{"id":"https://openalex.org/W2090989397","doi":"https://doi.org/10.1109/iedm.2008.4796809","title":"Random Telegraph Noise in n-type and p-type silicon nanowire transistors","display_name":"Random Telegraph Noise in n-type and p-type silicon nanowire transistors","publication_year":2008,"publication_date":"2008-12-01","ids":{"openalex":"https://openalex.org/W2090989397","doi":"https://doi.org/10.1109/iedm.2008.4796809","mag":"2090989397"},"language":"en","primary_location":{"id":"doi:10.1109/iedm.2008.4796809","doi":"https://doi.org/10.1109/iedm.2008.4796809","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2008.4796809","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Electron Devices Meeting","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002910714","display_name":"Seungwon Yang","orcid":"https://orcid.org/0000-0002-8970-7373","observed_orcids":["https://orcid.org/0000-0002-8970-7373"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwon Yang","raw_affiliation_strings":["Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, 151-742, Korea","Sch. of Electr. Eng, Seoul Nat. Univ., Seoul"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, 151-742, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"Sch. of Electr. Eng, Seoul Nat. Univ., Seoul","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111936031","display_name":"Kyoung Hwan Yeo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyoung Hwan Yeo","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100691394","display_name":"Dong\u2010Won Kim","orcid":"https://orcid.org/0000-0002-1735-0272","observed_orcids":["https://orcid.org/0000-0002-1735-0272"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong-Won Kim","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111862933","display_name":"Kang-Ill Seo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-ill Seo","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046074803","display_name":"Donggun Park","orcid":"https://orcid.org/0000-0002-7207-5170","observed_orcids":["https://orcid.org/0000-0002-7207-5170"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Donggun Park","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110477011","display_name":"Gyoyoung Jin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyoyoung Jin","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112223498","display_name":"Kyungseok Oh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"KyungSeok Oh","raw_affiliation_strings":["Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Technology Development Team 1, Research & Development Center, Samsung Electronics Company Limited, Hwasung, Gyeonggi, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"Adv. Technol. Dev. Team 1, Samsung Electron. Co., Hwasung","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111914425","display_name":"Hyungcheol Shin","orcid":"https://orcid.org/0009-0004-8293-8859","observed_orcids":["https://orcid.org/0009-0004-8293-8859"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyungcheol Shin","raw_affiliation_strings":["Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, 151-742, Korea","Sch. of Electr. Eng, Seoul Nat. Univ., Seoul"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, 151-742, Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"Sch. of Electr. Eng, Seoul Nat. Univ., Seoul","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":10.9155,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.98708162,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.5019999742507935,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.5019999742507935,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.4187000095844269,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.04919999837875366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/random-telegraph-noise","display_name":"random telegraph noise","score":1.0},{"id":"https://openalex.org/keywords/silicon-nanowire-transistors","display_name":"silicon nanowire transistors","score":0.9980000257492065},{"id":"https://openalex.org/keywords/n-type-silicon","display_name":"n-type silicon","score":0.8040000200271606},{"id":"https://openalex.org/keywords/p-type-silicon","display_name":"p-type silicon","score":1.0},{"id":"https://openalex.org/keywords/trap-location","display_name":"trap location","score":0.6819999814033508}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.8307013511657715},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.7816283702850342},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6746628284454346},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6683283448219299},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6289052367210388},{"id":"https://openalex.org/C2777299769","wikidata":"https://www.wikidata.org/wiki/Q3707858","display_name":"Type (biology)","level":2,"score":0.6146377325057983},{"id":"https://openalex.org/C2986665194","wikidata":"https://www.wikidata.org/wiki/Q28324872","display_name":"Silicon nanowires","level":3,"score":0.5711972117424011},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5481935739517212},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48758119344711304},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.301491379737854},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.12932142615318298},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.11105313897132874},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iedm.2008.4796809","doi":"https://doi.org/10.1109/iedm.2008.4796809","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iedm.2008.4796809","pdf_url":null,"source":{"id":"https://openalex.org/S4210168112","display_name":"Technical digest - International Electron Devices Meeting/Technical digest","issn_l":"0163-1918","issn":["0163-1918","2156-017X"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Electron Devices Meeting","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1493662694","https://openalex.org/W2038694080","https://openalex.org/W2043568133","https://openalex.org/W2102532202","https://openalex.org/W2128125131","https://openalex.org/W2134161098","https://openalex.org/W2155609362","https://openalex.org/W2542085131"],"related_works":["https://openalex.org/W1999615563","https://openalex.org/W1975755545","https://openalex.org/W2043615081","https://openalex.org/W2990600087","https://openalex.org/W2965792904","https://openalex.org/W2744015994","https://openalex.org/W2782142195","https://openalex.org/W1932497035","https://openalex.org/W3020547382","https://openalex.org/W2998294912"],"abstract_inverted_index":{"We":[0],"studied":[1],"random":[2],"telegraph":[3],"noise":[4],"(RTN)":[5],"of":[6],"n-type":[7],"and":[8,18,22],"p-type":[9],"silicon":[10],"nanowire":[11,28],"transistors":[12],"(SNWT)":[13],"for":[14],"the":[15,31,40],"first":[16],"time":[17],"derived":[19,32],"accurate":[20,34],"vertical":[21],"lateral":[23],"trap":[24,35,44],"location":[25],"equations":[26],"in":[27,39],"structure.":[29],"Using":[30],"equations,":[33],"locations":[36],"were":[37],"extracted":[38],"devices":[41],"with":[42],"single":[43],"as":[45,47],"well":[46],"multiple":[48],"traps.":[49]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-08T12:12:28.789561","created_date":"2016-06-24T00:00:00"}