{"id":"https://openalex.org/W2095067151","doi":"https://doi.org/10.1117/12.917888","title":"Apply low-temperature plasma in the rework procedure of Al film structure to prevent pattern collapsed and CuAl 2 precipitation","display_name":"Apply low-temperature plasma in the rework procedure of Al film structure to prevent pattern collapsed and CuAl 2 precipitation","publication_year":2012,"publication_date":"2012-03-10","ids":{"openalex":"https://openalex.org/W2095067151","doi":"https://doi.org/10.1117/12.917888","mag":"2095067151"},"language":"en","primary_location":{"id":"doi:10.1117/12.917888","doi":"https://doi.org/10.1117/12.917888","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.917888","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088543117","display_name":"Jau Yu Tsai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jau Yu Tsai","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046069634","display_name":"Kung-Hsun Tsao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Kung Hsun Tsao","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018739040","display_name":"Tsz Yuan Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsz Yuan Chen","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Chih Chung Huang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih Chung Huang","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029534536","display_name":"Huan Hsin Yeh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Huan Hsin Yeh","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113845306","display_name":"Yu Huan Liu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu Huan Liu","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210161555"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8324","issue":null,"first_page":"83243B","last_page":"83243B"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.8759999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.8759999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.1168999969959259,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-thermal-plasma","display_name":"non-thermal plasma","score":0.9589999914169312},{"id":"https://openalex.org/keywords/resist-stripping","display_name":"resist stripping","score":0.5649999976158142},{"id":"https://openalex.org/keywords/aluminum-interconnects","display_name":"aluminum interconnects","score":0.8809999823570251},{"id":"https://openalex.org/keywords/photoresist-adhesion","display_name":"photoresist adhesion","score":0.7289999723434448},{"id":"https://openalex.org/keywords/contact-angle","display_name":"contact angle","score":0.8450000286102295},{"id":"https://openalex.org/keywords/hot-plasma","display_name":"high-temperature plasma","score":0.5730000138282776},{"id":"https://openalex.org/keywords/yield-loss","display_name":"yield loss","score":0.6629999876022339}],"concepts":[{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.8823151588439941},{"id":"https://openalex.org/C2776543023","wikidata":"https://www.wikidata.org/wiki/Q2147046","display_name":"Rework","level":2,"score":0.8226998448371887},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.782148003578186},{"id":"https://openalex.org/C134406635","wikidata":"https://www.wikidata.org/wiki/Q1439684","display_name":"Photoresist","level":3,"score":0.5398193597793579},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5365827679634094},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5238787531852722},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5046068429946899},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.4966760277748108},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.457463800907135},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.4435919523239136},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4255567491054535},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37022119760513306},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.35846468806266785},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3151828646659851},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.21262484788894653},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.0826466977596283},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.917888","doi":"https://doi.org/10.1117/12.917888","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.917888","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2112374405","https://openalex.org/W2005733900","https://openalex.org/W2078859552","https://openalex.org/W2002379459","https://openalex.org/W2085434871","https://openalex.org/W1586382055","https://openalex.org/W7160846097","https://openalex.org/W4376269988","https://openalex.org/W2068024368","https://openalex.org/W2038844481"],"abstract_inverted_index":{"In":[0,130],"a":[1,71,120],"conventional":[2],"lithography":[3],"process":[4,42],"with":[5,24,111],"Al":[6,90,99,104],"film":[7,100],"structure,":[8],"the":[9,45,56,60,67,123,135,140,145,150,155,166,174],"photo":[10,46],"resist":[11,47,178],"pattern":[12,68,151],"is":[13,95,162],"removed":[14],"by":[15],"two":[16],"methods:":[17],"wet":[18,21,40,79],"etch":[19,22,41],"or":[20],"combine":[23],"dry":[25],"strip":[26],"process.":[27,180],"There":[28],"were":[29],"some":[30],"problems":[31],"in":[32,89,98],"these":[33],"kinds":[34],"of":[35,114,177],"processes.":[36],"Pattern":[37],"collapsed":[38,69,152],"after":[39,78],"due":[43],"to":[44,58,65,144,148],"(PR)":[48],"adhesion":[49,61],"capability":[50],"reduced.":[51],"Contact":[52],"angle":[53],"can":[54],"be":[55],"index":[57],"measure":[59],"capability.":[62],"So":[63],"as":[64],"prevent":[66,149],"issue,":[70],"high-temperature":[72,109],"plasma":[73,141],"treatment":[74],"step":[75],"was":[76],"added":[77],"etch.":[80],"But":[81],"it":[82],"induces":[83],"another":[84],"issue.":[85],"IC":[86],"devices":[87],"fabrication":[88],"interconnect":[91],"process,":[92],"0.5wt%":[93],"Cu":[94],"generally":[96],"used":[97],"deposition":[101],"for":[102],"better":[103],"electron":[105],"migration":[106],"performance.":[107],"The":[108,158],"Plasma":[110],"high":[112],"potentiality":[113],"CuAl2":[115,156],"precipitation,":[116],"which":[117],"will":[118],"form":[119],"residue":[121],"cause":[122],"metal":[124],"line":[125],"bridge":[126],"induce":[127],"yield":[128],"loss.":[129],"this":[131],"paper,":[132],"we":[133],"modify":[134],"rework":[136,160],"procedure":[137,161],"and":[138,154,169],"lower":[139],"processing":[142],"temperature":[143],"\"room":[146],"temperature\"":[147],"issue":[153],"precipitation.":[157],"modified":[159],"not":[163],"only":[164],"improved":[165],"defect,":[167],"WAT":[168],"yield,":[170],"but":[171],"also":[172],"reduce":[173],"cycle":[175],"time":[176],"remove":[179]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}