{"id":"https://openalex.org/W2108957255","doi":"https://doi.org/10.1016/j.jlumin.2011.02.003","title":"Characterization of AlxGa1\u2212xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system","display_name":"Characterization of AlxGa1\u2212xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system","publication_year":2011,"publication_date":"2011-02-20","ids":{"openalex":"https://openalex.org/W2108957255","doi":"https://doi.org/10.1016/j.jlumin.2011.02.003","mag":"2108957255"},"language":"en","primary_location":{"id":"doi:10.1016/j.jlumin.2011.02.003","doi":"https://doi.org/10.1016/j.jlumin.2011.02.003","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jlumin.2011.02.003","pdf_url":null,"source":{"id":"https://openalex.org/S188673600","display_name":"Journal of Luminescence","issn_l":"0022-2313","issn":["0022-2313","1872-7883"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Luminescence","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019141017","display_name":"Roberto Sa\u00fal Castillo-Ojeda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095198","display_name":"Universidad Polit\u00e9cnica de Pachuca","ror":"https://ror.org/00r63rv29","country_code":"MX","type":"education","lineage":["https://openalex.org/I4210095198"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"R. Castillo-Ojeda","raw_affiliation_strings":["Universidad Polit\u00e9cnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa B\u00e1rbara, Municipio de Zempoala, Hidalgo 43830, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universidad Polit\u00e9cnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa B\u00e1rbara, Municipio de Zempoala, Hidalgo 43830, Mexico","institution_ids":["https://openalex.org/I4210095198"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043109314","display_name":"Joel D\u00edaz-Reyes","orcid":"https://orcid.org/0000-0003-0848-3388","observed_orcids":["https://orcid.org/0000-0003-0848-3388"]},"institutions":[{"id":"https://openalex.org/I59361560","display_name":"Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/059sp8j34","country_code":"MX","type":"education","lineage":["https://openalex.org/I59361560"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"J. D\u00edaz-Reyes","raw_affiliation_strings":["Instituto Politecnico Nacional, Centro de Investigaci\u00f3n en Biotecnolog\u00eda Aplicada, CIBA-IPN, Ex_Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto Politecnico Nacional, Centro de Investigaci\u00f3n en Biotecnolog\u00eda Aplicada, CIBA-IPN, Ex_Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700, Mexico","institution_ids":["https://openalex.org/I59361560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005570718","display_name":"M. Galv\u00e1n-Arellano","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"M. Galv\u00e1n-Arellano","raw_affiliation_strings":["CINVESTAV-IPN, Depto. de Ing. El\u00e9ctrica, SEES. Apdo. 14-740, M\u00e9xico, D.F. 07000, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CINVESTAV-IPN, Depto. de Ing. El\u00e9ctrica, SEES. Apdo. 14-740, M\u00e9xico, D.F. 07000, Mexico","institution_ids":["https://openalex.org/I68368234"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010218680","display_name":"Ram\u00f3n Pe\u00f1a-Sierra","orcid":"https://orcid.org/0000-0002-5412-7256","observed_orcids":["https://orcid.org/0000-0002-5412-7256"]},"institutions":[{"id":"https://openalex.org/I68368234","display_name":"Centro de Investigaci\u00f3n y de Estudios Avanzados del Instituto Polit\u00e9cnico Nacional","ror":"https://ror.org/009eqmr18","country_code":"MX","type":"facility","lineage":["https://openalex.org/I59361560","https://openalex.org/I68368234"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"R. Pe\u00f1a-Sierra","raw_affiliation_strings":["CINVESTAV-IPN, Depto. de Ing. El\u00e9ctrica, SEES. Apdo. 14-740, M\u00e9xico, D.F. 07000, Mexico"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CINVESTAV-IPN, Depto. de Ing. El\u00e9ctrica, SEES. Apdo. 14-740, M\u00e9xico, D.F. 07000, Mexico","institution_ids":["https://openalex.org/I68368234"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5043109314"],"corresponding_institution_ids":["https://openalex.org/I59361560"],"apc_list":{"value":2850,"currency":"USD","value_usd":2850},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"131","issue":"6","first_page":"1107","last_page":"1112"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9810000061988831,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9810000061988831,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.008500000461935997,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0024999999441206455,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-algaas-heterostructures","display_name":"GaAs/AlGaAs