{"id":"https://openalex.org/W2096847423","doi":"https://doi.org/10.1557/proc-433-3","title":"Low Temperature Fabrication of (Ba, Sr)TiO3 Thin Films by ECR Plasma CVD","display_name":"Low Temperature Fabrication of (Ba, Sr)TiO3 Thin Films by ECR Plasma CVD","publication_year":1996,"publication_date":"1996-01-01","ids":{"openalex":"https://openalex.org/W2096847423","doi":"https://doi.org/10.1557/proc-433-3","mag":"2096847423"},"language":"en","primary_location":{"id":"doi:10.1557/proc-433-3","doi":"https://doi.org/10.1557/proc-433-3","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-433-3","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110131831","display_name":"Yoshitake Kato","orcid":"https://orcid.org/0000-0001-9974-6942","observed_orcids":["https://orcid.org/0000-0001-9974-6942"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Y. Kato","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000009298","display_name":"Hisato Yabuta","orcid":"https://orcid.org/0000-0001-6008-7054","observed_orcids":["https://orcid.org/0000-0001-6008-7054"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Yabuta","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040883656","display_name":"Shuji Sone","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Sone","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":null,"display_name":"H. Yamaguchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Yamaguchi","raw_affiliation_strings":["ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091067358","display_name":"Takahiro Iizuka","orcid":"https://orcid.org/0000-0003-0680-6737","observed_orcids":["https://orcid.org/0000-0003-0680-6737"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Iizuka","raw_affiliation_strings":["ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040198707","display_name":"Shintaro Yamamichi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Yamamichi","raw_affiliation_strings":["ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109191583","display_name":"P-Y. Lesaicherre","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"P-Y. Lesaicherre","raw_affiliation_strings":["ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007201466","display_name":"Shozo Nishimoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Nishimoto","raw_affiliation_strings":["ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026196021","display_name":"Michiko Yoshida","orcid":"https://orcid.org/0000-0003-2364-1735","observed_orcids":["https://orcid.org/0000-0003-2364-1735"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Yoshida","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa, 216, Japan","institution_ids":["https://openalex.org/I118347220"]},{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-Ku, Kawasaki, Kanagawa 216, Japan, ykato@mrl.cl.nec.co.jp","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5110131831"],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":null,"apc_paid":null,"fwci":1.9458,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.83939464,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"433","issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9208999872207642,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9208999872207642,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.05389999970793724,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12155","display_name":"Microwave Dielectric Ceramics Synthesis","score":0.004000000189989805,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ba-sr-tio3-thin-films","display_name":"(Ba,Sr)TiO3 thin films","score":0.9049999713897705},{"id":"https://openalex.org/keywords/electron-cyclotron-resonance-plasma-cvd","display_name":"electron cyclotron resonance plasma CVD","score":0.8790000081062317},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.8220000267028809},{"id":"https://openalex.org/keywords/crystallinity","display_name":"crystallinity","score":0.7289999723434448},{"id":"https://openalex.org/keywords/grain-size","display_name":"grain size","score":0.8539999723434448},{"id":"https://openalex.org/keywords/deposition-rate","display_name":"deposition rate","score":0.9449999928474426},{"id":"https://openalex.org/keywords/dielectric-constant","display_name":"dielectric constant","score":0.9399999976158142},{"id":"https://openalex.org/keywords/leakage-current-density","display_name":"leakage current density","score":0.8799999952316284},{"id":"https://openalex.org/keywords/ferroelectric-thin-films","display_name":"ferroelectric thin films","score":0.7350000143051147}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8532793521881104},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.8270008563995361},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.7109149098396301},{"id":"https://openalex.org/C175361016","wikidata":"https://www.wikidata.org/wiki/Q245591","display_name":"Electron cyclotron resonance","level":3,"score":0.6622558832168579},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.649217963218689},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6355047821998596},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5630924701690674},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.5010268688201904},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.49810218811035156},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.29995179176330566},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17181140184402466},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1277909278869629},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.10507398843765259},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1557/proc-433-3","doi":"https://doi.org/10.1557/proc-433-3","is_oa":false,"landing_page_url":"https://doi.org/10.1557/proc-433-3","pdf_url":null,"source":{"id":"https://openalex.org/S2530005873","display_name":"MRS Proceedings","issn_l":"0272-9172","issn":["0272-9172","1946-4274"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1"],"host_organization":"https://openalex.org/P4310311721","host_organization_name":"Cambridge University Press","host_organization_lineage":["https://openalex.org/P4310311721","https://openalex.org/P4310311702"],"host_organization_lineage_names":["Cambridge University Press","University of Cambridge"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"MRS Proceedings","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1970969585","https://openalex.org/W2208913985","https://openalex.org/W2331645713","https://openalex.org/W2964344211"],"related_works":["https://openalex.org/W2009946983","https://openalex.org/W2075721275","https://openalex.org/W2073929646","https://openalex.org/W2312856652","https://openalex.org/W2058346268","https://openalex.org/W2072076610","https://openalex.org/W1996598707","https://openalex.org/W2131299513","https://openalex.org/W2091995231","https://openalex.org/W2092675701"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}