{"id":"https://openalex.org/W2081920457","doi":"https://doi.org/10.1016/s0167-9317(98)00156-7","title":"Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes","display_name":"Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes","publication_year":1998,"publication_date":"1998-08-01","ids":{"openalex":"https://openalex.org/W2081920457","doi":"https://doi.org/10.1016/s0167-9317(98)00156-7","mag":"2081920457"},"language":"en","primary_location":{"id":"doi:10.1016/s0167-9317(98)00156-7","doi":"https://doi.org/10.1016/s0167-9317(98)00156-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0167-9317(98)00156-7","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"K Kawasaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I207014233","display_name":"Kyushu Institute of Technology","ror":"https://ror.org/02278tr80","country_code":"JP","type":"education","lineage":["https://openalex.org/I207014233"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K Kawasaki","raw_affiliation_strings":["Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan","institution_ids":["https://openalex.org/I207014233"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034848112","display_name":"Kenji Kawashima","orcid":"https://orcid.org/0000-0003-4786-3498","observed_orcids":["https://orcid.org/0000-0003-4786-3498"]},"institutions":[{"id":"https://openalex.org/I207014233","display_name":"Kyushu Institute of Technology","ror":"https://ror.org/02278tr80","country_code":"JP","type":"education","lineage":["https://openalex.org/I207014233"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"K Kawashima","raw_affiliation_strings":["Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan","institution_ids":["https://openalex.org/I207014233"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109306760","display_name":"M. Takeuchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I207014233","display_name":"Kyushu Institute of Technology","ror":"https://ror.org/02278tr80","country_code":"JP","type":"education","lineage":["https://openalex.org/I207014233"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M Takeuchi","raw_affiliation_strings":["Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan","institution_ids":["https://openalex.org/I207014233"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108621464","display_name":"K. Fujiwara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I207014233","display_name":"Kyushu Institute of Technology","ror":"https://ror.org/02278tr80","country_code":"JP","type":"education","lineage":["https://openalex.org/I207014233"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K Fujiwara","raw_affiliation_strings":["Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan","institution_ids":["https://openalex.org/I207014233"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5034848112"],"corresponding_institution_ids":["https://openalex.org/I207014233"],"apc_list":{"value":2860,"currency":"USD","value_usd":2860},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"43-44","issue":null,"first_page":"139","last_page":"145"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.8109999895095825,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.8109999895095825,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.06040000170469284,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.04919999837875366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-alas-superlattices","display_name":"GaAs/AlAs superlattices","score":0.9449999928474426},{"id":"https://openalex.org/keywords/pin-diodes","display_name":"PIN diodes","score":0.9729999899864197},{"id":"https://openalex.org/keywords/barrier-thickness","display_name":"barrier thickness","score":0.8700000047683716},{"id":"https://openalex.org/keywords/wannier-stark-localization","display_name":"Wannier-Stark localization","score":0.9869999885559082},{"id":"https://openalex.org/keywords/carrier-lifetime","display_name":"carrier lifetime","score":0.9049999713897705},{"id":"https://openalex.org/keywords/electric-field-dependence","display_name":"electric field dependence","score":0.6489999890327454},{"id":"https://openalex.org/keywords/photodetection","display_name":"photodetection","score":0.39100000262260437}],"concepts":[{"id":"https://openalex.org/C105382558","wikidata":"https://www.wikidata.org/wiki/Q332431","display_name":"Superlattice","level":2,"score":0.8142024278640747},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7977827787399292},{"id":"https://openalex.org/C2779845233","wikidata":"https://www.wikidata.org/wiki/Q3381567","display_name":"Photocurrent","level":2,"score":0.7152085900306702},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.5414100289344788},{"id":"https://openalex.org/C93038891","wikidata":"https://www.wikidata.org/wiki/Q1061524","display_name":"Intensity (physics)","level":2,"score":0.5118350386619568},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.4941590130329132},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.48593869805336},{"id":"https://openalex.org/C4839761","wikidata":"https://www.wikidata.org/wiki/Q212111","display_name":"Spectral line","level":2,"score":0.45895323157310486},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.44894692301750183},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4365690350532532},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4102552533149719},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.3865870535373688},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3232284188270569},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.30869370698928833},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17657271027565002},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09571382403373718},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/s0167-9317(98)00156-7","doi":"https://doi.org/10.1016/s0167-9317(98)00156-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0167-9317(98)00156-7","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronic Engineering","raw_type":"journal-article"},{"id":"mag:3044873595","doi":null,"is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/detail?JGLOBAL_ID=201102193858748111","pdf_url":null,"source":{"id":"https://openalex.org/S158028765","display_name":"Microelectronic Engineering","issn_l":"0167-9317","issn":["0167-9317","1873-5568"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Microelectronic Engineering","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967962068","https://openalex.org/W1977529785","https://openalex.org/W2012081520","https://openalex.org/W2025755398","https://openalex.org/W2031359861","https://openalex.org/W2033122908","https://openalex.org/W2051403666","https://openalex.org/W2061022860","https://openalex.org/W2066414440","https://openalex.org/W2072881202","https://openalex.org/W2095460322"],"related_works":["https://openalex.org/W2042666173","https://openalex.org/W2011034850","https://openalex.org/W2164539168","https://openalex.org/W2025755398","https://openalex.org/W1979011899","https://openalex.org/W2079556141","https://openalex.org/W2037654774","https://openalex.org/W2064527883","https://openalex.org/W2092730871","https://openalex.org/W1983442046"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}