{"id":"https://openalex.org/W2101257582","doi":"https://doi.org/10.1021/nl0498536","title":"Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor","display_name":"Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor","publication_year":2004,"publication_date":"2004-03-06","ids":{"openalex":"https://openalex.org/W2101257582","doi":"https://doi.org/10.1021/nl0498536","mag":"2101257582"},"language":"en","primary_location":{"id":"doi:10.1021/nl0498536","doi":"https://doi.org/10.1021/nl0498536","is_oa":false,"landing_page_url":"https://doi.org/10.1021/nl0498536","pdf_url":null,"source":{"id":"https://openalex.org/S143846845","display_name":"Nano Letters","issn_l":"1530-6984","issn":["1530-6984","1530-6992"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","ki-jl-2","medline","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nano Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114053585","display_name":"Ph\u00f3\u0302 Nguy\u1ebd\u0302n","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pho Nguyen","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112923947","display_name":"Hou T. Ng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hou T. Ng","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002321082","display_name":"Toshishige Yamada","orcid":"https://orcid.org/0000-0001-7145-9212","observed_orcids":["https://orcid.org/0000-0001-7145-9212"]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Toshishige Yamada","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104032719","display_name":"Michael K. Smith","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael K. Smith","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100361844","display_name":"Jun Li","orcid":"https://orcid.org/0000-0002-3689-8946","observed_orcids":["https://orcid.org/0000-0002-3689-8946"]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jun Li","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Jie Han","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jie Han","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5010735432","display_name":"Meyya Meyyappan","orcid":"https://orcid.org/0000-0001-9202-412X","observed_orcids":["https://orcid.org/0000-0001-9202-412X"]},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Meyyappan","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035","institution_ids":["https://openalex.org/I1280536761"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5112923947"],"corresponding_institution_ids":["https://openalex.org/I1280536761"],"apc_list":{"value":4500,"currency":"USD","value_usd":4500},"apc_paid":null,"fwci":11.1712,"has_fulltext":false,"cited_by_count":273,"citation_normalized_percentile":{"value":0.99180646,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":100},"biblio":{"volume":"4","issue":"4","first_page":"651","last_page":"657"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vertical-field-effect-transistors","display_name":"vertical field-effect transistors","score":0.8230000138282776},{"id":"https://openalex.org/keywords/indium-oxide-nanowires","display_name":"indium oxide nanowires","score":0.8809999823570251},{"id":"https://openalex.org/keywords/metal-oxide-nanowires","display_name":"metal oxide nanowires","score":0.777999997138977},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.75},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"nanoelectronics","score":0.5839999914169312},{"id":"https://openalex.org/keywords/optoelectronic-devices","display_name":"optoelectronic devices","score":0.9760000109672546}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.9296875},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7670296430587769},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.6542540788650513},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6468905806541443},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6307135820388794},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6044281125068665},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5756253004074097},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5754277110099792},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5191696882247925},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.5164611339569092},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.46045994758605957},{"id":"https://openalex.org/C32737372","wikidata":"https://www.wikidata.org/wiki/Q417718","display_name":"Indium tin oxide","level":3,"score":0.43081605434417725},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.4243006408214569},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3392147123813629},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11719200015068054},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.08242309093475342},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06228187680244446},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1021/nl0498536","doi":"https://doi.org/10.1021/nl0498536","is_oa":false,"landing_page_url":"https://doi.org/10.1021/nl0498536","pdf_url":null,"source":{"id":"https://openalex.org/S143846845","display_name":"Nano Letters","issn_l":"1530-6984","issn":["1530-6984","1530-6992"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","ki-jl-2","medline","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nano Letters","raw_type":"journal-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.470.1412","doi":null,"is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.470.1412","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://users.soe.ucsc.edu/~tyamada/Course_handouts/nanolett_04a.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1522345528","https://openalex.org/W1528214218","https://openalex.org/W1549199400","https://openalex.org/W1552527487","https://openalex.org/W1661368752","https://openalex.org/W2001552897","https://openalex.org/W2023579904","https://openalex.org/W2040503623","https://openalex.org/W2047400505","https://openalex.org/W2049240655","https://openalex.org/W2063468757","https://openalex.org/W2069437874","https://openalex.org/W2077669265","https://openalex.org/W2078227128","https://openalex.org/W2078809425","https://openalex.org/W2083167164","https://openalex.org/W2085167405","https://openalex.org/W2085494684","https://openalex.org/W2106415048","https://openalex.org/W2487401812"],"related_works":["https://openalex.org/W2043143494","https://openalex.org/W2142353285","https://openalex.org/W4242613133","https://openalex.org/W2016043800","https://openalex.org/W2261498910","https://openalex.org/W2041826386","https://openalex.org/W1969020148","https://openalex.org/W6927266660","https://openalex.org/W2056755574","https://openalex.org/W2588463356"],"abstract_inverted_index":{"We":[0,21],"demonstrate":[1],"seamless":[2],"direct":[3],"integration":[4],"of":[5],"a":[6,11,16,40,55,94],"semiconductor":[7,26],"nanowire":[8,68,106],"grown":[9],"using":[10],"bottom-up":[12],"approach":[13],"to":[14,48,121],"obtain":[15],"vertical":[17,115],"field-effect":[18],"transistor":[19],"(VFET).":[20],"first":[22],"synthesize":[23],"single":[24],"crystalline":[25],"indium":[27],"oxide":[28],"(In":[29],"2":[30,59,103],"O":[31,60,104],"3":[32,61,105],")":[33],"nanowires":[34,50],"projecting":[35],"vertically":[36],"and":[37,79,126],"uniformly":[38],"on":[39,90],"nonconducting":[41],"optical":[42],"sapphire":[43],"substrate.":[44],"Direct":[45],"electrical":[46],"contact":[47],"the":[49,67,91,108],"is":[51,111],"uniquely":[52],"provided":[53],"by":[54,84],"self-assembled":[56],"underlying":[57],"In":[58,102],"buffer":[62],"layer":[63],"formed":[64],"in-situ":[65],"during":[66],"growth.":[69],"A":[70],"controlled":[71],"time-resolved":[72],"growth":[73,81,87],"study":[74],"reveals":[75],"dynamic":[76],"simultaneous":[77],"nucleation":[78],"epitaxial":[80],"events,":[82],"driven":[83],"two":[85],"competitive":[86],"mechanisms.":[88],"Based":[89],"nanowire-integrated":[92],"platform,":[93],"depletion":[95],"mode":[96],"n":[97],"-channel":[98],"VFET":[99],"with":[100],"an":[101],"constituting":[107],"active":[109],"channel":[110],"fabricated.":[112],"Our":[113],"unique":[114],"device":[116],"architecture":[117],"could":[118],"potentially":[119],"lead":[120],"tera-level":[122],"ultrahigh-density":[123],"nanoscale":[124],"electronic,":[125],"optoelectronic":[127],"devices.":[128]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":11},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":9},{"year":2015,"cited_by_count":12},{"year":2014,"cited_by_count":20},{"year":2013,"cited_by_count":16},{"year":2012,"cited_by_count":17}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}