{"id":"https://openalex.org/W2108599826","doi":"https://doi.org/10.1070/qe1978v008n09abeh010725","title":"Feasibility of construction of a pulsed avalanche photodetector based on an MIS structure with stable internal amplification","display_name":"Feasibility of construction of a pulsed avalanche photodetector based on an MIS structure with stable internal amplification","publication_year":1978,"publication_date":"1978-09-30","ids":{"openalex":"https://openalex.org/W2108599826","doi":"https://doi.org/10.1070/qe1978v008n09abeh010725","mag":"2108599826"},"language":"en","primary_location":{"id":"doi:10.1070/qe1978v008n09abeh010725","doi":"https://doi.org/10.1070/qe1978v008n09abeh010725","is_oa":true,"landing_page_url":"https://doi.org/10.1070/qe1978v008n09abeh010725","pdf_url":"https://iopscience.iop.org/article/10.1070/QE1978v008n09ABEH010725/pdf","source":{"id":"https://openalex.org/S86016426","display_name":"Soviet Journal of Quantum Electronics","issn_l":"0049-1748","issn":["0049-1748","2169-530X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Soviet Journal of Quantum Electronics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1070/QE1978v008n09ABEH010725/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009447495","display_name":"Andrey Kravchenko","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118517470","display_name":"P.N. Lebedev Physical Institute of the Russian Academy of Sciences","ror":"https://ror.org/01jkd3546","country_code":"RU","type":"facility","lineage":["https://openalex.org/I118517470","https://openalex.org/I1313323035","https://openalex.org/I2800498218","https://openalex.org/I4210096333"]},{"id":"https://openalex.org/I4405285364","display_name":"Academy of Sciences of the Soviet Union","ror":"https://ror.org/059mhqh10","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4405285364"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A B Kravchenko","raw_affiliation_strings":["Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow","institution_ids":["https://openalex.org/I118517470","https://openalex.org/I4405285364"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106184813","display_name":"\u0410. \u0424. \u041f\u043b\u043e\u0442\u043d\u0438\u043a\u043e\u0432","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118517470","display_name":"P.N. Lebedev Physical Institute of the Russian Academy of Sciences","ror":"https://ror.org/01jkd3546","country_code":"RU","type":"facility","lineage":["https://openalex.org/I118517470","https://openalex.org/I1313323035","https://openalex.org/I2800498218","https://openalex.org/I4210096333"]},{"id":"https://openalex.org/I4405285364","display_name":"Academy of Sciences of the Soviet Union","ror":"https://ror.org/059mhqh10","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4405285364"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"A F Plotnikov","raw_affiliation_strings":["Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow","institution_ids":["https://openalex.org/I118517470","https://openalex.org/I4405285364"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111732466","display_name":"Vitaly E. Shubin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118517470","display_name":"P.N. Lebedev Physical Institute of the Russian Academy of Sciences","ror":"https://ror.org/01jkd3546","country_code":"RU","type":"facility","lineage":["https://openalex.org/I118517470","https://openalex.org/I1313323035","https://openalex.org/I2800498218","https://openalex.org/I4210096333"]},{"id":"https://openalex.org/I4405285364","display_name":"Academy of Sciences of the Soviet Union","ror":"https://ror.org/059mhqh10","country_code":"RU","type":"government","lineage":["https://openalex.org/I1313323035","https://openalex.org/I4405285364"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"V \u00c9 Shubin","raw_affiliation_strings":["Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Lebedev Physics Institute , Academy of Sciences of the USSR , Moscow","institution_ids":["https://openalex.org/I118517470","https://openalex.org/I4405285364"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":8,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"8","issue":"9","first_page":"1086","last_page":"1089"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.6089000105857849,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.6089000105857849,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13418","display_name":"Photocathodes and Microchannel