{"id":"https://openalex.org/W2098536554","doi":"https://doi.org/10.1109/iedm.1980.189939","title":"Interaction of IGFET field design with narrow channel device operation","display_name":"Interaction of IGFET field design with narrow channel device operation","publication_year":1980,"publication_date":"1980-01-01","ids":{"openalex":"https://openalex.org/W2098536554","doi":"https://doi.org/10.1109/iedm.1980.189939","mag":"2098536554"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.1980.189939","doi":"https://doi.org/10.1109/iedm.1980.189939","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1980.189939","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1980 International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036532273","display_name":"H. Kotecha","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Kotecha","raw_affiliation_strings":["IBM General Technology Division, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM General Technology Division, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110868410","display_name":"W. Noble","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Noble","raw_affiliation_strings":["IBM General Technology Division, Essex Junction, VT, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM General Technology Division, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":9.2424,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.98134111,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"724","last_page":"727"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-field-effect-transistors","display_name":"IGFET","score":0.9620000123977661},{"id":"https://openalex.org/keywords/narrow-channel-effect","display_name":"narrow channel effect","score":0.7139999866485596},{"id":"https://openalex.org/keywords/channel-width-scaling","display_name":"channel width scaling","score":0.7110000252723694},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.5329999923706055},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.9769999980926514},{"id":"https://openalex.org/keywords/process-variation","display_name":"process variation","score":0.4699999988079071}],"concepts":[{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.6680923700332642},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.6667195558547974},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6654052734375},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6476430296897888},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6340415477752686},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5838984251022339},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5750005841255188},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.5346870422363281},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5040916204452515},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4970081150531769},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.49543702602386475},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49072539806365967},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.4808405339717865},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4784272313117981},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.43744704127311707},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4145662188529968},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.41086292266845703},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3730104863643646},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3530447483062744},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.21889331936836243},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.17348966002464294},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.1734885573387146},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.12256637215614319},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1071852445602417},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.06129330396652222},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.1980.189939","doi":"https://doi.org/10.1109/iedm.1980.189939","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.1980.189939","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"1980 International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1531073954","https://openalex.org/W1919585080","https://openalex.org/W2005786793","https://openalex.org/W2038963454","https://openalex.org/W2060479672","https://openalex.org/W2077205329","https://openalex.org/W2114718521"],"related_works":["https://openalex.org/W2038963454","https://openalex.org/W2061647545","https://openalex.org/W2051624429","https://openalex.org/W2077205329","https://openalex.org/W2041136602","https://openalex.org/W2065560989","https://openalex.org/W4406461811","https://openalex.org/W2023871395","https://openalex.org/W2166018774","https://openalex.org/W1994114330"],"abstract_inverted_index":{"The":[0,141],"effects":[1,127],"of":[2,39,42,53,125],"decreasing":[3],"FET":[4,74,160],"channel":[5,25,43,58],"width":[6,26],"as":[7],"reported":[8,63],"by":[9],"previous":[10],"workers":[11],"reveal":[12],"three":[13],"basic":[14],"mechanisms:":[15],"Increase":[16],"in":[17,30,64,151],"current":[18],"drive":[19],"due":[20,33],"to":[21,34,46,134,153],"voltage":[22,32],"gradients":[23],"at":[24,57],"edge":[27,103],"tapers;":[28],"increase":[29],"threshold":[31],"the":[35,40,51,76,84,93,123],"two":[36],"dimensional":[37,112],"aspects":[38],"transition":[41],"depletion":[44],"region":[45],"field":[47,54],"oxide":[48],"region;":[49],"and":[50,105,128,137,146,158],"effect":[52],"doping":[55],"encroachment":[56],"edges.":[59],"An":[60],"independent":[61],"investigation":[62],"this":[65],"paper":[66],"shows":[67],"that":[68,122],"for":[69,156],"high":[70],"resistivity":[71],"substrate":[72,99],"poly-gate":[73],"technologies,":[75],"last":[77],"mechanism":[78],"has":[79],"a":[80],"strong":[81],"dependence":[82],"on":[83],"device's":[85],"effective":[86],"width,":[87],"which":[88],"varies":[89],"not":[90],"only":[91],"with":[92,98],"gate-to-source":[94],"bias":[95],"but":[96],"also":[97,109],"back":[100],"bias.":[101],"Junction":[102],"capacitance":[104],"breakdown":[106],"voltages":[107],"are":[108],"affected.":[110],"To":[111],"simulations":[113],"qualitatively":[114],"substantiate":[115],"these":[116,126],"observed":[117],"effects.":[118],"It":[119],"is":[120,149],"concluded":[121],"cause":[124],"its":[129,154],"variability":[130],"can":[131],"be":[132],"attributed":[133],"both":[135],"photo":[136],"hot":[138],"process":[139],"steps.":[140],"resultant":[142],"trade-off":[143],"between":[144],"density":[145],"device":[147],"performance":[148],"discussed":[150],"regard":[152],"implications":[155],"present":[157],"future":[159],"technologies.":[161]},"counts_by_year":[],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2016-06-24T00:00:00"}