{"id":"https://openalex.org/W2109329993","doi":"https://doi.org/10.1109/led.2010.2043496","title":"Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices","display_name":"Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices","publication_year":2010,"publication_date":"2010-03-30","ids":{"openalex":"https://openalex.org/W2109329993","doi":"https://doi.org/10.1109/led.2010.2043496","mag":"2109329993"},"language":"en","primary_location":{"id":"doi:10.1109/led.2010.2043496","doi":"https://doi.org/10.1109/led.2010.2043496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2010.2043496","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://doi.org/10.25405/ncl.34115811","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111541311","display_name":"R. Agaiby","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210089806","display_name":"Max Planck Institute of Microstructure Physics","ror":"https://ror.org/0095xwr23","country_code":"DE","type":"facility","lineage":["https://openalex.org/I149899117","https://openalex.org/I4210089806"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Rouzet M B Agaiby","raw_affiliation_strings":["Max Planck Institute for Microstructure Physics, Halle, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Max Planck Institute for Microstructure Physics, Halle, Germany","institution_ids":["https://openalex.org/I4210089806"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110509519","display_name":"Sarah H. Olsen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I84884186","display_name":"Newcastle University","ror":"https://ror.org/01kj2bm70","country_code":"GB","type":"education","lineage":["https://openalex.org/I84884186"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Sarah H Olsen","raw_affiliation_strings":["School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK","institution_ids":["https://openalex.org/I84884186"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075183384","display_name":"Geert Eneman","orcid":"https://orcid.org/0000-0002-5849-3384","observed_orcids":["https://orcid.org/0000-0002-5849-3384"]},"institutions":[{"id":"https://openalex.org/I2802067006","display_name":"Research Foundation - Flanders","ror":"https://ror.org/03qtxy027","country_code":"BE","type":"government","lineage":["https://openalex.org/I2802067006"]},{"id":"https://openalex.org/I4210114974","display_name":"IMEC","ror":"https://ror.org/02kcbn207","country_code":"BE","type":"nonprofit","lineage":["https://openalex.org/I4210114974"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Geert Eneman","raw_affiliation_strings":["Department of Electrical Engineering, IMEC, Leuven, Belgium","FWO Vlaanderen, Brussels, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, IMEC, Leuven, Belgium","institution_ids":["https://openalex.org/I4210114974"]},{"raw_affiliation_string":"FWO Vlaanderen, Brussels, Belgium","institution_ids":["https://openalex.org/I2802067006"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030275438","display_name":"Eddy Roger Simoen","orcid":"https://orcid.org/0000-0002-5218-4046","observed_orcids":["https://orcid.org/0000-0002-5218-4046"]},"institutions":[{"id":"https://openalex.org/I84884186","display_name":"Newcastle University","ror":"https://ror.org/01kj2bm70","country_code":"GB","type":"education","lineage":["https://openalex.org/I84884186"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Eddy Simoen","raw_affiliation_strings":["School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK","institution_ids":["https://openalex.org/I84884186"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083023348","display_name":"E. Augendre","orcid":"https://orcid.org/0000-0002-8599-7297","observed_orcids":["https://orcid.org/0000-0002-8599-7297"]},"institutions":[{"id":"https://openalex.org/I84884186","display_name":"Newcastle University","ror":"https://ror.org/01kj2bm70","country_code":"GB","type":"education","lineage":["https://openalex.org/I84884186"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Emmanuel Augendre","raw_affiliation_strings":["School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK","institution_ids":["https://openalex.org/I84884186"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5018156765","display_name":"Anthony G. O'Neill","orcid":"https://orcid.org/0000-0002-1141-2161","observed_orcids":["https://orcid.org/0000-0002-1141-2161"]},"institutions":[{"id":"https://openalex.org/I84884186","display_name":"Newcastle University","ror":"https://ror.org/01kj2bm70","country_code":"GB","type":"education","lineage":["https://openalex.org/I84884186"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Anthony G O'Neill","raw_affiliation_strings":["School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical, Electronic and Computer Engineering, University of Newcastle, Newcastle-upon-Tyne, UK","institution_ids":["https://openalex.org/I84884186"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":95},"biblio":{"volume":"31","issue":"5","first_page":"419","last_page":"421"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9193999767303467,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9193999767303467,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.06849999725818634,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.001500000013038516,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/strain-measurement","display_name":"strain