{"id":"https://openalex.org/W2084053258","doi":"https://doi.org/10.1016/j.nimb.2008.02.048","title":"Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor","display_name":"Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor","publication_year":2008,"publication_date":"2008-03-05","ids":{"openalex":"https://openalex.org/W2084053258","doi":"https://doi.org/10.1016/j.nimb.2008.02.048","mag":"2084053258"},"language":"en","primary_location":{"id":"doi:10.1016/j.nimb.2008.02.048","doi":"https://doi.org/10.1016/j.nimb.2008.02.048","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.nimb.2008.02.048","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034887267","display_name":"C. M. Dinesh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I53465836","display_name":"Bangalore University","ror":"https://ror.org/050j2vm64","country_code":"IN","type":"education","lineage":["https://openalex.org/I53465836"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"C.M. Dinesh","raw_affiliation_strings":["Department of Physics, Bangalore University, Bangalore 560 056, India","Department of #N#Physics, Bangalore University, Bangalore - 560 056, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Bangalore University, Bangalore 560 056, India","institution_ids":["https://openalex.org/I53465836"]},{"raw_affiliation_string":"Department of #N#Physics, Bangalore University, Bangalore - 560 056, India","institution_ids":["https://openalex.org/I53465836"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Ramani","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I53465836","display_name":"Bangalore University","ror":"https://ror.org/050j2vm64","country_code":"IN","type":"education","lineage":["https://openalex.org/I53465836"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ramani","raw_affiliation_strings":["Department of Physics, Bangalore University, Bangalore 560 056, India","Department of #N#Physics, Bangalore University, Bangalore - 560 056, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Bangalore University, Bangalore 560 056, India","institution_ids":["https://openalex.org/I53465836"]},{"raw_affiliation_string":"Department of #N#Physics, Bangalore University, Bangalore - 560 056, India","institution_ids":["https://openalex.org/I53465836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088361712","display_name":"M. C. Radhakrishna","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I53465836","display_name":"Bangalore University","ror":"https://ror.org/050j2vm64","country_code":"IN","type":"education","lineage":["https://openalex.org/I53465836"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M.C. Radhakrishna","raw_affiliation_strings":["Department of Physics, Bangalore University, Bangalore 560 056, India","Department of #N#Physics, Bangalore University, Bangalore - 560 056, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Bangalore University, Bangalore 560 056, India","institution_ids":["https://openalex.org/I53465836"]},{"raw_affiliation_string":"Department of #N#Physics, Bangalore University, Bangalore - 560 056, India","institution_ids":["https://openalex.org/I53465836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082860204","display_name":"R.N. Dutt","orcid":"https://orcid.org/0000-0003-0516-5077","observed_orcids":["https://orcid.org/0000-0003-0516-5077"]},"institutions":[{"id":"https://openalex.org/I4210089002","display_name":"Inter-University Accelerator Centre","ror":"https://ror.org/0066qbn28","country_code":"IN","type":"facility","lineage":["https://openalex.org/I4210089002"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"R.N. Dutt","raw_affiliation_strings":["Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India","institution_ids":["https://openalex.org/I4210089002"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024726175","display_name":"Saif Ahmad Khan","orcid":"https://orcid.org/0000-0002-4770-7666","observed_orcids":["https://orcid.org/0000-0002-4770-7666"]},"institutions":[{"id":"https://openalex.org/I4210089002","display_name":"Inter-University Accelerator Centre","ror":"https://ror.org/0066qbn28","country_code":"IN","type":"facility","lineage":["https://openalex.org/I4210089002"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"S.A. Khan","raw_affiliation_strings":["Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India","institution_ids":["https://openalex.org/I4210089002"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041092062","display_name":"D. Kanjilal","orcid":"https://orcid.org/0000-0001-9728-3147","observed_orcids":["https://orcid.org/0000-0001-9728-3147"]},"institutions":[{"id":"https://openalex.org/I4210089002","display_name":"Inter-University Accelerator Centre","ror":"https://ror.org/0066qbn28","country_code":"IN","type":"facility","lineage":["https://openalex.org/I4210089002"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"D. Kanjilal","raw_affiliation_strings":["Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India","institution_ids":["https://openalex.org/I4210089002"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5034887267"],"corresponding_institution_ids":["https://openalex.org/I53465836"],"apc_list":{"value":2810,"currency":"USD","value_usd":2810},"apc_paid":null,"fwci":2.1886,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.86271241,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"266","issue":"8","first_page":"1713","last_page":"1718"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.003800000064074993,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/lithium-ion-irradiation","display_name":"lithium