{"id":"https://openalex.org/W2078477261","doi":"https://doi.org/10.1016/j.apsusc.2010.03.001","title":"Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum","display_name":"Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum","publication_year":2010,"publication_date":"2010-03-11","ids":{"openalex":"https://openalex.org/W2078477261","doi":"https://doi.org/10.1016/j.apsusc.2010.03.001","mag":"2078477261"},"language":"en","primary_location":{"id":"doi:10.1016/j.apsusc.2010.03.001","doi":"https://doi.org/10.1016/j.apsusc.2010.03.001","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2010.03.001","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069703902","display_name":"Azusa N. Hattori","orcid":"https://orcid.org/0000-0002-5770-6026","observed_orcids":["https://orcid.org/0000-0002-5770-6026"]},"institutions":[{"id":"https://openalex.org/I4405286302","display_name":"Research Center for Precision Engineering","ror":"https://ror.org/01s0ph472","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405286302","https://openalex.org/I98285908"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Azusa N. Hattori","raw_affiliation_strings":["Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan","institution_ids":["https://openalex.org/I4405286302","https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112446105","display_name":"Katsuyoshi Endo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405286302","display_name":"Research Center for Precision Engineering","ror":"https://ror.org/01s0ph472","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405286302","https://openalex.org/I98285908"]},{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsuyoshi Endo","raw_affiliation_strings":["Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan","institution_ids":["https://openalex.org/I4405286302","https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Ken Hattori","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ken Hattori","raw_affiliation_strings":["Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan","institution_ids":["https://openalex.org/I75917431"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084775403","display_name":"Hiroshi Daimon","orcid":"https://orcid.org/0000-0002-6923-7829","observed_orcids":["https://orcid.org/0000-0002-6923-7829"]},"institutions":[{"id":"https://openalex.org/I75917431","display_name":"Nara Institute of Science and Technology","ror":"https://ror.org/05bhada84","country_code":"JP","type":"education","lineage":["https://openalex.org/I75917431"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Daimon","raw_affiliation_strings":["Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan","institution_ids":["https://openalex.org/I75917431"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5069703902"],"corresponding_institution_ids":["https://openalex.org/I4405286302","https://openalex.org/I98285908"],"apc_list":{"value":3930,"currency":"USD","value_usd":3930},"apc_paid":null,"fwci":1.4272,"has_fulltext":false,"cited_by_count":55,"citation_normalized_percentile":{"value":0.82846733,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"256","issue":"14","first_page":"4745","last_page":"4756"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.6660000085830688},{"id":"https://openalex.org/keywords/argon-ion-sputtering","display_name":"argon ion sputtering","score":0.8939999938011169},{"id":"https://openalex.org/keywords/hydrogen-impurities","display_name":"hydrogen impurities","score":0.5979999899864197},{"id":"https://openalex.org/keywords/surface-reconstruction","display_name":"surface reconstruction","score":0.8289999961853027},{"id":"https://openalex.org/keywords/surface-stoichiometry","display_name":"surface stoichiometry","score":0.8259999752044678},{"id":"https://openalex.org/keywords/surface-contamination","display_name":"surface contamination","score":0.5400000214576721},{"id":"https://openalex.org/keywords/crystalline-quality","display_name":"crystal quality","score":0.6100000143051147},{"id":"https://openalex.org/keywords/dislocations","display_name":"dislocations","score":0.8209999799728394}],"concepts":[{"id":"https://openalex.org/C25442681","wikidata":"https://www.wikidata.org/wiki/Q28087","display_name":"Auger electron spectroscopy","level":2,"score":0.6274927854537964},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.6260225772857666},{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.6054010987281799},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.588361918926239},{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.5845405459403992},{"id":"https://openalex.org/C100083437","wikidata":"https://www.wikidata.org/wiki/Q905977","display_name":"Low-energy electron