{"id":"https://openalex.org/W2113604576","doi":"https://doi.org/10.1109/55.847375","title":"A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices","display_name":"A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices","publication_year":2000,"publication_date":"2000-07-01","ids":{"openalex":"https://openalex.org/W2113604576","doi":"https://doi.org/10.1109/55.847375","mag":"2113604576"},"language":"en","primary_location":{"id":"doi:10.1109/55.847375","doi":"https://doi.org/10.1109/55.847375","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.847375","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055890701","display_name":"Wen-Chau Liu","orcid":"https://orcid.org/0000-0002-8037-3290","observed_orcids":["https://orcid.org/0000-0002-8037-3290"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Chau Liu","raw_affiliation_strings":["Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","[Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan]"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan]","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108393932","display_name":"Kong-Beng Thei","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Kong-Beng Thei","raw_affiliation_strings":["Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044814575","display_name":"Wei-Chou Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wei-Chou Wang","raw_affiliation_strings":["Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110257723","display_name":"Hsi-Jen Pan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Hsi-Jen Pan","raw_affiliation_strings":["Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111855569","display_name":"Shou-Gwo Wuu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shou-Gwo Wuu","raw_affiliation_strings":["R&D Department, Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Department, Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111972608","display_name":"Ming-Ta Lei","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210120917","display_name":"Taiwan Semiconductor Manufacturing Company (Taiwan)","ror":"https://ror.org/02wx79d08","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210120917"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Ta Lei","raw_affiliation_strings":["R&D Department, Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"R&D Department, Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210120917"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013887672","display_name":"Chung-Shu Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chung-Shu Wang","raw_affiliation_strings":["Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departmentof Electrical Engineering, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109994138","display_name":"Shiou\u2010Ying Cheng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I115980683","display_name":"Asia Eastern University of Science and Technology","ror":"https://ror.org/016xz2m71","country_code":"TW","type":"education","lineage":["https://openalex.org/I115980683"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shiou-Ying Cheng","raw_affiliation_strings":["Department of Electrical Engineering, Oriental Institute of Technology, Taipei, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Oriental Institute of Technology, Taipei, Taiwan","institution_ids":["https://openalex.org/I115980683"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.4142,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.80500317,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"21","issue":"7","first_page":"344","last_page":"346"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8568999767303467,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8568999767303467,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0763000026345253,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.05570000037550926,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-temperature-chemical-vapor-deposition","display_name":"low-temperature chemical vapor deposition","score":0.6660000085830688},{"id":"https://openalex.org/keywords/junction-leakage-current","display_name":"junction leakage current","score":0.949999988079071},{"id":"https://openalex.org/keywords/shallow-trench-isolation","display_name":"shallow trench isolation","score":0.9570000171661377},{"id":"https://openalex.org/keywords/process-window","display_name":"process window","score":0.8009999990463257}],"concepts":[{"id":"https://openalex.org/C173118649","wikidata":"https://www.wikidata.org/wiki/Q1588937","display_name":"Salicide","level":4,"score":0.9626315236091614},{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.789986252784729},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.760871410369873},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6463357210159302},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5858429670333862},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5630945563316345},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5191270709037781},{"id":"https://openalex.org/C180088628","wikidata":"https://www.wikidata.org/wiki/Q1069404","display_name":"Chemical-mechanical planarization","level":3,"score":0.4583553373813629},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.45186856389045715},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2966172397136688},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2757747769355774},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2721560001373291},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.252515971660614},{"id":"https://openalex.org/C2780901251","wikidata":"https://www.wikidata.org/wiki/Q426473","display_name":"Silicide","level":3,"score":0.24695998430252075},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/55.847375","doi":"https://doi.org/10.1109/55.847375","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.847375","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1783143159","https://openalex.org/W1964674969","https://openalex.org/W2022305193","https://openalex.org/W2065064986","https://openalex.org/W2086748065","https://openalex.org/W2136263803","https://openalex.org/W2149817745","https://openalex.org/W2535084046","https://openalex.org/W2537258389","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2063728038","https://openalex.org/W1991736170","https://openalex.org/W2016719060","https://openalex.org/W2097512395","https://openalex.org/W2113730111","https://openalex.org/W3179069306","https://openalex.org/W2537334104","https://openalex.org/W1527517264","https://openalex.org/W610451274","https://openalex.org/W1826722236"],"abstract_inverted_index":{"We":[0],"demonstrate":[1],"a":[2],"new":[3],"and":[4,37,42,60,95,105],"improved":[5],"borderless":[6],"contact":[7],"(BLC)":[8],"Ti-salicide":[9],"process":[10,86],"for":[11],"the":[12,32,38,53,66,78,91,101,107],"fabrication":[13],"of":[14,80],"sub-quarter":[15],"micron":[16],"CMOS":[17],"devices.":[18],"A":[19],"low-temperature":[20],"chemical":[21],"vapor":[22],"deposition":[23,97],"(CVD)":[24],"SiO/sub":[25],"x/N/sub":[26],"y/":[27],"film":[28],"to":[29],"act":[30],"as":[31],"selective":[33],"etching":[34,76],"stop":[35],"layer":[36],"additional":[39,57],"n/sup":[40,58],"+/":[41,44,59,62],"p/sup":[43,61],"source-drain":[45],"double":[46],"implant":[47],"structure":[48],"(DIS)":[49],"are":[50],"employed":[51,92],"in":[52],"studied":[54],"device.":[55],"The":[56,85],"DIS":[63],"can":[64,99],"reduce":[65],"junction":[67],"leakage":[68],"current,":[69],"which":[70],"is":[71,88],"usually":[72],"enhanced":[73],"by":[74],"BLC":[75],"near":[77],"edge":[79],"shallow":[81],"trench":[82],"isolation":[83],"(STI).":[84],"window":[87],"enlarged.":[89],"Furthermore,":[90],"low-thermal":[93],"oxynitride":[94],"high":[96],"rate":[98],"improve":[100],"salicide":[102,108],"thermal":[103],"stability":[104],"avoid":[106],"agglomeration.":[109]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}