ion irradiation","score":0.8690000176429749},{"id":"https://openalex.org/keywords/ion-fluence-effects","display_name":"ion fluence effects","score":0.5659999847412109},{"id":"https://openalex.org/keywords/output-resistance","display_name":"output resistance","score":0.7089999914169312},{"id":"https://openalex.org/keywords/total-ionizing-dose","display_name":"total ionizing dose","score":0.8410000205039978},{"id":"https://openalex.org/keywords/trim-simulation","display_name":"TRIM simulation","score":0.578000009059906}],"concepts":[{"id":"https://openalex.org/C22078206","wikidata":"https://www.wikidata.org/wiki/Q1418023","display_name":"Fluence","level":3,"score":0.7982372045516968},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.715657114982605},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.7055358290672302},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.6083590984344482},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5563183426856995},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.5441495180130005},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5222775936126709},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4757623076438904},{"id":"https://openalex.org/C146904657","wikidata":"https://www.wikidata.org/wiki/Q201332","display_name":"Stopping power","level":3,"score":0.4696846306324005},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.453016072511673},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.43698638677597046},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.4146000146865845},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4145801067352295},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22784295678138733},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2214031219482422},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16187337040901184},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13466227054595947},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.08854475617408752},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1016/j.nimb.2008.02.048","doi":"https://doi.org/10.1016/j.nimb.2008.02.048","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.nimb.2008.02.048","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},{"id":"pmh:oai:eprints-bangaloreuniversity.in:1814","doi":null,"is_oa":false,"landing_page_url":"http://eprints-bangaloreuniversity.in/1814/1/Effect%20of%2050%20MeV%20Li3%2B%20ion%20irradiation%20on%20electrical%20characteristics%20of%20high%20speed%20NPN%20power%20transistor.pdf","pdf_url":"http://eprints-bangaloreuniversity.in/1814/1/Effect%20of%2050%20MeV%20Li3%2B%20ion%20irradiation%20on%20electrical%20characteristics%20of%20high%20speed%20NPN%20power%20transistor.pdf","source":{"id":"https://openalex.org/S4306401173","display_name":"ePrints@Bangalore University (Bangalore University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I53465836","host_organization_name":"Bangalore University","host_organization_lineage":["https://openalex.org/I53465836"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:eprints-bangaloreuniversity.in:5430","doi":null,"is_oa":false,"landing_page_url":"http://eprints-bangaloreuniversity.in/5430/1/datt.pdf","pdf_url":"http://eprints-bangaloreuniversity.in/5430/1/datt.pdf","source":{"id":"https://openalex.org/S4306401173","display_name":"ePrints@Bangalore University (Bangalore University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I53465836","host_organization_name":"Bangalore University","host_organization_lineage":["https://openalex.org/I53465836"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320337426","display_name":"Center for Substance Abuse Treatment","ror":"https://ror.org/03t3qg659"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W112633697","https://openalex.org/W136310430","https://openalex.org/W1964919267","https://openalex.org/W1965171373","https://openalex.org/W2001225682","https://openalex.org/W2007818042","https://openalex.org/W2013760995","https://openalex.org/W2037036601","https://openalex.org/W2041836328","https://openalex.org/W2050188066","https://openalex.org/W2053324565","https://openalex.org/W2053779612","https://openalex.org/W2060191591","https://openalex.org/W2067291016","https://openalex.org/W2104582305","https://openalex.org/W2112824480","https://openalex.org/W2152178004","https://openalex.org/W2166246065"],"related_works":["https://openalex.org/W2883202075","https://openalex.org/W2001925393","https://openalex.org/W2018147568","https://openalex.org/W2973380660","https://openalex.org/W953789154","https://openalex.org/W2020974485","https://openalex.org/W2970960668","https://openalex.org/W2003362024","https://openalex.org/W2620146645","https://openalex.org/W2405521011"],"abstract_inverted_index":null,"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2016-06-24T00:00:00"}