heterostructures","score":0.9860000014305115},{"id":"https://openalex.org/keywords/quantum-wells","display_name":"quantum wells","score":0.8500000238418579},{"id":"https://openalex.org/keywords/iii-v-semiconductor-growth","display_name":"III-V semiconductor growth","score":0.6480000019073486},{"id":"https://openalex.org/keywords/low-temperature-photoluminescence","display_name":"low-temperature photoluminescence","score":0.8759999871253967},{"id":"https://openalex.org/keywords/hall-effect","display_name":"Hall effect","score":0.8529999852180481},{"id":"https://openalex.org/keywords/x-ray-diffraction","display_name":"X-ray diffraction","score":0.7879999876022339},{"id":"https://openalex.org/keywords/raman-spectroscopy","display_name":"Raman spectroscopy","score":0.996999979019165},{"id":"https://openalex.org/keywords/secondary-ion-mass-spectrometry","display_name":"secondary ion mass spectrometry","score":0.9599999785423279},{"id":"https://openalex.org/keywords/atomic-force-microscopy","display_name":"atomic force microscopy","score":0.8069999814033508},{"id":"https://openalex.org/keywords/epilayer-quality","display_name":"epilayer quality","score":0.656000018119812}],"concepts":[{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.7840625643730164},{"id":"https://openalex.org/C502230775","wikidata":"https://www.wikidata.org/wiki/Q871","display_name":"Arsenic","level":2,"score":0.7547332048416138},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.7029277086257935},{"id":"https://openalex.org/C62284982","wikidata":"https://www.wikidata.org/wiki/Q903103","display_name":"X-ray absorption spectroscopy","level":3,"score":0.6995563507080078},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.659562349319458},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.5596513152122498},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.5414093136787415},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5241092443466187},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4610115587711334},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.44537806510925293},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.43281519412994385},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.4241967499256134},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.4216269552707672},{"id":"https://openalex.org/C119824511","wikidata":"https://www.wikidata.org/wiki/Q13553575","display_name":"Absorption spectroscopy","level":2,"score":0.38976678252220154},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.37491071224212646},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34516844153404236},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.2834303081035614},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2072412073612213},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.17707622051239014},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13955920934677124},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07441428303718567},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06902956962585449},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.05463668704032898},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.jlumin.2011.02.003","doi":"https://doi.org/10.1016/j.jlumin.2011.02.003","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jlumin.2011.02.003","pdf_url":null,"source":{"id":"https://openalex.org/S188673600","display_name":"Journal of Luminescence","issn_l":"0022-2313","issn":["0022-2313","1872-7883"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Luminescence","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1568903179","https://openalex.org/W1968436250","https://openalex.org/W1971580311","https://openalex.org/W1974391161","https://openalex.org/W1977538005","https://openalex.org/W2000601248","https://openalex.org/W2011185531","https://openalex.org/W2019652054","https://openalex.org/W2036367604","https://openalex.org/W2048241784","https://openalex.org/W2065337884","https://openalex.org/W2086724035","https://openalex.org/W2798612275"],"related_works":["https://openalex.org/W7047536460","https://openalex.org/W7002258131","https://openalex.org/W1937684723","https://openalex.org/W2597195085","https://openalex.org/W1995814754","https://openalex.org/W1602595548","https://openalex.org/W1984724648","https://openalex.org/W6987252921","https://openalex.org/W2600239803","https://openalex.org/W2113214314"],"abstract_inverted_index":null,"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2026-09-26T08:19:03.415552","created_date":"2016-06-24T00:00:00"}