measurement","score":0.6420000195503235},{"id":"https://openalex.org/keywords/uv-raman-spectroscopy","display_name":"UV Raman spectroscopy","score":0.8809999823570251},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.8429999947547913},{"id":"https://openalex.org/keywords/strained-silicon","display_name":"strained silicon","score":0.6759999990463257},{"id":"https://openalex.org/keywords/long-channel-transistors","display_name":"long-channel transistors","score":0.9200000166893005},{"id":"https://openalex.org/keywords/short-channel-transistors","display_name":"short-channel transistors","score":0.7799999713897705}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.820409893989563},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7789663672447205},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.7499916553497314},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7284756302833557},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7225891351699829},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6462319493293762},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6303276419639587},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5746134519577026},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.4390832483768463},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.27960026264190674},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2304668426513672},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.17247816920280457},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.05727434158325195},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.053307145833969116},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/led.2010.2043496","doi":"https://doi.org/10.1109/led.2010.2043496","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2010.2043496","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"doi:10.25405/ncl.34115811","doi":"https://doi.org/10.25405/ncl.34115811","is_oa":true,"landing_page_url":"https://doi.org/10.25405/ncl.34115811","pdf_url":null,"source":{"id":"https://openalex.org/S4306402485","display_name":"Newcastle University ePrints (Newcastle Univesity)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I84884186","host_organization_name":"Newcastle University","host_organization_lineage":["https://openalex.org/I84884186"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"JournalArticle"},{"id":"doi:10.25405/ncl.34115811.v1","doi":"https://doi.org/10.25405/ncl.34115811.v1","is_oa":true,"landing_page_url":"https://doi.org/10.25405/ncl.34115811.v1","pdf_url":null,"source":{"id":"https://openalex.org/S4306402485","display_name":"Newcastle University ePrints (Newcastle Univesity)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I84884186","host_organization_name":"Newcastle University","host_organization_lineage":["https://openalex.org/I84884186"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"JournalArticle"}],"best_oa_location":{"id":"doi:10.25405/ncl.34115811","doi":"https://doi.org/10.25405/ncl.34115811","is_oa":true,"landing_page_url":"https://doi.org/10.25405/ncl.34115811","pdf_url":null,"source":{"id":"https://openalex.org/S4306402485","display_name":"Newcastle University ePrints (Newcastle Univesity)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I84884186","host_organization_name":"Newcastle University","host_organization_lineage":["https://openalex.org/I84884186"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"JournalArticle"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3493874433","display_name":null,"funder_award_id":"EP/D036682/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1523476363","https://openalex.org/W1563801645","https://openalex.org/W1640220027","https://openalex.org/W2008611203","https://openalex.org/W2009484257","https://openalex.org/W2068285853","https://openalex.org/W2079999336","https://openalex.org/W2120340444","https://openalex.org/W2133331487","https://openalex.org/W2143711213","https://openalex.org/W2162676725"],"related_works":["https://openalex.org/W2313433833","https://openalex.org/W2018763167","https://openalex.org/W1586140573","https://openalex.org/W2525055927","https://openalex.org/W1992293058","https://openalex.org/W1964351778","https://openalex.org/W1973289668","https://openalex.org/W2048020856","https://openalex.org/W2073941793","https://openalex.org/W1506260363"],"abstract_inverted_index":{"Measuring":[0],"strain":[1,56],"in":[2,36,58],"long-channel":[3],"MOSFETs":[4],"on":[5],"silicon-on-insulator":[6],"(SOI)":[7],"and":[8,50],"strained-SOI":[9],"platforms":[10],"is":[11,26,45,69],"demonstrated":[12],"using":[13],"ultraviolet":[14],"(UV)":[15],"Raman":[16,21],"spectroscopy.":[17],"Removal":[18],"of":[19,63],"the":[20,40,54,59],"inactive":[22],"strain-inducing":[23],"metallization":[24],"layers":[25],"avoided":[27],"by":[28],"etching":[29],"trenches":[30],"under":[31],"transistors":[32,68],"without":[33],"mask":[34],"alignment":[35],"order":[37],"to":[38,47,66],"expose":[39],"channel":[41],"region.":[42],"The":[43,61],"technique":[44,65],"shown":[46],"be":[48],"repeatable":[49],"does":[51],"not":[52],"alter":[53],"initial":[55],"state":[57],"channel.":[60],"applicability":[62],"this":[64],"short-channel":[67],"also":[70],"discussed.":[71]},"counts_by_year":[{"year":2020,"cited_by_count":2}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}