{"id":"https://openalex.org/W2114686995","doi":"https://doi.org/10.1109/icqr.2011.6031763","title":"Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices","display_name":"Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices","publication_year":2011,"publication_date":"2011-09-01","ids":{"openalex":"https://openalex.org/W2114686995","doi":"https://doi.org/10.1109/icqr.2011.6031763","mag":"2114686995"},"language":"en","primary_location":{"id":"doi:10.1109/icqr.2011.6031763","doi":"https://doi.org/10.1109/icqr.2011.6031763","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icqr.2011.6031763","pdf_url":null,"source":{"id":"https://openalex.org/S4306422684","display_name":"IEEE International Conference on Quality and Reliability","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Conference on Quality and Reliability","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071764641","display_name":"B. Nadji","orcid":"https://orcid.org/0000-0002-4881-0147","observed_orcids":["https://orcid.org/0000-0002-4881-0147"]},"institutions":[{"id":"https://openalex.org/I3121272148","display_name":"University of Boumerdes","ror":"https://ror.org/02dveg925","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3121272148"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"B. Nadji","raw_affiliation_strings":["Microelectronic and Microsystems Team, University of Boumerdes, Algeria","Microelectronic and Microsystems Team, Laboratory of Electrification of industrials enterprises Faculty of Hydrocarbones and Chemistry, University of Boumerdes, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronic and Microsystems Team, University of Boumerdes, Algeria","institution_ids":["https://openalex.org/I3121272148"]},{"raw_affiliation_string":"Microelectronic and Microsystems Team, Laboratory of Electrification of industrials enterprises Faculty of Hydrocarbones and Chemistry, University of Boumerdes, Algeria","institution_ids":["https://openalex.org/I3121272148"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051995256","display_name":"Hakim Tahi","orcid":"https://orcid.org/0000-0002-6191-1073","observed_orcids":["https://orcid.org/0000-0002-6191-1073"]},"institutions":[{"id":"https://openalex.org/I3121272148","display_name":"University of Boumerdes","ror":"https://ror.org/02dveg925","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3121272148"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"H. Tahi","raw_affiliation_strings":["Microelectronic and Microsystems Team, University of Boumerdes, Algeria","Microelectronic and Microsystems Team, Laboratory of Electrification of industrials enterprises Faculty of Hydrocarbones and Chemistry, University of Boumerdes, Algeria"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronic and Microsystems Team, University of Boumerdes, Algeria","institution_ids":["https://openalex.org/I3121272148"]},{"raw_affiliation_string":"Microelectronic and Microsystems Team, Laboratory of Electrification of industrials enterprises Faculty of Hydrocarbones and Chemistry, University of Boumerdes, Algeria","institution_ids":["https://openalex.org/I3121272148"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074744330","display_name":"Boualem Djezzar","orcid":"https://orcid.org/0000-0003-2051-2532","observed_orcids":["https://orcid.org/0000-0003-2051-2532"]},"institutions":[{"id":"https://openalex.org/I4210102186","display_name":"Centre de D\u00e9veloppement des Technologies Avanc\u00e9es","ror":"https://ror.org/01ay87255","country_code":"DZ","type":"facility","lineage":["https://openalex.org/I4210102186"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"B. Djezzar","raw_affiliation_strings":["Microelectronics and Nanotechnology Division, Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA), Baba Hassen, Algiers","Microelectronics and Nanotechnology Division, Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA), 20, Ao\u00dbt 1956, BP: 17, Baba Hassen, Algiers 16303"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics and Nanotechnology Division, Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA), Baba Hassen, Algiers","institution_ids":["https://openalex.org/I4210102186"]},{"raw_affiliation_string":"Microelectronics and Nanotechnology Division, Centre de D\u00e9veloppement des Technologies Avanc\u00e9es (CDTA), 20, Ao\u00dbt 1956, BP: 17, Baba Hassen, Algiers 16303","institution_ids":["https://openalex.org/I4210102186"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8473,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.63415957,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"469","last_page":"472"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9814000129699707,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9814000129699707,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.008299999870359898,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/radiation-induced-traps","display_name":"radiation-induced