{"id":"https://openalex.org/W2089173794","doi":"https://doi.org/10.1143/jpsj.54.2250","title":"Studies of Far-Infrared Properties of Thin Bismuth Films on BaF2Substrate","display_name":"Studies of Far-Infrared Properties of Thin Bismuth Films on BaF2Substrate","publication_year":1985,"publication_date":"1985-06-15","ids":{"openalex":"https://openalex.org/W2089173794","doi":"https://doi.org/10.1143/jpsj.54.2250","mag":"2089173794"},"language":"en","primary_location":{"id":"doi:10.1143/jpsj.54.2250","doi":"https://doi.org/10.1143/jpsj.54.2250","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jpsj.54.2250","pdf_url":null,"source":{"id":"https://openalex.org/S119212824","display_name":"Journal of the Physical Society of Japan","issn_l":"0031-9015","issn":["0031-9015","1347-4073"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310313296","host_organization_name":"Physical Society of Japan","host_organization_lineage":["https://openalex.org/P4310313296"],"host_organization_lineage_names":["Physical Society of Japan"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of the Physical Society of Japan","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111650789","display_name":"S. Takaoka","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sadao Takaoka","raw_affiliation_strings":["Department of Physics, Faculty of Science, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Faculty of Science, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111739149","display_name":"Kazuo Murase","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuo Murase","raw_affiliation_strings":["Department of Physics, Faculty of Science, Osaka University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Faculty of Science, Osaka University","institution_ids":["https://openalex.org/I98285908"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I98285908"],"apc_list":null,"apc_paid":null,"fwci":0.8055,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.70549816,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"54","issue":"6","first_page":"2250","last_page":"2256"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.8476999998092651,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.8476999998092651,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.06599999964237213,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.008200000040233135,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bismuth-thin-films","display_name":"bismuth thin films","score":0.9679999947547913},{"id":"https://openalex.org/keywords/baf2-substrate","display_name":"BaF2 substrate","score":0.9259999990463257},{"id":"https://openalex.org/keywords/far-infrared-reflectance","display_name":"far-infrared reflectivity","score":0.8980000019073486},{"id":"https://openalex.org/keywords/plasma-frequency","display_name":"plasma frequency","score":0.9909999966621399},{"id":"https://openalex.org/keywords/quantum-confinement","display_name":"quantum confinement","score":0.8090000152587891},{"id":"https://openalex.org/keywords/semimetal-semiconductor-transition","display_name":"semimetal-semiconductor transition","score":0.9890000224113464},{"id":"https://openalex.org/keywords/cyclotron-mass","display_name":"cyclotron mass","score":0.7139999866485596},{"id":"https://openalex.org/keywords/damping-factor","display_name":"damping factor","score":0.746999979019165},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.6290000081062317},{"id":"https://openalex.org/keywords/epitaxial-films","display_name":"epitaxial thin films","score":0.7730000019073486},{"id":"https://openalex.org/keywords/film-thickness-dependence","display_name":"film thickness dependence","score":0.6499999761581421}],"concepts":[{"id":"https://openalex.org/C533668322","wikidata":"https://www.wikidata.org/wiki/Q942","display_name":"Bismuth","level":2,"score":0.8091319799423218},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7756504416465759},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6194467544555664},{"id":"https://openalex.org/C177909632","wikidata":"https://www.wikidata.org/wiki/Q2033925","display_name":"Semimetal","level":3,"score":0.6023674607276917},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5612502694129944},{"id":"https://openalex.org/C179764930","wikidata":"https://www.wikidata.org/wiki/Q3509437","display_name":"Effective mass (spring\u2013mass system)","level":2,"score":0.5601290464401245},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.5393528938293457},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5126587748527527},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4928443431854248},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4877193868160248},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.48422932624816895},{"id":"https://openalex.org/C69607484","wikidata":"https://www.wikidata.org/wiki/Q5434654","display_name":"Far infrared","level":2,"score":0.4725363552570343},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.43510696291923523},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2552836537361145},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16405871510505676},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12964066863059998},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1258375644683838},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.11565807461738586},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.10689213871955872},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jpsj.54.2250","doi":"https://doi.org/10.1143/jpsj.54.2250","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jpsj.54.2250","pdf_url":null,"source":{"id":"https://openalex.org/S119212824","display_name":"Journal of the Physical Society of Japan","issn_l":"0031-9015","issn":["0031-9015","1347-4073"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310313296","host_organization_name":"Physical Society of Japan","host_organization_lineage":["https://openalex.org/P4310313296"],"host_organization_lineage_names":["Physical Society of Japan"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of the Physical Society of Japan","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1983948494","https://openalex.org/W1993971596","https://openalex.org/W1999144515","https://openalex.org/W2003669553","https://openalex.org/W2010651725","https://openalex.org/W2017914140","https://openalex.org/W2018224059","https://openalex.org/W2025089630","https://openalex.org/W2028505604","https://openalex.org/W2039318970","https://openalex.org/W2048034260","https://openalex.org/W2057732615","https://openalex.org/W2076580454","https://openalex.org/W2088776184","https://openalex.org/W2169720905"],"related_works":["https://openalex.org/W2015417220","https://openalex.org/W2011237749","https://openalex.org/W3015473554","https://openalex.org/W4405953323","https://openalex.org/W1987537798","https://openalex.org/W2169935661","https://openalex.org/W4200309920","https://openalex.org/W7033852041","https://openalex.org/W330501496","https://openalex.org/W2270803531"],"abstract_inverted_index":{"The":[0,62,79],"plasma":[1],"frequencies":[2],"(\u03c9":[3],"p":[4,34,67],")":[5],"of":[6,23,53,65,82,99],"epitaxially":[7],"grown":[8],"bismuth":[9],"film":[10,24,101,109],"on":[11],"BaF":[12],"2":[13],"are":[14,72],"determined":[15],"from":[16],"the":[17,58,83,96,100,104,108,111],"far-infrared":[18],"reflectivity":[19],"as":[20,50],"a":[21,51],"function":[22],"thickness":[25],"(":[26],"d":[27,31,43,77,89],").":[28],"With":[29],"decreasing":[30,88],",":[32],"\u03c9":[33,66],"increases":[35,86],"at":[36],"first":[37],"and":[38,68,110],"then":[39],"decreases":[40],"abruptly":[41],"near":[42],"=100":[44],"A":[45],".":[46,78,90],"This":[47],"is":[48],"considered":[49],"sign":[52],"semimetal-semiconductor":[54],"transition":[55],"caused":[56],"by":[57],"quantum":[59],"size":[60],"effect.":[61],"temperature":[63],"dependences":[64],"its":[69],"damping":[70],"factor":[71],"also":[73],"measured":[74],"with":[75,87],"various":[76],"cyclotron":[80],"mass":[81],"electron":[84],"band":[85],"To":[91],"explain":[92],"these":[93],"experimental":[94],"results,":[95],"strain":[97],"effects":[98],"due":[102],"to":[103,114],"lattice":[105],"mismatch":[106],"between":[107],"substrate":[112],"have":[113],"be":[115],"taken":[116],"into":[117],"account.":[118]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}