{"id":"https://openalex.org/W2083633692","doi":"https://doi.org/10.1063/1.3490199","title":"Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation","display_name":"Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation","publication_year":2010,"publication_date":"2010-10-15","ids":{"openalex":"https://openalex.org/W2083633692","doi":"https://doi.org/10.1063/1.3490199","mag":"2083633692"},"language":"en","primary_location":{"id":"doi:10.1063/1.3490199","doi":"https://doi.org/10.1063/1.3490199","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3490199","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003620381","display_name":"Ofer Moshe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["IL","US"],"is_corresponding":false,"raw_author_name":"O. Moshe","raw_affiliation_strings":["Ben-Gurion University of the Negev 1 Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, , P.O. Box 653, Beer-Sheva 84105, Israel","2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ben-Gurion University of the Negev 1 Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, , P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]},{"raw_affiliation_string":"3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069015659","display_name":"Daniel H. Rich","orcid":"https://orcid.org/0000-0001-5662-6529","observed_orcids":["https://orcid.org/0000-0001-5662-6529"]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["IL","US"],"is_corresponding":false,"raw_author_name":"D. H. Rich","raw_affiliation_strings":["Ben-Gurion University of the Negev 1 Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, , P.O. Box 653, Beer-Sheva 84105, Israel","2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ben-Gurion University of the Negev 1 Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, , P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]},{"raw_affiliation_string":"3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024646596","display_name":"Stefan Birner","orcid":"https://orcid.org/0000-0002-2961-1345","observed_orcids":["https://orcid.org/0000-0002-2961-1345"]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["IL","US"],"is_corresponding":false,"raw_author_name":"S. Birner","raw_affiliation_strings":["Walter Schottky Institute 2 Department of Physics, , Am Coulombwall 4, 85748 Garching, Germany","1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Walter Schottky Institute 2 Department of Physics, , Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]},{"raw_affiliation_string":"1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054359103","display_name":"Michael Povolotskyi","orcid":"https://orcid.org/0000-0002-1868-9534","observed_orcids":["https://orcid.org/0000-0002-1868-9534"]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["IL","US"],"is_corresponding":false,"raw_author_name":"M. Povolotskyi","raw_affiliation_strings":["Purdue University 3 School of Electrical and Computer Engineering, , 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Purdue University 3 School of Electrical and Computer Engineering, , 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]},{"raw_affiliation_string":"1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018806726","display_name":"B. Damilano","orcid":"https://orcid.org/0000-0001-7127-4461","observed_orcids":["https://orcid.org/0000-0001-7127-4461"]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR","IL","US"],"is_corresponding":false,"raw_author_name":"B. Damilano","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications 4 Centre National de la Recherche Scientifique, , Rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France","1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications 4 Centre National de la Recherche Scientifique, , Rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]},{"raw_affiliation_string":"1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]},{"raw_affiliation_string":"3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105501657","display_name":"J. Massies","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I124227911","display_name":"Ben-Gurion University of the Negev","ror":"https://ror.org/05tkyf982","country_code":"IL","type":"education","lineage":["https://openalex.org/I124227911"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]},{"id":"https://openalex.org/I4210124361","display_name":"Centre de Recherche sur l'H\u00e9t\u00e9ro-Epitaxie et ses Applications","ror":"https://ror.org/03y8mpv07","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I201841394","https://openalex.org/I4210098836","https://openalex.org/I4210124361"]}],"countries":["FR","IL","US"],"is_corresponding":false,"raw_author_name":"J. Massies","raw_affiliation_strings":["Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications 4 Centre National de la Recherche