Plates","score":0.11169999837875366,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.10249999910593033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/avalanche-photodetectors","display_name":"avalanche photodetectors","score":0.8180000185966492},{"id":"https://openalex.org/keywords/metal-insulator-semiconductor-structures","display_name":"metal-insulator-semiconductor structures","score":0.8360000252723694},{"id":"https://openalex.org/keywords/avalanche-dynamics","display_name":"avalanche dynamics","score":0.6430000066757202}],"concepts":[{"id":"https://openalex.org/C85604662","wikidata":"https://www.wikidata.org/wiki/Q7187735","display_name":"Photodetection","level":3,"score":0.8503230810165405},{"id":"https://openalex.org/C109679912","wikidata":"https://www.wikidata.org/wiki/Q175932","display_name":"Avalanche photodiode","level":3,"score":0.5887224078178406},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5350948572158813},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5188789963722229},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.5133213400840759},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.4403780698776245},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.43352916836738586},{"id":"https://openalex.org/C193361668","wikidata":"https://www.wikidata.org/wiki/Q7523761","display_name":"Single-photon avalanche diode","level":4,"score":0.4191191792488098},{"id":"https://openalex.org/C95341827","wikidata":"https://www.wikidata.org/wiki/Q175898","display_name":"Avalanche diode","level":4,"score":0.41606706380844116},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.34392184019088745},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32003074884414673},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23752394318580627},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.17063117027282715},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.08285167813301086},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1070/qe1978v008n09abeh010725","doi":"https://doi.org/10.1070/qe1978v008n09abeh010725","is_oa":true,"landing_page_url":"https://doi.org/10.1070/qe1978v008n09abeh010725","pdf_url":"https://iopscience.iop.org/article/10.1070/QE1978v008n09ABEH010725/pdf","source":{"id":"https://openalex.org/S86016426","display_name":"Soviet Journal of Quantum Electronics","issn_l":"0049-1748","issn":["0049-1748","2169-530X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Soviet Journal of Quantum Electronics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1070/qe1978v008n09abeh010725","doi":"https://doi.org/10.1070/qe1978v008n09abeh010725","is_oa":true,"landing_page_url":"https://doi.org/10.1070/qe1978v008n09abeh010725","pdf_url":"https://iopscience.iop.org/article/10.1070/QE1978v008n09ABEH010725/pdf","source":{"id":"https://openalex.org/S86016426","display_name":"Soviet Journal of Quantum Electronics","issn_l":"0049-1748","issn":["0049-1748","2169-530X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Soviet Journal of Quantum Electronics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2108599826.pdf","grobid_xml":"https://content.openalex.org/works/W2108599826.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1999689591","https://openalex.org/W2009924649","https://openalex.org/W2048592589","https://openalex.org/W2063625905","https://openalex.org/W2070531889","https://openalex.org/W2026675630","https://openalex.org/W2031347148","https://openalex.org/W1992607431","https://openalex.org/W2049606753","https://openalex.org/W1982701012"],"abstract_inverted_index":{"A":[0],"theoretical":[1,46],"and":[2,44,64],"experimental":[3,42],"investigation":[4],"was":[5,21,38],"made":[6],"of":[7,10,26,54],"the":[8,24,41,45,52,55,78],"dynamics":[9,53],"a":[11,16,27,33,65],"pulsed":[12],"avalanche":[13,56,79],"process":[14,57],"in":[15,51,81],"metal\u2013insulator\u2013semiconductor":[17],"(MIS)":[18],"structure.":[19],"It":[20],"predicted":[22],"that":[23,71],"application":[25],"linearly":[28],"rising":[29],"voltage":[30],"should":[31,73],"produce":[32],"quasi-equilibrium":[34],"avalanche.":[35],"Full":[36],"agreement":[37],"observed":[39],"between":[40,60],"results":[43,69],"model.":[47],"The":[48,68],"principal":[49],"differences":[50],"were":[58],"established":[59],"an":[61],"MIS":[62],"structure":[63],"p\u2013n":[66],"junction.":[67],"indicated":[70],"it":[72],"be":[74],"possible":[75],"to":[76],"use":[77],"effect":[80],"new":[82],"optoelectronic":[83],"photodetection":[84],"systems.":[85]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2026-10-09T09:14:12.587421","created_date":"2016-06-24T00:00:00"}