openalex.org/W2023183681","https://openalex.org/W2042640145","https://openalex.org/W2043724597","https://openalex.org/W2073308468","https://openalex.org/W2109522465","https://openalex.org/W2129324605","https://openalex.org/W2129609921","https://openalex.org/W2135273807","https://openalex.org/W2142107211","https://openalex.org/W2152473107","https://openalex.org/W2161890495","https://openalex.org/W2169152622","https://openalex.org/W2542747456"],"related_works":["https://openalex.org/W2105679849","https://openalex.org/W2050317733","https://openalex.org/W2112870561","https://openalex.org/W2016333419","https://openalex.org/W1548282034","https://openalex.org/W2145284858","https://openalex.org/W2095969016","https://openalex.org/W2021790157","https://openalex.org/W2537150097","https://openalex.org/W2082350687"],"abstract_inverted_index":{"We":[0,69],"present":[1],"a":[2,71,80,126,146,185],"theoretical":[3],"study":[4],"of":[5,8,36,63,82,87,92,96,113,157,166],"the":[6,76,88,93,97,111,123,140,171,173],"behavior":[7],"basic":[9],"CMOS/SOI":[10,210],"inverter":[11],"and":[12,106],"static":[13],"memory":[14,161],"cell":[15],"struck":[16],"by":[17,56,104,155],"an":[18,61],"energetic":[19],"ion.":[20,89],"This":[21],"work":[22],"is":[23,54,152],"based":[24],"on":[25],"3D":[26],"Monte":[27],"Carlo":[28],"device":[29],"simulation.":[30],"CMOS":[31],"cells":[32],"are":[33,102,212],"made":[34],"up":[35],"ultra-thin":[37],"SOI":[38],"film":[39],"0.25":[40,207],"/spl":[41,208],"mu/m":[42,209],"MOSFETs":[43],"without":[44],"body":[45],"ties":[46],"operating":[47],"in":[48,100,122,145,170],"fully-depleted":[49],"mode.":[50],"The":[51,131,149],"ion":[52],"track":[53],"simulated":[55],"electron-hole":[57],"pairs":[58],"generation":[59],"with":[60],"energy":[62,84],"1":[64],"eV":[65],"for":[66,195,206],"each":[67],"carrier.":[68],"took":[70],"particular":[72],"care":[73],"to":[74,110,119,137,175],"quantify":[75],"radiation":[77],"effect":[78],"as":[79,197,199],"function":[81],"linear":[83],"transfer":[85],"(LET)":[86],"After":[90],"irradiation":[91],"off-state":[94],"N-MOS":[95],"inverter,":[98],"electrons":[99],"excess":[101,116,158,167],"drained-off":[103],"source":[105,136],"drain":[107],"contacts.":[108],"Due":[109],"lack":[112],"hole":[114],"contact,":[115],"holes":[117,168],"tend":[118],"remain":[120],"accumulated":[121],"channel":[124],"initiating":[125],"parasitic":[127],"bipolar":[128],"transistor":[129],"mechanism.":[130],"electron":[132],"current,":[133],"flowing":[134],"from":[135],"drain,":[138],"discharges":[139],"output":[141],"capacitor,":[142],"which":[143,183],"result":[144],"transient":[147],"upset.":[148],"recovery":[150],"time":[151],"then":[153],"controlled":[154],"recombination":[156,165],"holes.":[159],"For":[160],"cell,":[162],"even":[163],"after":[164],"stored":[169],"channel,":[172],"return":[174],"initial":[176],"logic":[177],"state":[178],"could":[179],"not":[180],"be":[181],"achieved,":[182],"constitutes":[184],"definitive":[186],"single":[187],"event":[188],"upset":[189],"(SEU).":[190],"As":[191],"this":[192],"would":[193],"occur":[194],"LET":[196],"low":[198],"3":[200],"MeV.Cm/sup":[201],"2/.Mg/sup":[202],"-1/,":[203],"hardening":[204],"techniques":[205],"devices":[211],"finally":[213],"discussed.>":[214]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}