{"id":"https://openalex.org/W2103560005","doi":"https://doi.org/10.1109/tsm.2006.883593","title":"Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology","display_name":"Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology","publication_year":2006,"publication_date":"2006-11-01","ids":{"openalex":"https://openalex.org/W2103560005","doi":"https://doi.org/10.1109/tsm.2006.883593","mag":"2103560005"},"language":"en","primary_location":{"id":"doi:10.1109/tsm.2006.883593","doi":"https://doi.org/10.1109/tsm.2006.883593","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tsm.2006.883593","pdf_url":null,"source":{"id":"https://openalex.org/S14676311","display_name":"IEEE Transactions on Semiconductor Manufacturing","issn_l":"0894-6507","issn":["0894-6507","1558-2345"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320439","host_organization_name":"IEEE Computer Society","host_organization_lineage":["https://openalex.org/P4310320439","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Computer Society","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Semiconductor Manufacturing","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113616026","display_name":"Hiroya Ohtake","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I201537933","display_name":"Tohoku University","ror":"https://ror.org/01dq60k83","country_code":"JP","type":"education","lineage":["https://openalex.org/I201537933"]},{"id":"https://openalex.org/I4405286145","display_name":"Institute of Fluid Science, Tohoku University","ror":"https://ror.org/0188kxs81","country_code":"JP","type":"facility","lineage":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Ohtake","raw_affiliation_strings":["Intelligent Nano-Process Laboratory, Institute of Fluid Science, University of Tohoku, Sendai, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Intelligent Nano-Process Laboratory, Institute of Fluid Science, University of Tohoku, Sendai, Japan","institution_ids":["https://openalex.org/I201537933","https://openalex.org/I4405286145"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108511723","display_name":"Masayoshi Tagami","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tagami","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066870244","display_name":"Munehiro Tada","orcid":"https://orcid.org/0000-0002-1015-2222","observed_orcids":["https://orcid.org/0000-0002-1015-2222"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tada","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113761295","display_name":"M. Ueki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Ueki","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012272732","display_name":"Mari Abe","orcid":"https://orcid.org/0000-0003-0903-3637","observed_orcids":["https://orcid.org/0000-0003-0903-3637"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Abe","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033140903","display_name":"S. Saito","orcid":"https://orcid.org/0000-0002-1829-6482","observed_orcids":["https://orcid.org/0000-0002-1829-6482"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Saito","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084008957","display_name":"Fuminori Ito","orcid":"https://orcid.org/0000-0002-3491-3321","observed_orcids":["https://orcid.org/0000-0002-3491-3321"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"F. Ito","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084117432","display_name":"Y. Hayashi","orcid":"https://orcid.org/0000-0002-2060-1351","observed_orcids":["https://orcid.org/0000-0002-2060-1351"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Hayashi","raw_affiliation_strings":["System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"System Devices Research Laboratories, NEC Corporation Limited, Kanagawa, Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.5449,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.60192735,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"19","issue":"4","first_page":"455","last_page":"464"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/fluorocarbon-plasma-etching","display_name":"fluorocarbon plasma etching","score":0.8230000138282776},{"id":"https://openalex.org/keywords/etch-selectivity","display_name":"etch selectivity","score":0.8270000219345093}],"concepts":[{"id":"https://openalex.org/C134406635","wikidata":"https://www.wikidata.org/wiki/Q1439684","display_name":"Photoresist","level":3,"score":0.7883156538009644},{"id":"https://openalex.org/C116372231","wikidata":"https://www.wikidata.org/wiki/Q605757","display_name":"Copper