diffraction","level":4,"score":0.49935054779052734},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.4960521161556244},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.48765861988067627},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4844086766242981},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4802949130535126},{"id":"https://openalex.org/C2777961443","wikidata":"https://www.wikidata.org/wiki/Q106520","display_name":"Hydride","level":3,"score":0.4731905460357666},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.4294660687446594},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3830515742301941},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.37255024909973145},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.33737343549728394},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.19743359088897705},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1709616780281067},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.16151544451713562},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.12340107560157776},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11106199026107788},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.07993161678314209},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06438708305358887},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.apsusc.2010.03.001","doi":"https://doi.org/10.1016/j.apsusc.2010.03.001","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.apsusc.2010.03.001","pdf_url":null,"source":{"id":"https://openalex.org/S42323631","display_name":"Applied Surface Science","issn_l":"0169-4332","issn":["0169-4332","1873-5584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Surface Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":88,"referenced_works":["https://openalex.org/W396058526","https://openalex.org/W621584929","https://openalex.org/W1494633084","https://openalex.org/W1526532500","https://openalex.org/W1530424089","https://openalex.org/W1557681670","https://openalex.org/W1600308401","https://openalex.org/W1648761941","https://openalex.org/W1965111243","https://openalex.org/W1969591560","https://openalex.org/W1969666475","https://openalex.org/W1972661332","https://openalex.org/W1972901534","https://openalex.org/W1973055149","https://openalex.org/W1974011962","https://openalex.org/W1977877090","https://openalex.org/W1980942245","https://openalex.org/W1984369799","https://openalex.org/W1990917790","https://openalex.org/W1994565387","https://openalex.org/W1996043014","https://openalex.org/W1997496452","https://openalex.org/W1998089125","https://openalex.org/W1999253380","https://openalex.org/W2000628961","https://openalex.org/W2001279936","https://openalex.org/W2001484920","https://openalex.org/W2002541771","https://openalex.org/W2003757926","https://openalex.org/W2004100436","https://openalex.org/W2005627880","https://openalex.org/W2007930532","https://openalex.org/W2012715192","https://openalex.org/W2012733634","https://openalex.org/W2013161247","https://openalex.org/W2020006977","https://openalex.org/W2021194116","https://openalex.org/W2021537655","https://openalex.org/W2023736084","https://openalex.org/W2023869742","https://openalex.org/W2025100642","https://openalex.org/W2027738098","https://openalex.org/W2034727819","https://openalex.org/W2036332115","https://openalex.org/W2037788879","https://openalex.org/W2038546939","https://openalex.org/W2040975343","https://openalex.org/W2044434581","https://openalex.org/W2048009977","https://openalex.org/W2049984299","https://openalex.org/W2050067719","https://openalex.org/W2054836768","https://openalex.org/W2056780179","https://openalex.org/W2058943846","https://openalex.org/W2059120276","https://openalex.org/W2059310165","https://openalex.org/W2060450625","https://openalex.org/W2061113348","https://openalex.org/W2061945442","https://openalex.org/W2062760513","https://openalex.org/W2063630123","https://openalex.org/W2063908804","https://openalex.org/W2065357291","https://openalex.org/W2065960607","https://openalex.org/W2068204832","https://openalex.org/W2068809977","https://openalex.org/W2070331063","https://openalex.org/W2071070799","https://openalex.org/W2079252130","https://openalex.org/W2080999445","https://openalex.org/W2084288037","https://openalex.org/W2085662156","https://openalex.org/W2087810824","https://openalex.org/W2087857005","https://openalex.org/W2089098362","https://openalex.org/W2090095617","https://openalex.org/W2091942867","https://openalex.org/W2095228274","https://openalex.org/W2098871590","https://openalex.org/W2099619554","https://openalex.org/W2113801096","https://openalex.org/W2119392370","https://openalex.org/W2123623223","https://openalex.org/W2125052023","https://openalex.org/W2139757680","https://openalex.org/W2149020058","https://openalex.org/W2378806114","https://openalex.org/W4214761756"],"related_works":["https://openalex.org/W1985089432","https://openalex.org/W2015566129","https://openalex.org/W2089175627","https://openalex.org/W2060120130","https://openalex.org/W1998970145","https://openalex.org/W2897433270","https://openalex.org/W2162278001","https://openalex.org/W4320489428","https://openalex.org/W2079513220","https://openalex.org/W2047974231"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":11},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}