{"id":"https://openalex.org/W2079790010","doi":"https://doi.org/10.1088/1674-4926/30/1/014001","title":"A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication","display_name":"A novel GAAC FinFET transistor: device analysis, 3D TCAD simulation, and fabrication","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W2079790010","doi":"https://doi.org/10.1088/1674-4926/30/1/014001","mag":"2079790010"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/30/1/014001","doi":"https://doi.org/10.1088/1674-4926/30/1/014001","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/30/1/014001","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Xiao Deyuan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiao Deyuan","raw_affiliation_strings":["Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China","Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China","institution_ids":["https://openalex.org/I4210142504"]},{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101806719","display_name":"Xi Wang","orcid":"https://orcid.org/0000-0002-7905-0080","observed_orcids":["https://orcid.org/0000-0002-7905-0080"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Wang Xi","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001381614","display_name":"Yuan Haijiang","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Yuan Haijiang","raw_affiliation_strings":["Synopsys Inc, Shanghai 200050, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Synopsys Inc, Shanghai 200050, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089220011","display_name":"Yuehui Yu","orcid":"https://orcid.org/0000-0001-7794-0787","observed_orcids":["https://orcid.org/0000-0001-7794-0787"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210147322","display_name":"Shanghai Institute of Microsystem and Information Technology","ror":"https://ror.org/04nytyj38","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yu Yuehui","raw_affiliation_strings":["Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210147322"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100835137","display_name":"Zhifeng Xie","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xie Zhifeng","raw_affiliation_strings":["Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China","institution_ids":["https://openalex.org/I4210142504"]}]},{"author_position":"last","author":{"id":null,"display_name":"Chi Minhwa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chi Minhwa","raw_affiliation_strings":["Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203, China","institution_ids":["https://openalex.org/I4210142504"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5001381614","https://openalex.org/A5089220011","https://openalex.org/A5101806719"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210142504","https://openalex.org/I4210147322"],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"30","issue":"1","first_page":"014001","last_page":"014001"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cylindrical-channel","display_name":"cylindrical channel","score":0.7269999980926514},{"id":"https://openalex.org/keywords/accumulation-mode","display_name":"accumulation mode","score":0.656000018119812},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.9089999794960022},{"id":"https://openalex.org/keywords/corner-effects","display_name":"corner effects","score":0.8460000157356262},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.9639999866485596},{"id":"https://openalex.org/keywords/3d-tcad-simulation","display_name":"3D TCAD simulation","score":0.7760000228881836},{"id":"https://openalex.org/keywords/device-fabrication","display_name":"device fabrication","score":0.5450000166893005}],"concepts":[{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6768635511398315},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.6538065671920776},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6367855072021484},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6005066633224487},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.590263307094574},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.565167248249054},{"id":"https://openalex.org/C34929307","wikidata":"https://www.wikidata.org/wiki/Q845636","display_name":"Technology CAD","level":3,"score":0.5360778570175171},{"id":"https://openalex.org/C11918236","wikidata":"https://www.wikidata.org/wiki/Q7501554","display_name":"Short-channel effect","level":5,"score":0.5070161819458008},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.49823427200317383},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.454462468624115},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4505144953727722},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4110575318336487},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36808907985687256},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2440965175628662},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23492908477783203},{"id":"https://openalex.org/C194789388","wikidata":"https://www.wikidata.org/wiki/Q17855283","display_name":"CAD","level":2,"score":0.09632191061973572},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09543213248252869},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.07558506727218628},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C199639397","wikidata":"https://www.wikidata.org/wiki/Q1788588","display_name":"Engineering drawing","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/1674-4926/30/1/014001","doi":"https://doi.org/10.1088/1674-4926/30/1/014001","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/30/1/014001","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},{"id":"mag:1512516460","doi":null,"is_oa":false,"landing_page_url":"http://www.cqvip.com/QK/94689X/200901/29407921.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306544928","display_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"\u534a\u5bfc\u4f53\u5b66\u62a5\uff1a\u82f1\u6587\u7248","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320273","display_name":"University of Cambridge","ror":"https://ror.org/013meh722"},{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1480606358","https://openalex.org/W1482892397","https://openalex.org/W1590842594","https://openalex.org/W1864318607","https://openalex.org/W1992666293","https://openalex.org/W2085206436","https://openalex.org/W2104877547","https://openalex.org/W2106998413","https://openalex.org/W2138387162","https://openalex.org/W2168189941","https://openalex.org/W2169300587","https://openalex.org/W2944291953"],"related_works":["https://openalex.org/W2314113208","https://openalex.org/W2051085040","https://openalex.org/W2944291953","https://openalex.org/W2020039566","https://openalex.org/W2356941767","https://openalex.org/W2510327979","https://openalex.org/W4296795721","https://openalex.org/W7128711785","https://openalex.org/W2896801715","https://openalex.org/W4361186110"],"abstract_inverted_index":{"We":[0],"report":[1],"the":[2,23,36,43,46,69,79],"analysis":[3],"and":[4,57],"TCAD":[5],"results":[6],"of":[7,22,33,42,68],"a":[8,95],"gate-all-around":[9],"cylindrical":[10,20],"(GAAC)":[11],"FinFET":[12,25,87],"with":[13],"operation":[14],"based":[15],"on":[16,63],"channel":[17,21,47],"accumulation.":[18],"The":[19,39,61,85],"GAAC":[24,86],"is":[26],"essentially":[27],"controlled":[28],"by":[29],"an":[30],"infinite":[31],"number":[32],"gates":[34],"surrounding":[35],"cylinder-shaped":[37],"channel.":[38],"symmetrical":[40],"nature":[41],"field":[44],"in":[45,89],"leads":[48],"to":[49,93,102],"improved":[50],"electrical":[51],"characteristics,":[52],"e.g.":[53],"reduced":[54],"leakage":[55],"current":[56],"negligible":[58],"corner":[59],"effects.":[60],"I":[62,65],"/":[64],"off":[66],"ratio":[67],"device":[70,83],"can":[71],"be":[72,94],"larger":[73],"than":[74],"10":[75],"6":[76],",":[77],"as":[78],"key":[80],"parameter":[81],"for":[82,99],"operation.":[84],"operating":[88],"accumulation":[90],"mode":[91],"appears":[92],"good":[96],"potential":[97],"candidate":[98],"scaling":[100],"down":[101],"sub-10":[103],"nm":[104],"sizes.":[105]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}