{"id":"https://openalex.org/W2085804185","doi":"https://doi.org/10.1063/1.1661875","title":"Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters","display_name":"Quantitative theory of retarded base diffusion in silicon n-p-n structures with arsenic emitters","publication_year":1973,"publication_date":"1973-01-01","ids":{"openalex":"https://openalex.org/W2085804185","doi":"https://doi.org/10.1063/1.1661875","mag":"2085804185"},"language":"en","primary_location":{"id":"doi:10.1063/1.1661875","doi":"https://doi.org/10.1063/1.1661875","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1661875","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006448685","display_name":"Richard B. Fair","orcid":"https://orcid.org/0000-0002-6728-1199","observed_orcids":["https://orcid.org/0000-0002-6728-1199"]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Richard B. Fair","raw_affiliation_strings":["Bell Telephone Laboratories, Reading, Pennsylvania 19603"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bell Telephone Laboratories, Reading, Pennsylvania 19603","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5006448685"],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":2.5045,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.88475373,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"44","issue":"1","first_page":"283","last_page":"291"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5756999850273132,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.5756999850273132,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.3878999948501587,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.011099999770522118,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/arsenic-diffusion","display_name":"arsenic diffusion","score":0.8050000071525574},{"id":"https://openalex.org/keywords/ion-pairing","display_name":"ion pairing","score":0.8130000233650208},{"id":"https://openalex.org/keywords/built-in-electric-field","display_name":"built-in electric field","score":0.9610000252723694},{"id":"https://openalex.org/keywords/boron-doped-silicon","display_name":"boron-doped silicon","score":0.6430000066757202},{"id":"https://openalex.org/keywords/coupled-diffusion-equations","display_name":"coupled diffusion equations","score":0.5339999794960022}],"concepts":[{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.7594982385635376},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.5837640166282654},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5184051990509033},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.49469754099845886},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4669163227081299},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.460843563079834},{"id":"https://openalex.org/C37668627","wikidata":"https://www.wikidata.org/wiki/Q3381809","display_name":"Thermal diffusivity","level":2,"score":0.45822465419769287},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.45526623725891113},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.45301488041877747},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.43552589416503906},{"id":"https://openalex.org/C152365726","wikidata":"https://www.wikidata.org/wiki/Q1048589","display_name":"Density functional theory","level":2,"score":0.4331128001213074},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.42970746755599976},{"id":"https://openalex.org/C42058472","wikidata":"https://www.wikidata.org/wiki/Q810214","display_name":"Base (topology)","level":2,"score":0.42429736256599426},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.41280868649482727},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.4110730290412903},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.38773584365844727},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3561074435710907},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.2651466131210327},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.22415858507156372},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.20691704750061035},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.18441396951675415},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08556967973709106},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1661875","doi":"https://doi.org/10.1063/1.1661875","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1661875","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1977114727","https://openalex.org/W1978918623","https://openalex.org/W1980036287","https://openalex.org/W1995248375","https://openalex.org/W2002010813","https://openalex.org/W2003420717","https://openalex.org/W2005693771","https://openalex.org/W2010472186","https://openalex.org/W2020824521","https://openalex.org/W2060521392","https://openalex.org/W2070234777","https://openalex.org/W2074124240","https://openalex.org/W2075206268","https://openalex.org/W2076863499","https://openalex.org/W2087926238","https://openalex.org/W2088947976","https://openalex.org/W2095458270","https://openalex.org/W2170470163"],"related_works":["https://openalex.org/W2053914293","https://openalex.org/W2004412652","https://openalex.org/W2078254360","https://openalex.org/W1969559689","https://openalex.org/W2044260058","https://openalex.org/W2002010813","https://openalex.org/W2060521392","https://openalex.org/W2059824139","https://openalex.org/W2052320542","https://openalex.org/W2141102770"],"abstract_inverted_index":{"When":[0],"As":[1,114],"is":[2,18,22,41,172],"sequentially":[3],"diffused":[4],"into":[5],"Ga":[6],"or":[7],"B-doped":[8],"Si,":[9],"a":[10,109,124,131,175],"retardation":[11,107],"of":[12,74,81,108,120,165,168,177],"the":[13,26,49,57,61,65,72,79,82,98,113,118,128,134,144,149,158,166,169],"p":[14],"-type":[15],"base":[16,83,161,183],"layer":[17,84],"generally":[19],"observed.":[20],"This":[21],"in":[23,59,127,133],"contrast":[24],"to":[25,36,43,46,92,130],"``emitter-push''":[27],"effect":[28,156],"associated":[29],"with":[30],"sequential":[31,86],"phosphorus":[32],"diffusions.":[33],"In":[34,54],"order":[35],"simulate":[37],"transistor":[38],"profiles":[39],"it":[40],"necessary":[42],"be":[44],"able":[45],"quantitatively":[47],"describe":[48],"emmiter-base":[50],"interactions":[51],"during":[52,85,112],"diffusion.":[53,116,162],"this":[55,152],"study,":[56],"way":[58],"which":[60],"internal":[62],"electric":[63,99],"field,":[64],"equilibrium":[66],"vacancy":[67,125,150,154],"density,":[68,151],"ion":[69],"pairing,":[70],"and":[71,101,179,185,187],"rate":[73],"[VSiAS2]":[75],"complex":[76],"formation":[77,119],"affect":[78],"redistribution":[80],"processing":[87],"was":[88],"investigated.":[89],"Numerical":[90],"solutions":[91],"coupled":[93],"diffusion":[94],"equations":[95],"indicate":[96],"that":[97],"field":[100],"ion-pairing":[102],"effects":[103],"only":[104],"cause":[105],"localized":[106],"B":[110],"profile":[111],"emitter":[115],"However,":[117],"[VSiAs2]":[121],"complexes":[122],"causes":[123,157],"undersaturation":[126,155],"Si":[129],"distance":[132],"crystal":[135],"well":[136],"beyond":[137],"most":[138],"practical":[139],"collector-base":[140],"junction":[141],"depths.":[142],"Since":[143],"local-base":[145],"diffusivity":[146],"depends":[147],"upon":[148],"extrinsic":[153],"expected":[159],"retarded":[160],"Experimental":[163],"verification":[164],"correctness":[167],"theory":[170],"present":[171],"given":[173],"as":[174],"function":[176],"emitter-":[178],"base-surface":[180],"concentrations,":[181],"initial":[182],"depths,":[184],"times":[186],"temperatures.":[188]},"counts_by_year":[],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}