Scientifique, , Rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France","1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications 4 Centre National de la Recherche Scientifique, , Rue B. Gregory, Sophia Antipolis, 06560 Valbonne, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210124361"]},{"raw_affiliation_string":"1Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105, Israel","institution_ids":["https://openalex.org/I124227911"]},{"raw_affiliation_string":"2Department of Physics, Walter Schottky Institute, Am Coulombwall 4, 85748 Garching, Germany","institution_ids":[]},{"raw_affiliation_string":"3School of Electrical and Computer Engineering, Purdue University, 207S Martin Jischke Drive, DLR building, Room 441, West Lafayette, Indiana 47906, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.7094,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.69386982,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"108","issue":"8","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.5839999914169312,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.5839999914169312,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.41260001063346863,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10321","display_name":"Quantum Dots Synthesis And Properties","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-aln-quantum-dots","display_name":"GaN/AlN quantum dots","score":0.9929999709129333},{"id":"https://openalex.org/keywords/si-111-substrate","display_name":"Si(111) substrate","score":0.8889999985694885},{"id":"https://openalex.org/keywords/self-assembled-quantum-dots","display_name":"self-assembled quantum dots","score":0.847000002861023},{"id":"https://openalex.org/keywords/biaxial-stress","display_name":"biaxial stress","score":0.9539999961853027},{"id":"https://openalex.org/keywords/microcracks","display_name":"microcracks","score":0.7710000276565552},{"id":"https://openalex.org/keywords/polarization-anisotropy","display_name":"polarization anisotropy","score":0.8330000042915344},{"id":"https://openalex.org/keywords/excitonic-transitions","display_name":"excitonic transitions","score":0.6940000057220459},{"id":"https://openalex.org/keywords/cathodoluminescence","display_name":"cathodoluminescence","score":0.8600000143051147},{"id":"https://openalex.org/keywords/thermal-expansion-mismatch","display_name":"thermal expansion mismatch","score":0.7570000290870667},{"id":"https://openalex.org/keywords/interfacial-stress","display_name":"interfacial stress","score":0.7120000123977661},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.41600000858306885},{"id":"https://openalex.org/keywords/kp-method","display_name":"k\u00b7p method","score":0.6340000033378601},{"id":"https://openalex.org/keywords/schrodinger-poisson-self-consistent-solution","display_name":"Schr\u00f6dinger-Poisson self-consistent solution","score":0.703000009059906}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7264754772186279},{"id":"https://openalex.org/C85725439","wikidata":"https://www.wikidata.org/wiki/Q466686","display_name":"Anisotropy","level":2,"score":0.6921865940093994},{"id":"https://openalex.org/C139861200","wikidata":"https://www.wikidata.org/wiki/Q369794","display_name":"Cathodoluminescence","level":3,"score":0.662448525428772},{"id":"https://openalex.org/C83581075","wikidata":"https://www.wikidata.org/wiki/Q1361503","display_name":"Excitation","level":2,"score":0.6552702784538269},{"id":"https://openalex.org/C181500209","wikidata":"https://www.wikidata.org/wiki/Q215328","display_name":"Excited state","level":2,"score":0.6079345941543579},{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.555271327495575},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.5515727996826172},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5505120158195496},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.42159998416900635},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.39022982120513916},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20256486535072327},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.20011860132217407},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.19076654314994812},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16832944750785828},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15053445100784302},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.1083613932132721},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08923253417015076},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.3490199","doi":"https://doi.org/10.1063/1.3490199","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.3490199","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W117047443","https://openalex.org/W1662586408","https://openalex.org/W1983507121","https://openalex.org/W1986055581","https://openalex.org/W1987919098","https://openalex.org/W1989210356","https://openalex.org/W1992390409","https://openalex