{"id":"https://openalex.org/W2114285461","doi":"https://doi.org/10.1109/ted.2012.2191410","title":"Planar GeOI TFET Performance Improvement With Back Biasing","display_name":"Planar GeOI TFET Performance Improvement With Back Biasing","publication_year":2012,"publication_date":"2012-04-20","ids":{"openalex":"https://openalex.org/W2114285461","doi":"https://doi.org/10.1109/ted.2012.2191410","mag":"2114285461"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2012.2191410","doi":"https://doi.org/10.1109/ted.2012.2191410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2012.2191410","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058880974","display_name":"Peter Matheu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peter Matheu","raw_affiliation_strings":["Applied Science and Technology Graduate Program, University of California, Berkeley, CA, USA","Appl. Sci. & Technol. Grad. Program, Univ. of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Science and Technology Graduate Program, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"Appl. Sci. & Technol. Grad. Program, Univ. of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111503389","display_name":"Byron Ho","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Byron Ho","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023879991","display_name":"Zachery A. Jacobson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zachery A. Jacobson","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063366384","display_name":"Tsu\u2010Jae King","orcid":"https://orcid.org/0000-0002-1221-2540","observed_orcids":["https://orcid.org/0000-0002-1221-2540"]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tsu-Jae King Liu","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"[Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA]","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.0003,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.76857543,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"59","issue":"6","first_page":"1629","last_page":"1635"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0019000000320374966,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/germanium-on-insulator","display_name":"germanium-on-insulator","score":0.875},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"tunnel field-effect transistor","score":0.9210000038146973},{"id":"https://openalex.org/keywords/back-gate-bias","display_name":"back-gate bias","score":0.8330000042915344},{"id":"https://openalex.org/keywords/reverse-bias","display_name":"reverse bias","score":0.5690000057220459},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.859000027179718},{"id":"https://openalex.org/keywords/low-voltage-operation","display_name":"low-voltage operation","score":0.7429999709129333},{"id":"https://openalex.org/keywords/planar-device-structure","display_name":"planar device structure","score":0.5019999742507935}],"concepts":[{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.6675039529800415},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6316932439804077},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.4241287410259247},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38254302740097046},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36561548709869385},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.32886338233947754},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3115262985229492},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2796246409416199},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1885945200920105},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14893481135368347},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0804910659790039},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.07587948441505432}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ted.2012.2191410","doi":"https://doi.org/10.1109/ted.2012.2191410","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2012.2191410","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1983050747","https://openalex.org/W1989683911","https://openalex.org/W1991353080","https://openalex.org/W2038267194","https://openalex.org/W2057693801","https://openalex.org/W2062509156","https://openalex.org/W2082052072","https://openalex.org/W2085691004","https://openalex.org/W2102913584","https://openalex.org/W2123643270","https://openalex.org/W2135475228","https://openalex.org/W2143451736","https://openalex.org/W2165877808","https://openalex.org/W3147289055","https://openalex.org/W3197160344","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2057693801","https://openalex.org/W2041312107","https://openalex.org/W2990386937","https://openalex.org/W2545148390","https://openalex.org/W3014757674","https://openalex.org/W4385079242","https://openalex.org/W2789877271","https://openalex.org/W2023578107","https://openalex.org/W3049569545","https://openalex.org/W4404642318"],"abstract_inverted_index":{"Reverse":[0],"back":[1,42],"biasing":[2],"of":[3,19,27,41],"a":[4],"planar":[5],"germanium-on-insulator":[6],"tunneling":[7],"field-effect":[8],"transistor":[9],"provides":[10],"for":[11,21],"significant":[12],"improvement":[13],"inION/IOFF,":[14],"by":[15],"over":[16],"an":[17],"order":[18],"magnitude":[20],"0.25":[22],"V":[23],"operating":[24],"voltage.":[25],"Optimization":[26],"the":[28,39],"gate-to-source":[29],"overlap":[30],"and":[31],"source":[32],"doping":[33],"gradient":[34],"is":[35],"key":[36],"to":[37],"maximizing":[38],"benefit":[40],"biasing.":[43]},"counts_by_year":[{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}