{"id":"https://openalex.org/W2096074167","doi":"https://doi.org/10.1109/55.661174","title":"Self-heating in high-power AlGaN-GaN HFETs","display_name":"Self-heating in high-power AlGaN-GaN HFETs","publication_year":1998,"publication_date":"1998-03-01","ids":{"openalex":"https://openalex.org/W2096074167","doi":"https://doi.org/10.1109/55.661174","mag":"2096074167"},"language":"en","primary_location":{"id":"doi:10.1109/55.661174","doi":"https://doi.org/10.1109/55.661174","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.661174","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047517573","display_name":"Remis Gaska","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Gaska","raw_affiliation_strings":["APA Optics, Inc., Blaine, MN, USA","APA Opt. Inc., Blaine, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"APA Optics, Inc., Blaine, MN, USA","institution_ids":[]},{"raw_affiliation_string":"APA Opt. Inc., Blaine, MN, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023466724","display_name":"Andrei V. Osinsky","orcid":"https://orcid.org/0009-0003-4175-9259","observed_orcids":["https://orcid.org/0009-0003-4175-9259"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Osinsky","raw_affiliation_strings":["APA Optics, Inc., Blaine, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"APA Optics, Inc., Blaine, MN, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016567418","display_name":"J. Yang","orcid":"https://orcid.org/0000-0002-0680-9105","observed_orcids":["https://orcid.org/0000-0002-0680-9105"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J.W. Yang","raw_affiliation_strings":["APA Optics, Inc., Blaine, MN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"APA Optics, Inc., Blaine, MN, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5070091935","display_name":"Michael S. Shur","orcid":"https://orcid.org/0000-0003-0976-6232","observed_orcids":["https://orcid.org/0000-0003-0976-6232"]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M.S. Shur","raw_affiliation_strings":["Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA","institution_ids":["https://openalex.org/I165799507"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":7.6547,"has_fulltext":false,"cited_by_count":306,"citation_normalized_percentile":{"value":0.98109287,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":"19","issue":"3","first_page":"89","last_page":"91"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.006000000052154064,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/self-heating-effect","display_name":"self-heating","score":0.9539999961853027},{"id":"https://openalex.org/keywords/algan-gan-heterostructures","display_name":"AlGaN/GaN heterostructures","score":0.8930000066757202},{"id":"https://openalex.org/keywords/high-frequency-transistors","display_name":"high-frequency transistors","score":0.8119999766349792},{"id":"https://openalex.org/keywords/thermal-impedance","display_name":"thermal impedance","score":0.9319999814033508},{"id":"https://openalex.org/keywords/silicon-carbide-substrate","display_name":"SiC substrate","score":0.7860000133514404},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.9940000176429749},{"id":"https://openalex.org/keywords/heat-dissipation","display_name":"heat dissipation","score":0.7879999876022339},{"id":"https://openalex.org/keywords/high-power-electronics","display_name":"high-power electronics","score":0.8109999895095825},{"id":"https://openalex.org/keywords/substrate-thermal-properties","display_name":"substrate thermal properties","score":0.5120000243186951}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8819882273674011},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.7992116212844849},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.77260822057724},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.7239914536476135},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5710514187812805},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5437262654304504},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5257859230041504},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4703167974948883},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.44089072942733765},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.42998117208480835},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.30775266885757446},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19597849249839783},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16953986883163452},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09264546632766724},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/55.661174","doi":"https://doi.org/10.1109/55.661174","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.661174","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W60805898","https://openalex.org/W630342638","https://openalex.org/W1677979352","https://openalex.org/W1975587671","https://openalex.org/W1977920155","https://openalex.org/W2004873410","https://openalex.org/W2053291496","https://openalex.org/W2059551891","https://openalex.org/W2090935082","https://openalex.org/W2134165364","https://openalex.org/W2169089613","https://openalex.org/W2343254168"],"related_works":["https://openalex.org/W2129261410","https://openalex.org/W2535000753","https://openalex.org/W2134165364","https://openalex.org/W1975257707","https://openalex.org/W2091360001","https://openalex.org/W1998266613","https://openalex.org/W2106789963","https://openalex.org/W2159544913","https://openalex.org/W2045624586","https://openalex.org/W1861468064"],"abstract_inverted_index":{"We":[0],"compare":[1],"self-heating":[2],"effects":[3],"in":[4,42,129],"AlGaN-GaN":[5,116],"heterostructure":[6],"field":[7],"effect":[8],"transistors":[9],"(HFETs)":[10],"grown":[11,77,109,118],"on":[12,78,110,119],"sapphire":[13],"and":[14,65],"SiC":[15,120],"substrates.":[16],"Heat":[17],"dissipation":[18],"strongly":[19],"affects":[20],"the":[21,26,29,45,53,62,68,71],"device":[22],"characteristics":[23],"soon":[24],"after":[25],"application":[27],"of":[28,70,85,96,124,136],"source-drain":[30],"voltage":[31],"(in":[32],"less":[33,49],"than":[34,50,93,99],"10/sup":[35],"-7/":[36],"s).":[37],"Our":[38,112],"results":[39,113],"show":[40],"that":[41,115],"HFET's":[43,108,117],"with":[44,132],"total":[46],"epilayer":[47],"thickness":[48],"1.5":[51],"\u03bcm,":[52],"thermal":[54,134],"impedance,":[55],"/spl":[56,83,100],"Theta/":[57,84],"is":[58],"primarily":[59],"determined":[60],"by":[61,67],"substrate":[63],"material":[64,69],"not":[66],"active":[72],"layer.":[73],"For":[74],"our":[75],"devices":[76,142],"6H-SiC":[79],"substrates,":[80],"we":[81],"measured":[82,104],"approximately":[86],"2/spl":[87],"deg/C/spl":[88],"middot/mm/W,":[89],"which":[90,138],"was":[91],"more":[92],"an":[94],"order":[95],"magnitude":[97],"smaller":[98],"Theta/=25/spl":[101],"deg/C":[102],"mm/W":[103],"for":[105,144],"similar":[106],"AlGaN/GaN":[107,130],"sapphire.":[111],"demonstrate":[114],"substrates":[121],"combine":[122],"advantages":[123],"superior":[125],"electron":[126],"transport":[127],"properties":[128,135],"heterostructures":[131],"excellent":[133],"SiC,":[137],"should":[139],"make":[140],"these":[141],"suitable":[143],"high-power":[145],"electronic":[146],"applications.":[147]},"counts_by_year":[{"year":2026,"cited_by_count":15},{"year":2025,"cited_by_count":12},{"year":2024,"cited_by_count":12},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":16},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":13},{"year":2019,"cited_by_count":19},{"year":2018,"cited_by_count":15},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":11},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":12},{"year":2013,"cited_by_count":7},{"year":2012,"cited_by_count":11}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}