.org/W1998481993","https://openalex.org/W2004913575","https://openalex.org/W2006271366","https://openalex.org/W2009639702","https://openalex.org/W2016295172","https://openalex.org/W2022049022","https://openalex.org/W2027765280","https://openalex.org/W2039368102","https://openalex.org/W2044284763","https://openalex.org/W2054679326","https://openalex.org/W2061414206","https://openalex.org/W2064977348","https://openalex.org/W2071854924","https://openalex.org/W2076823462","https://openalex.org/W2078271882","https://openalex.org/W2079309413","https://openalex.org/W2079460966","https://openalex.org/W2082059478","https://openalex.org/W2083130836","https://openalex.org/W2083812741","https://openalex.org/W2084816419","https://openalex.org/W2086807860","https://openalex.org/W2103898150","https://openalex.org/W2154366240","https://openalex.org/W2158541121"],"related_works":["https://openalex.org/W2004913575","https://openalex.org/W2027765280","https://openalex.org/W2009639702","https://openalex.org/W2048842827","https://openalex.org/W2064977348","https://openalex.org/W2071230521","https://openalex.org/W2123245243","https://openalex.org/W2006742526","https://openalex.org/W4380686460","https://openalex.org/W1513512015"],"abstract_inverted_index":{"We":[0,290],"have":[1,115],"studied":[2],"the":[3,32,38,42,53,81,93,120,123,129,136,157,161,169,176,182,192,202,216,219,235,241,245,258,264,274,311,316],"excitation-":[4],"and":[5,41,45,160,184,196,244,260,267,278,280,294],"polarization-dependent":[6],"optical":[7],"properties":[8],"of":[9,20,68,97,122,135,175,194,215,234,237,257,273,287,298],"GaN/AlN":[10,39],"self-assembled":[11],"quantum":[12],"dots":[13],"(QDs)":[14],"grown":[15],"on":[16,128,156,191,240,253],"Si(111)":[17,43],"substrates.":[18],"Ensembles":[19],"QDs":[21,177],"were":[22,71],"subject":[23,109],"to":[24,56,91,110,148,167,308],"various":[25],"external":[26],"stress":[27,70,113],"configurations":[28],"that":[29,78,201],"resulted":[30],"from":[31,47,63,180],"thermal":[33,296],"expansion":[34],"coefficient":[35],"mismatch":[36],"between":[37],"layers":[40],"substrate":[44],"ranged":[46],"in-plane":[48,57,141],"uniaxial":[49,69,98],"stress,":[50,59],"primarily":[51],"along":[52],"\u27e8112\u00af0\u27e9":[54],"directions,":[55],"biaxial":[58],"having":[60],"magnitudes":[61],"ranging":[62],"20\u201330":[64],"kbar.":[65],"Limited":[66],"regions":[67,96],"obtained":[72],"by":[73,118],"exploiting":[74],"naturally":[75],"occurring":[76],"microcracks":[77,85],"form":[79],"during":[80,306],"postgrowth":[82],"cooling.":[83],"These":[84],"act":[86],"as":[87,251],"stressors":[88],"in":[89,145,315],"order":[90],"create":[92],"highly":[94],"localized":[95],"stress.":[99,131],"The":[100,150],"local":[101],"strain":[102],"tensors":[103],"for":[104,271,284,310],"such":[105],"QDs,":[106,217],"which":[107],"are":[108],"an":[111,140,212,320],"interfacial":[112,130],"perturbation,":[114],"been":[116],"determined":[117],"modeling":[119,233],"dependence":[121],"QD":[124,170,303],"excitonic":[125,137,246],"transition":[126,247],"energy":[127,248,302],"Cathodoluminescence":[132],"(CL)":[133],"measurements":[134],"transitions":[138],"exhibit":[139],"linear":[142],"polarization":[143,151,203,242,317],"anisotropy":[144,152,204,220,243,318],"close":[146],"proximity":[147],"microcracks.":[149],"is":[153],"strongly":[154],"dependent":[155],"sample":[158],"temperature":[159],"electron":[162,279],"beam":[163],"excitation":[164,195,214,225,297,307,324],"conditions":[165],"used":[166],"excite":[168],"ensemble.":[171],"Localized":[172],"CL":[173],"spectroscopy":[174],"exhibits":[178],"emissions":[179],"both":[181],"ground":[183],"excited":[185],"states,":[186],"whose":[187],"relative":[188],"contributions":[189],"depend":[190],"level":[193],"temperature.":[197],"Experimental":[198],"results":[199],"indicate":[200],"vanishes":[205],"at":[206,226,326],"high":[207],"temperatures":[208,228],"(\u223c300":[209],"K)":[210],"with":[211,224,319],"increasing":[213,321],"while":[218],"decreases":[221],"more":[222],"slowly":[223],"low":[227],"(\u223c60":[229],"K).":[230],"A":[231],"theoretical":[232],"effect":[236],"carrier":[238,292],"filling":[239,293],"was":[249],"performed,":[250],"based":[252],"three-dimensional":[254],"self-consistent":[255],"solutions":[256],"Schr\u00f6dinger":[259],"Poisson":[261],"equations":[262],"using":[263],"6\u00d76":[265],"k\u22c5p":[266],"effective":[268],"mass":[269],"methods":[270],"calculations":[272],"e-h":[275],"wave":[276],"functions":[277],"hole":[281,304],"quasi-Fermi":[282],"levels":[283,286],"varying":[285],"state":[288],"filling.":[289],"attribute":[291],"a":[295],"holes":[299],"into":[300],"higher":[301],"states":[305],"account":[309],"observed":[312],"gradual":[313],"decrease":[314],"electron-hole":[322],"pair":[323],"density":[325],"T=300":[327],"K.":[328]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}