traps","score":0.9900000095367432},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.871999979019165},{"id":"https://openalex.org/keywords/border-traps","display_name":"border traps","score":0.7480000257492065},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.9909999966621399},{"id":"https://openalex.org/keywords/oxide-traps","display_name":"oxide traps","score":0.9769999980926514},{"id":"https://openalex.org/keywords/charge-pumping","display_name":"charge pumping","score":0.953000009059906},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.8410000205039978},{"id":"https://openalex.org/keywords/nmos-transistors","display_name":"NMOS transistors","score":0.9990000128746033}],"concepts":[{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4768194556236267},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.37160950899124146},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36340463161468506},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.34683698415756226},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34321510791778564},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25896912813186646},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.18344959616661072},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.10421490669250488},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09233686327934265}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icqr.2011.6031763","doi":"https://doi.org/10.1109/icqr.2011.6031763","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icqr.2011.6031763","pdf_url":null,"source":{"id":"https://openalex.org/S4306422684","display_name":"IEEE International Conference on Quality and Reliability","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International Conference on Quality and Reliability","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967812604","https://openalex.org/W2001063008","https://openalex.org/W2002765787","https://openalex.org/W2051400932","https://openalex.org/W2057486448","https://openalex.org/W2063011696","https://openalex.org/W2130809576","https://openalex.org/W2158007840","https://openalex.org/W2164127122","https://openalex.org/W3147289055","https://openalex.org/W4253360246"],"related_works":["https://openalex.org/W2096112394","https://openalex.org/W2158262830","https://openalex.org/W2074286565","https://openalex.org/W2118565108","https://openalex.org/W2036735117","https://openalex.org/W4252228817","https://openalex.org/W1549448055","https://openalex.org/W4253360246","https://openalex.org/W2125569226","https://openalex.org/W2130809576"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"propose":[4],"a":[5],"simple":[6],"and":[7,17,28,38,71,99,115,121,135,152,162],"fast":[8],"method":[9,22,117,129,145],"to":[10,32,80,124],"estimate":[11],"the":[12,34,43,52,69,82,88,91,109,127,147],"radiation-induced":[13,35,44],"traps":[14,151,159],"in":[15,90],"P":[16,161],"N-MOS":[18,163],"transistors":[19,78,164],"independently.":[20],"This":[21],"is":[23,103,130,140],"based":[24],"on":[25,105],"standard":[26,97],"current-voltage":[27],"Charge":[29],"Pumping":[30],"(I(V)-CP)":[31],"separate":[33],"border-traps":[36],"(\u0394Nbt)":[37],"true":[39],"interface-traps":[40],"(\u0394Nit),":[41],"where":[42],"oxide-traps":[45],"(\u0394Not)":[46],"are":[47,66],"extracted":[48],"classically":[49],"by":[50,87,96],"measuring":[51],"threshold":[53],"voltage":[54,59],"(\u0394Vth)":[55],"or":[56],"Mid-Gap":[57],"(\u0394Vmg)":[58],"shift.":[60],"The":[61],"charge":[62],"pumping":[63],"(CP)":[64],"curves":[65],"measured":[67],"using":[68,113],"rise":[70],"fall":[72],"saw-tooth":[73],"signal":[74],"for":[75,146,160],"N-and":[76],"P-MOS":[77],"respectively,":[79],"minimize":[81],"border-trap":[83],"estimation":[84],"error":[85],"caused":[86],"difference":[89],"energy":[92],"band":[93],"gap":[94],"scanned":[95],"I(V)":[98],"CP":[100],"techniques.":[101],"Emphasis":[102],"made":[104],"critical":[106],"comparison":[107],"between":[108],"radiation":[110],"induced":[111],"\u0394Nbtextracted":[112],"I(V)-CP":[114,128],"classical":[116],"such":[118],"as":[119],"OTCP":[120,134,144],"DTBT.":[122],"According":[123],"experimental":[125],"data,":[126],"more":[131,141],"accurate":[132],"than":[133,143],"DTBT":[136],"methods,":[137],"since":[138],"it":[139,153],"sensitive":[142],"extraction":[148],"of":[149,158],"border":[150],"can":[154],"gives":[155],"all":[156],"kinds":[157],"separately.":[165]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2014,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}