{"id":"https://openalex.org/W2090737533","doi":"https://doi.org/10.1063/1.3028340","title":"Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors","display_name":"Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors","publication_year":2008,"publication_date":"2008-11-17","ids":{"openalex":"https://openalex.org/W2090737533","doi":"https://doi.org/10.1063/1.3028340","mag":"2090737533"},"language":"en","primary_location":{"id":"doi:10.1063/1.3028340","doi":"https://doi.org/10.1063/1.3028340","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3028340","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109134584","display_name":"Byung Du Ahn","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byung Du Ahn","raw_affiliation_strings":["Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034537655","display_name":"Hyun Soo Shin","orcid":"https://orcid.org/0000-0001-7967-5577","observed_orcids":["https://orcid.org/0000-0001-7967-5577"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Soo Shin","raw_affiliation_strings":["Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011866664","display_name":"Hyun Jae Kim","orcid":"https://orcid.org/0000-0002-6879-9256","observed_orcids":["https://orcid.org/0000-0002-6879-9256","https://orcid.org/0000-0001-9191-9079","https://orcid.org/0000-0002-6727-014X"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyun Jae Kim","raw_affiliation_strings":["Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Yonsei University 1 School of Electrical and Electronic Engineering, , Seoul 120-749, Republic of Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071947816","display_name":"Jin\u2010Seong Park","orcid":"https://orcid.org/0000-0002-9070-5666","observed_orcids":["https://orcid.org/0000-0002-9070-5666"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Seong Park","raw_affiliation_strings":["Samsung SDI Co., Ltd. 2 Corporate R and D Center, , Gyeonggi-Do 449-902, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung SDI Co., Ltd. 2 Corporate R and D Center, , Gyeonggi-Do 449-902, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005183857","display_name":"Jae Kyeong Jeong","orcid":"https://orcid.org/0000-0003-3857-1039","observed_orcids":["https://orcid.org/0000-0003-3857-1039"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Kyeong Jeong","raw_affiliation_strings":["Samsung SDI Co., Ltd. 2 Corporate R and D Center, , Gyeonggi-Do 449-902, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung SDI Co., Ltd. 2 Corporate R and D Center, , Gyeonggi-Do 449-902, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":11.2166,"has_fulltext":false,"cited_by_count":215,"citation_normalized_percentile":{"value":0.98802671,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":100},"biblio":{"volume":"93","issue":"20","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10045","display_name":"Organic Electronics and Photovoltaics","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-indium-gallium-zinc-oxide","display_name":"amorphous indium gallium zinc oxide","score":0.9800000190734863},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9629999995231628},{"id":"https://openalex.org/keywords/homojunction","display_name":"homojunction","score":0.8140000104904175},{"id":"https://openalex.org/keywords/ar-plasma-treatment","display_name":"Ar plasma treatment","score":0.7639999985694885},{"id":"https://openalex.org/keywords/hydrogen-donors","display_name":"hydrogen donors","score":0.5789999961853027},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.7570000290870667},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.8809999823570251},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.9750000238418579},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9279999732971191},{"id":"https://openalex.org/keywords/source-drain-formation","display_name":"source/drain formation","score":0.6079999804496765}],"concepts":[{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.9438042044639587},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7438972592353821},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.7243419885635376},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.6855530142784119},{"id":"https://openalex.org/C2982823382","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold swing","level":5,"score":0.6177860498428345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5757759809494019},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5337840914726257},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5327019691467285},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.5197774767875671},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.5014667510986328},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.4870055317878723},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.48040536046028137},{"id":"https://openalex.org/C162743726","wikidata":"https://www.wikidata.org/wiki/Q7115642","display_name":"Oxide thin-film transistor","level":4,"score":0.4235488474369049},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.380237877368927},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2336406111717224},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20107224583625793},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17819350957870483},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17311134934425354},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.14587581157684326},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.06260731816291809},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.3028340","doi":"https://doi.org/10.1063/1.3028340","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3028340","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1965733598","https://openalex.org/W1969619515","https://openalex.org/W1972176288","https://openalex.org/W1981386148","https://openalex.org/W2018540978","https://openalex.org/W2038957825","https://openalex.org/W2046384765","https://openalex.org/W2066592833","https://openalex.org/W2085752393","https://openalex.org/W2086103622","https://openalex.org/W2090698061","https://openalex.org/W2092426063","https://openalex.org/W2139727635"],"related_works":["https://openalex.org/W2042099080","https://openalex.org/W2038957825","https://openalex.org/W3002264761","https://openalex.org/W3010736914","https://openalex.org/W1553715513","https://openalex.org/W3024180892","https://openalex.org/W2241851736","https://openalex.org/W2790598820","https://openalex.org/W3130874321","https://openalex.org/W2507757964"],"abstract_inverted_index":{"We":[0],"proposed":[1],"a":[2,18,46,58,66,78,85],"homojunctioned":[3],"amorphous":[4],"InGaZnO":[5],"(a-IGZO)":[6],"thin":[7],"film":[8],"transistor":[9],"(TFT)":[10],"and":[11,34,84],"compared":[12],"its":[13],"performance":[14],"to":[15,43,57],"that":[16],"of":[17,48,60,69,76,81,88],"conventional":[19],"structured":[20],"TFT.":[21],"The":[22],"source/drain":[23],"regions":[24],"were":[25],"formed":[26],"in":[27],"the":[28],"a-IGZO":[29],"channel":[30],"layer":[31],"using":[32],"Ar":[33],"H2":[35,51],"plasma":[36,52],"treatments,":[37],"respectively.":[38],"Hydrogen":[39],"itself":[40],"was":[41],"found":[42],"act":[44],"as":[45],"carrier":[47],"donors":[49],"with":[50],"treatment,":[53],"which":[54],"had":[55,65],"effects":[56],"depth":[59],"50":[61],"nm.":[62],"Our":[63],"TFT":[64],"field-effect":[67],"mobility":[68],"7.27":[70],"cm2/V":[71],"s,":[72],"an":[73],"on/off":[74],"ratio":[75],"1.2\u00d7107,":[77],"threshold":[79],"voltage":[80],"0.96":[82],"V,":[83],"subthreshold":[86],"swing":[87],"0.49":[89],"V/decade.":[90]},"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":9},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":12},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":9},{"year":2020,"cited_by_count":15},{"year":2019,"cited_by_count":10},{"year":2018,"cited_by_count":16},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":20},{"year":2014,"cited_by_count":22},{"year":2013,"cited_by_count":19},{"year":2012,"cited_by_count":11}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}