{"id":"https://openalex.org/W2091488694","doi":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","title":"Channel Hot-Carrier Effect of 4H-SiC MOSFET","display_name":"Channel Hot-Carrier Effect of 4H-SiC MOSFET","publication_year":2009,"publication_date":"2009-03-02","ids":{"openalex":"https://openalex.org/W2091488694","doi":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","mag":"2091488694"},"language":"en","primary_location":{"id":"doi:10.4028/www.scientific.net/msf.615-617.813","doi":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","is_oa":false,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103478684","display_name":"Liang Chun Yu","orcid":"https://orcid.org/0000-0003-0267-356X","observed_orcids":["https://orcid.org/0000-0003-0267-356X","https://orcid.org/0009-0003-0189-2573"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Liang Chun Yu","raw_affiliation_strings":["National Institute of Standards and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023990409","display_name":"Kin P. Cheung","orcid":"https://orcid.org/0000-0003-2210-9907","observed_orcids":["https://orcid.org/0000-0003-2210-9907"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kin P. Cheung","raw_affiliation_strings":["National Institute of Standards and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044786447","display_name":"John S. Suehle","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John S. Suehle","raw_affiliation_strings":["National Institute of Standards and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079177496","display_name":"Jason Paul Campbell","orcid":"https://orcid.org/0000-0002-3406-1165","observed_orcids":["https://orcid.org/0000-0002-3406-1165"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jason P. Campbell","raw_affiliation_strings":["National Institute of Standards and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062220386","display_name":"Kuang Sheng","orcid":"https://orcid.org/0000-0001-8839-7281","observed_orcids":["https://orcid.org/0000-0001-8839-7281"]},"institutions":[{"id":"https://openalex.org/I102322142","display_name":"Rutgers, The State University of New Jersey","ror":"https://ror.org/05vt9qd57","country_code":"US","type":"education","lineage":["https://openalex.org/I102322142"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kuang Sheng","raw_affiliation_strings":["Rutgers, University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rutgers, University","institution_ids":["https://openalex.org/I102322142"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086735042","display_name":"Aivars J. Lelis","orcid":"https://orcid.org/0000-0001-5342-8631","observed_orcids":["https://orcid.org/0000-0001-5342-8631"]},"institutions":[{"id":"https://openalex.org/I166416128","display_name":"DEVCOM Army Research Laboratory","ror":"https://ror.org/011hc8f90","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I166416128","https://openalex.org/I2802705668","https://openalex.org/I4210154437"]},{"id":"https://openalex.org/I4210088792","display_name":"United States Army","ror":"https://ror.org/00afsp483","country_code":"US","type":"government","lineage":["https://openalex.org/I1304082316","https://openalex.org/I1330347796","https://openalex.org/I4210088792"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Aivars J. Lelis","raw_affiliation_strings":["U.S. Army Research Laboratory","U.S. Army Research Laboratory,#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"U.S. Army Research Laboratory","institution_ids":["https://openalex.org/I166416128","https://openalex.org/I4210088792"]},{"raw_affiliation_string":"U.S. Army Research Laboratory,#TAB#","institution_ids":["https://openalex.org/I166416128","https://openalex.org/I4210088792"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019973006","display_name":"Sei\u2010Hyung Ryu","orcid":"https://orcid.org/0000-0002-3607-1199","observed_orcids":["https://orcid.org/0000-0002-3607-1199"]},"institutions":[{"id":"https://openalex.org/I4210109581","display_name":"Wolfspeed, Inc. (United States)","ror":"https://ror.org/02127h732","country_code":"US","type":"company","lineage":["https://openalex.org/I4210109581"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sei Hyung Ryu","raw_affiliation_strings":["Cree Incorporation"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cree Incorporation","institution_ids":["https://openalex.org/I4210109581"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7733,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.75600499,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"615-617","issue":null,"first_page":"813","last_page":"816"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/4h-sic-mosfet","display_name":"4H-SiC MOSFET","score":0.9869999885559082},{"id":"https://openalex.org/keywords/silicon-carbide-power-devices","display_name":"silicon carbide power devices","score":0.9350000023841858},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"impact ionization","score":0.9919999837875366},{"id":"https://openalex.org/keywords/hot-carrier-degradation","display_name":"hot carrier degradation","score":0.7020000219345093}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8597052097320557},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8393319845199585},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6132521629333496},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.5826301574707031},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.5599105358123779},{"id":"https://openalex.org/C73500089","wikidata":"https://www.wikidata.org/wiki/Q2445876","display_name":"Hot-carrier injection","level":4,"score":0.5567323565483093},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.501333475112915},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4885919690132141},{"id":"https://openalex.org/C171291426","wikidata":"https://www.wikidata.org/wiki/Q5072499","display_name":"Channel length modulation","level":5,"score":0.44931548833847046},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.4492003321647644},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4375378489494324},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4344967007637024},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.34610670804977417},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3234051465988159},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2721535563468933},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1409212350845337},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.06015107035636902},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.4028/www.scientific.net/msf.615-617.813","doi":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","is_oa":false,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.615-617.813","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"},{"id":"mag:2903256226","doi":null,"is_oa":false,"landing_page_url":"https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900181","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Materials science forum","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332178","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2052083323","https://openalex.org/W2903256226","https://openalex.org/W2068259642","https://openalex.org/W2529598461","https://openalex.org/W2171290915","https://openalex.org/W2993847203","https://openalex.org/W7117657938","https://openalex.org/W2021376766","https://openalex.org/W1908662053","https://openalex.org/W2744159707"],"abstract_inverted_index":{"SiC":[0,27],"MOSFET,":[1],"as":[2,35],"power":[3],"device,":[4],"can":[5],"be":[6],"expected":[7],"to":[8,19,31],"operate":[9],"with":[10],"high":[11,14,39],"drain":[12],"and":[13],"gate":[15],"voltages,":[16],"possibly":[17],"leading":[18],"hot-carrier":[20,23,51,75],"effect.":[21,76],"However,":[22],"degradation":[24],"in":[25,53,66],"a":[26],"MOSFET":[28],"is":[29,69],"difficult":[30],"detect":[32],"because":[33],"the":[34,46,67,70,73],"fabricated":[36],"devices":[37],"contain":[38],"level":[40],"of":[41,50,72],"defects.":[42],"We":[43],"report,":[44],"for":[45],"first":[47],"time,":[48],"evidence":[49],"effect":[52],"4H-SiC":[54],"MOSFET.":[55],"The":[56],"result":[57],"suggests":[58],"that":[59],"hot":[60],"hole":[61],"from":[62],"impact":[63],"ionization":[64],"trapped":[65],"oxide":[68],"cause":[71],"channel":[74]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}