{"id":"https://openalex.org/W2114668255","doi":"https://doi.org/10.1109/mwsym.2004.1339014","title":"Thermal resistance calculation of AlGaN/GaN on SiC devices","display_name":"Thermal resistance calculation of AlGaN/GaN on SiC devices","publication_year":2004,"publication_date":"2004-10-19","ids":{"openalex":"https://openalex.org/W2114668255","doi":"https://doi.org/10.1109/mwsym.2004.1339014","mag":"2114668255"},"language":"en","primary_location":{"id":"doi:10.1109/mwsym.2004.1339014","doi":"https://doi.org/10.1109/mwsym.2004.1339014","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwsym.2004.1339014","pdf_url":null,"source":{"id":"https://openalex.org/S4210185519","display_name":"IEEE MTT-S International Microwave Symposium digest","issn_l":"0149-645X","issn":["0149-645X","2576-7216"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020868584","display_name":"Ali M. Darwish","orcid":"https://orcid.org/0000-0001-6245-4604","observed_orcids":["https://orcid.org/0000-0001-6245-4604","https://orcid.org/0000-0003-0514-2756"]},"institutions":[{"id":"https://openalex.org/I166416128","display_name":"DEVCOM Army Research Laboratory","ror":"https://ror.org/011hc8f90","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.M. Darwish","raw_affiliation_strings":["Army Research Laboratory, Adelphi, MD, USA","Army Research Labs, Adelphi, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Army Research Laboratory, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]},{"raw_affiliation_string":"Army Research Labs, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019003421","display_name":"Andrew J. Bayba","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I166416128","display_name":"DEVCOM Army Research Laboratory","ror":"https://ror.org/011hc8f90","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Bayba","raw_affiliation_strings":["Army Research Laboratory, Adelphi, MD, USA","Army Research Labs, Adelphi, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Army Research Laboratory, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]},{"raw_affiliation_string":"Army Research Labs, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113567173","display_name":"H. Alfred Hung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I166416128","display_name":"DEVCOM Army Research Laboratory","ror":"https://ror.org/011hc8f90","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.A. Hung","raw_affiliation_strings":["Army Research Laboratory, Adelphi, MD, USA","Army Research Labs, Adelphi, MD, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Army Research Laboratory, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]},{"raw_affiliation_string":"Army Research Labs, Adelphi, MD, USA","institution_ids":["https://openalex.org/I166416128"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I166416128"],"apc_list":null,"apc_paid":null,"fwci":5.4726,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.95205479,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"2039","last_page":"2042"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.6089000105857849,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.6089000105857849,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.3905999958515167,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thermal-resistance","display_name":"thermal resistance","score":0.9810000061988831},{"id":"https://openalex.org/keywords/algan-gan-high-electron-mobility-transistors","display_name":"AlGaN/GaN HEMT","score":0.847000002861023},{"id":"https://openalex.org/keywords/silicon-carbide-substrate","display_name":"SiC substrate","score":0.7459999918937683},{"id":"https://openalex.org/keywords/closed-form-model","display_name":"closed-form model","score":0.7279999852180481},{"id":"https://openalex.org/keywords/power-dissipation","display_name":"power dissipation","score":0.4339999854564667},{"id":"https://openalex.org/keywords/high-electron-mobility-transistors","display_name":"high electron mobility transistors","score":0.7089999914169312}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7625632286071777},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6871947050094604},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.675923764705658},{"id":"https://openalex.org/C137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","level":3,"score":0.6458686590194702},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.6440019011497498},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5456493496894836},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5075927972793579},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.21179434657096863},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.13839170336723328},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12959977984428406},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.060702353715896606}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/mwsym.2004.1339014","doi":"https://doi.org/10.1109/mwsym.2004.1339014","is_oa":false,"landing_page_url":"https://doi.org/10.1109/mwsym.2004.1339014","pdf_url":null,"source":{"id":"https://openalex.org/S4210185519","display_name":"IEEE MTT-S International Microwave Symposium digest","issn_l":"0149-645X","issn":["0149-645X","2576-7216"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1971865152","https://openalex.org/W1980867269","https://openalex.org/W2094412984","https://openalex.org/W2103125572"],"related_works":["https://openalex.org/W2131220540","https://openalex.org/W1973375152","https://openalex.org/W2034078919","https://openalex.org/W4308583238","https://openalex.org/W2532176618","https://openalex.org/W2034344205","https://openalex.org/W2070890031","https://openalex.org/W2035805043","https://openalex.org/W7100741441","https://openalex.org/W1991654529"],"abstract_inverted_index":{"We":[0],"present":[1],"an":[2],"original,":[3],"accurate,":[4],"closed-form":[5],"expression":[6],"for":[7,50],"the":[8,23,30,45],"thermal":[9],"resistance":[10],"of":[11,25,47],"multifingers":[12],"AlGaN/GaN":[13],"on":[14],"SiC":[15,28],"FET":[16],"devices.":[17,53],"The":[18,36,62],"model":[19,63],"takes":[20],"into":[21],"account":[22],"thickness":[24],"GaN":[26],"and":[27,34],"layers,":[29],"gate":[31],"pitch,":[32],"length,":[33],"width.":[35],"model's":[37],"validity":[38],"is":[39,58,64],"verified":[40],"by":[41],"comparing":[42],"it":[43],"with":[44,67],"results":[46],"numerical":[48],"simulations":[49],"many":[51],"different":[52],"Very":[54],"close":[55],"(1-2%)":[56],"agreement":[57],"observed":[59],"in":[60],"general.":[61],"also":[65],"compared":[66],"experimental":[68],"observations.":[69]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}