interconnect","level":3,"score":0.748579740524292},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7467681765556335},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7388391494750977},{"id":"https://openalex.org/C99293441","wikidata":"https://www.wikidata.org/wiki/Q4805101","display_name":"Ashing","level":2,"score":0.5794591903686523},{"id":"https://openalex.org/C6648577","wikidata":"https://www.wikidata.org/wiki/Q622669","display_name":"Porosity","level":2,"score":0.574640691280365},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5272266864776611},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4481359124183655},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.4211035370826721},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.39378565549850464},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2980654239654541},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13623178005218506},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08168774843215942},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tsm.2006.883593","doi":"https://doi.org/10.1109/tsm.2006.883593","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tsm.2006.883593","pdf_url":null,"source":{"id":"https://openalex.org/S14676311","display_name":"IEEE Transactions on Semiconductor Manufacturing","issn_l":"0894-6507","issn":["0894-6507","1558-2345"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320439","host_organization_name":"IEEE Computer Society","host_organization_lineage":["https://openalex.org/P4310320439","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Computer Society","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Semiconductor Manufacturing","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1480607885","https://openalex.org/W1506655603","https://openalex.org/W1595623537","https://openalex.org/W1605607589","https://openalex.org/W1641782685","https://openalex.org/W1872122580","https://openalex.org/W1909187425","https://openalex.org/W1915875433","https://openalex.org/W1923026835","https://openalex.org/W1973665898","https://openalex.org/W1978376575","https://openalex.org/W1986914212","https://openalex.org/W2036572270","https://openalex.org/W2062506665","https://openalex.org/W2109704133","https://openalex.org/W2119183787","https://openalex.org/W2128524515","https://openalex.org/W2467240845","https://openalex.org/W2539681533","https://openalex.org/W4238352284","https://openalex.org/W4253864829","https://openalex.org/W6640082040","https://openalex.org/W6728646658"],"related_works":["https://openalex.org/W2130328302","https://openalex.org/W2170934141","https://openalex.org/W1974469433","https://openalex.org/W2074371920","https://openalex.org/W2034187554","https://openalex.org/W2342732144","https://openalex.org/W2334444168","https://openalex.org/W2109704133","https://openalex.org/W2533674982","https://openalex.org/W1933998871"],"abstract_inverted_index":{"Low-damage":[0],"hard-mask":[1],"(HM)":[2],"plasma-etching":[3],"technology":[4],"for":[5,13,95,115],"porous":[6,35,104,120,149],"SiOCH":[7,37,57,121,150],"film":[8,122,151],"(k=2.6)":[9,36],"has":[10],"been":[11],"developed":[12,110],"robust":[14,142],"65-nm-node":[15,157],"Cu":[16,143],"dual":[17],"damascene":[18],"interconnects":[19],"(DDIs).":[20],"No":[21],"damage":[22,83,99],"is":[23,63,100],"introduced":[24],"by":[25,66,102,135],"fluorocarbon":[26],"plasma":[27,79],"etching":[28,53,78],"irrespective":[29],"of":[30,55,71],"whether":[31],"rigid":[32],"(k=2.9)":[33],"or":[34],"films":[38,58,86],"are":[39],"used,":[40],"due":[41,90],"to":[42,59,74,91,126,156],"the":[43,49,56,60,68,77,85,88,92,103,116,132],"protective":[44],"CF-polymer":[45],"layer":[46],"deposited":[47],"on":[48],"etched":[50],"sidewall.":[51],"The":[52],"selectivity":[54],"inorganic":[61],"HMs":[62],"kept":[64],"high":[65],"controlling":[67],"radical":[69],"ratio":[70],"carbon":[72],"relative":[73],"oxygen":[75],"in":[76,119,148],"gas.":[80],"However,":[81],"oxidation":[82],"penetrates":[84],"from":[87],"sidewalls":[89],"O2plasma":[93],"used":[94],"photoresist":[96],"ashing.":[97],"This":[98],"increased":[101],"structure.":[105],"As":[106],"a":[107,111],"result,":[108],"we":[109,130],"via-first":[112],"multi-hard-mask":[113],"process":[114],"DD":[117],"structure":[118],"with":[123,145],"no":[124],"exposure":[125],"O2-ashing":[127],"plasma,":[128],"and":[129,159],"controlled":[131],"via-taper":[133],"angle":[134],"RF":[136],"bias":[137],"during":[138],"etching.":[139],"We":[140],"fabricated":[141],"DDIs":[144],"tapered":[146],"vias":[147],"that":[152],"can":[153],"be":[154],"applied":[155],"ULSIs":[158],"beyond":[160]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2015,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}