{"id":"https://openalex.org/W2117296102","doi":"https://doi.org/10.1049/el:19880064","title":"New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration","display_name":"New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration","publication_year":1988,"publication_date":"1988-01-21","ids":{"openalex":"https://openalex.org/W2117296102","doi":"https://doi.org/10.1049/el:19880064","mag":"2117296102"},"language":"en","primary_location":{"id":"doi:10.1049/el:19880064","doi":"https://doi.org/10.1049/el:19880064","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19880064","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111755854","display_name":"F. Brillouet","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Brillouet","raw_affiliation_strings":["Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","Lab. de Bagneux/CNET (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","institution_ids":[]},{"raw_affiliation_string":"Lab. de Bagneux/CNET (France)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103197467","display_name":"E. V. K. Rao","orcid":"https://orcid.org/0000-0003-1062-7950","observed_orcids":["https://orcid.org/0000-0003-1062-7950"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"E.V.K. Rao","raw_affiliation_strings":["Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","Lab. de Bagneux/CNET (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","institution_ids":[]},{"raw_affiliation_string":"Lab. de Bagneux/CNET (France)","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021432950","display_name":"Jean Beerens","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Beerens","raw_affiliation_strings":["Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","Lab. de Bagneux/CNET (France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 196 Avenue Henri Rav\u00e9ra, Bagneux, 92220, France","institution_ids":[]},{"raw_affiliation_string":"Lab. de Bagneux/CNET (France)","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":0.4741,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.68770998,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"24","issue":"2","first_page":"97","last_page":"99"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0020000000949949026,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-current","display_name":"threshold current","score":0.5389999747276306},{"id":"https://openalex.org/keywords/zinc-diffusion","display_name":"zinc diffusion","score":0.6129999756813049},{"id":"https://openalex.org/keywords/integrated-optoelectronics","display_name":"integrated optoelectronics","score":0.5929999947547913}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8300536870956421},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7423500418663025},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7277891635894775},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.7043927311897278},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.6995190978050232},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6726897954940796},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6148433089256287},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.5845048427581787},{"id":"https://openalex.org/C154954056","wikidata":"https://www.wikidata.org/wiki/Q1604164","display_name":"Transverse plane","level":2,"score":0.5532655715942383},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5011863708496094},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.43956243991851807},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.33667024970054626},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.312982439994812},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22836869955062866},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19367077946662903},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16413089632987976},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11635491251945496},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.10829678177833557},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.04850330948829651},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19880064","doi":"https://doi.org/10.1049/el:19880064","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19880064","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2047775194","https://openalex.org/W2106249459"],"related_works":["https://openalex.org/W1988104220","https://openalex.org/W1986783622","https://openalex.org/W2130351987","https://openalex.org/W2129205477","https://openalex.org/W1998049838","https://openalex.org/W2136178562","https://openalex.org/W1982395590","https://openalex.org/W2125940978","https://openalex.org/W2066961950","https://openalex.org/W2048503416"],"abstract_inverted_index":{"A":[0,48],"transverse":[1],"junction":[2],"stripe":[3],"laser":[4],"structure":[5],"with":[6,13,59],"a":[7,40,60],"very":[8,49],"low":[9,50],"parasitic":[10,51],"capacitance,":[11],"compatible":[12],"an":[14],"entirely":[15],"planar":[16],"laser-MESFET":[17],"integration,":[18],"is":[19,57],"presented.":[20],"The":[21],"laser,":[22],"obtained":[23],"by":[24],"two":[25],"successive":[26],"n":[27],"(S)":[28],"and":[29],"p":[30],"(Zn)":[31],"diffusions":[32],"across":[33],"undoped":[34],"AlGaAs/GaAs":[35],"double":[36],"heterostructure":[37],"layers,":[38],"has":[39],"threshold":[41],"current":[42],"of":[43,65],"Ith":[44],"=":[45,54,67],"55":[46],"mA.":[47],"capacitance":[52],"Cs":[53],"0.6":[55],"pF":[56],"measured,":[58],"corresponding":[61],"rolloff":[62],"time":[63],"constant":[64],"tr":[66],"9":[68],"ps.":[69]},"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}